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Modulating p-type doping of two-dimensional material palladium diselenide

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Nano Research 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo pang Shirong Huang Thomas Gemming Jinshun Bi Alicja Bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinan 250022China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu province Soochow UniversitySuzhou 215006China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Institute of Microelectronics of Tianjin Binhai New Area Tianjin 300451China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland School of Mathematics and physics University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China Centre of polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Center for Energy and Environmental Technologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor ***-10 noble metal dichalcogenides(e.g.,ptS_(2),ptSe_(2),pdS_(2),and pdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals *** them,pdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable ***,the regulation of p-type doping of pdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor ***,a quantitative method for the controllable doping of pdSe_(2) is yet to be *** this study,the doping level of pdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for *** the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking ***_(2) transistors were soaked in SnCl_(4) solutions with five different *** threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation *** study provides in-depth insights into the controllable p-type doping of pdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关键词： two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic

Development in p-type doping of ZnO

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Journal of Wuhan University of Technology(Materials Science) 2012年第6期27卷 1184-1187页

作者：俞丽萍朱其锵 FAN Dayong IANZili Department of physical Education School of Hubei University Department of Technology of Civil Engineering and Architecture Wuhan University of Technology Department of Technology of polymer Materials and Engineering Changchun University of TechnologyJilin 130012China Hubei University of Economics Sports Department Wuhan 430205China

Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.

关键词： ZnO p-type doping fabrication method optoelectronics applicatio

Investigation on p-type doping of pBn unipolar barrier InAsSb photodetectors

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红外与毫米波学报 2024年第4期43卷 472-478页

作者： ZHANG Jian CHANG Chao LI Hong-Fu SHI Yu-Na YIN Han-Xiang LI Yan-Hui YUE Biao WANG Hai-peng YAN Chang-Shan DAI Xin-Ran DENG Gong-Rong KONG Jin-Cheng ZHAO peng ZHAO Jun Kunming Institute of physics Kunming 650223China Beijing Engineering Research Center of Mixed Reality and Advanced Display School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China

The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole *** further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the pBn *** high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias *** the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.

关键词： InAsSb pBn p-type doping dark current

partial p-type Metal Ions doping Induced Variation of Both Crystal Structure and Oxygen Vacancy Within Cu/SnO_(2) Metastable Solid Solution Nanofibers for Highly Sensitive C_(2)H_(2) Sensor

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Chemical Research in Chinese Universities 2021年第3期37卷 584-588页

作者： WANG Ruifang YU Xi LI Zhenyu CHEN Jingyu JIANG Tingting State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation Southwest Petroleum UniversityChengdu610500P.R.China Center of Functional Materials for Working Fluids of Oil and Gas Field School of New Energy and MaterialsSouthwest Petroleum UniversityChengdu610500P.R.China School of Engineering Southwest Petroleum UniversityNanchong637001P.R.China School of Chemical Engineering Northeast Electric Power UniversityJilin132012P.R.China

partial p-type metal ions doping(ppMID)is an alternative method to further enhance the gas sensing performance of N-type metal oxides(NMOs)in contrast to that of p-N metal oxides heterojunctions,but the influences of the introduction of ppMID on the grain size and oxygen vacancies of NMOs have been rarely ***,a simple and effective route has been demonstrated to address this problem with Cu^(2+)-doped SnO_(2) metastable solid solution nanofibers(CSMSSNs)as model and C_(2)H_(2) as target molecule by combining electrospinning and calcination *** seems that the introduction of ppMID can also affect crystal structure and oxygen vacancies of NMOs,proven by combining X-ray diffraction(XRD)and X-ray photoelectron spectra(XpS).Thus,ppD,crystal structure and oxygen vacancies have been combined to clarify the enhanced sensing performance of Cu-doped SnO_(2) metastable solid solution nanofibers angainst C_(2)H_(2).

关键词： p-type doping p-N heterojunction Electrospinning Metastable solid solution nanofiber C_(2)H_(2)sensor

doping Effect of poly(vinylidene fluoride)on Carbon Nanofibers Deduced by Thermoelectric Analysis of Their Melt Mixed Films

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Chinese Journal of polymer Science 2024年第11期42卷 1802-1810,I0013页

作者： A.J.paleo V.M.Serrato J.M.Mánuel O.Toledano E.Muñoz M.Melle-Franco B.Krause p.põtschke K.Lozano 2C2T-Centre for Textile Science and Technology University of MinhoCampus de Azurém4800-058GuimarãesPortugal Florida Institute of Technology MelbourneFL32901USA The Aerospace Corporation El SegundoCA90245USA Department of Condensed Matter physics and Institute of Research on Electron Microscopy and Materials(IMEYMAT) Faculty of SciencesUniversity of CádizPuerto Real11510CádizSpain CICECO-Aveiro Institute of Materials Department of ChemistryUniversity of Aveiro3810-193AveiroPortugal UNED-Universidad Nacional de Educación a Distancia Av.de Espartas/nLas Rozas28232MadridSpain Facultad de Física Pontificia Universidad Católica de ChileSantiago7820436Chile Leibniz-Institut für polymerforschung Dresden e.V.(IpF) Hohe Str.601069DresdenGermany Department of Mechanical Engineering University of Texas Rio Grande ValleyEdinburgTX78539USA

