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Mathematical modeling of output power in RF-excited CO_2 waveguide lasers

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Journal of Harbin Institute of Technology(New Series) 2003年第1期10卷 60-63页

作者： Hussian Badran 田兆硕王骐 National Key Laboratory of Tunable Laser Technology Harbin Institute of Technology Harbin 150001 China

Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level and the rotational relaxation of rotational levels are described. The comparison between this model and a set of coupled rat equations model are discussed.

关键词： RF excited waveguide CO 2 laser output power relaxation time

Experimental Study of Buffer Gas Flow Rate Effect on output power of a Copper Vapor Laser

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Optics and Photonics Journal 2016年第2期6卷 24-28页

作者： Saeid Behrouzinia Kamran Khorasani Saeid Marjani Masoud Sabaghi Mohammad Ebrahim Aeinehvand Sadegh Mohammadpour Laser and Optics Research School Nuclear Science and Technology Research School Atomic Energy Organization of Iran Tehran Iran Department of Electrical Engineering Ferdowsi University of Mashhad Mashhad Iran Research and Sciences branch Islamic Azad University Tehran Iran

A copper vapor laser with active medium length of 60 cm and bore of 16 mm has been operated and optimized using different buffer gases to investigate the effect of the gas flow rates on the output power. It is found t... 详细信息

关键词： Copper Vapor Laser Gas Flow Rate output power

An X-band GaN combined solid-state power amplifier

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Journal of Semiconductors 2009年第9期30卷 57-61页

作者：陈炽郝跃冯辉杨林安马晓华段焕涛胡仕刚 Key Laboratory of Wide Band-Gap Semiconductor Materials and Device School of MicroelectronicsXidian University

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.

关键词： AlGaN/GaN HEMT solid-state power amplifiers output power gain compression power added efficiency

High power One- and Two-Order Cascaded Raman Lasers Based on Home-Made Phosphosilicate Fibre

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Chinese Physics Letters 2005年第5期22卷 1137-1139页

作者：冯鸣李乙钢李家方李静张小光吕可诚王宏杰 InstituteofPhysics NankaiUniversityTianjin300071

One- and two-order cascaded Raman fibre lasers are demonstrated by using home-