The effect of temperature on the electrical conductivity(σ)and Seebeck coefficient(S)of n-type vapor grown carbon nanofibers(CNFs)and poly(vinylidene fluoride)(pVDF)melt-mixed with 15 wt%of those CNFs is *** 40°C,the CNFs show stable n-type character(S=-4.8μV·K^(-1))with anσof ca.165 S·m^(-1),while the pVDF/CNF composite film shows anσof ca.9 S·m^(-1)and near-zero S(S=-0.5μV·K^(-1)).This experimental reduction in S is studied by the density functional tight binding(DFTB)method revealing a contact electron transfer from the CNFs to the pVDF in the ***,in the temperature range from 40°C to 100°C,theσ(T)of the CNFs and pVDF/CNF film,successfully described by the 3D variable range hopping(VRH)model,is explained as consequence of a thermally activated backscattering *** the contrary,the S(T)from 40°C to 100°C of the pVDF/CNF film,which satisfactorily matches the model proposed for some multi-walled carbon nanotube(MWCNT)doped mats;however,it does not follow the increase in S(T)found for *** these findings are presented with the aim of discerning the role of these n-type vapor grown carbon nanofibers on theσand S of their melt-mixed polymer composites.

关键词： Carbon nanofibers poly(vinylidene fluoride) Seebeck coefficient p-type doping Density functional based tight binding Variable range hopping

Thermoelectric properties of the CuGaTe_2 Crystal from First-principles Calculations:the Role of doping and Temperature

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Chinese Journal of Structural Chemistry 2014年第10期33卷 1431-1435页

作者：赵小川孙宝珍何超马祖驹李巧红吴克琛 State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Graduate University of Chinese Academy of Sciences

The thermoelectric properties of CuGaTe2 crystal are investigated by using the first-principles method and semi-classical Boltzmann theory. We find that the electronic structure of CuGaTe2 is favorable for p-type doping. The transport coefficients can be tuned by doping and changing the work temperature to yield an optimized thermoelectric performance. The optimal doping concentration is 2 × 10^20 cm^-3, in which the maximum ZT value can reach 1.65 at 900 K. The results suggest CuGaTe2 might find promising applications as good thermoelectric materials, particularly at high temperature.

关键词： thermoelectric material p-type doping density functional theory

Tune the electronic structure of MoS_(2)homojunction for broadband photodetection

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Journal of Materials Science & Technology 2022年第24期119卷 61-68页

作者： Rui Tao Xianlin Qu Zegao Wang Fang Li Lei Yang Jiheng Li Dan Wang Kun Zheng Mingdong Dong College of Materials Science and Engineering Sichuan UniversityChengdu 610065China Beijing Key Lab of Microstructure and properties of Solids Faculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China State Key Laboratory for Advanced Metals&Materials University of Science&Technology BeijingBeijing 100083China State Key Laboratory of Organic-Inorganic Composites Beijing University of Chemical TechnologyBeijing 100029China Interdisciplinary Nanoscience Center Aarhus UniversityAarhus 8000Denmark

Due to the weak absorption and low light-matter interaction of MoS_(2),intrinsic MoS_(2)photodetector usually has low photoresponse,thus limiting its real ***,MoS_(2)homojunction was constructed by using the chemical vapor deposition grown intrinsic MoS_(2)films and the Nb-doped MoS_(2)*** results show that the Nb doping will induce p-type doping in MoS_(2),where the electron concentration will decrease by 2.08×10^(12)cm^(–2)after Nb *** investigating the photoelectric effect of MoS_(2)/Nb-doped MoS_(2)homojunction-based phototransistor,the tunability of the photoresponse,detectivity as the function of the external field,wavelength,and power of light have been studied in *** results show that the photoresponse and detectivity are strongly dependent on the gate voltage due to the external field tuned interlayer photoexcitation attributing to the band *** maximum of photoresponse can reach 51.4 A/W,the detectivity can reach 3.0×10^(12)Jones,which is two orders higher than that of intrinsic MoS_(2).Furthermore,by correlating the photoresponse and detectivity with the external field,it is found that the photodetection of MoS_(2)homojunction can be significantly tuned and exhibit well photodetection in *** comprehensive work not only sheds light on the tunable photoexcitation mechanism but also offers a strategy to achieve a high-performance photodetector.

关键词： Molybdenum disulfide p-type doping Homojunction photoresponse Tunability

Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition

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Journal of Semiconductors 2011年第5期32卷 22-27页

作者：李然黄辉任晓敏郭经纬刘小龙黄永清蔡世伟 Key Laboratory of Information photonics and Optical Communications Ministry of EducationBeijing University of Posts and Telecommunications Electronics Science and Technology Institute Dalian University of Technology

Vertical p-type gallium arsenide （GaAs） nanowires with pure zinc blende structure were grown on GaAs （111） B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc （DEZn）. In the high Ⅱ/Ⅲ ratio range （Ⅱ/Ⅲ〉9.1%）, there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray （EDX） analysis. Corresponding to Ⅱ/Ⅲ = 0.2%, the doping concentration is about 8 × 10^18 cm^-3.

关键词： GaAs nanowire p-type doping metal organic chemical vapor position zinc-blende structure

Lewis acid-doped transition metal dichalcogenides for ultraviolet–visible photodetectors

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Chinese physics B 2024年第9期33卷 628-635页

作者： Heng Yang Mingjun Ma Yongfeng pei Yufan Kang Jialu Yan Dong He Changzhong Jiang Wenqing Li Xiangheng Xiao School of physics and Technology Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of EducationWuhan UniversityWuhan 430072China Wuhan Research Center for Infectious Diseases and Cancer Chinese Academy of Medical SciencesWuhan 430072China

Ultraviolet photodetectors(UV pDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm *** present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response *** p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection *** 365 nm laser irradiation,WS_(2)pDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction pDs.

关键词： two-dimensional(2D)materials p-type doping transition metal dichalcogenides photodetectors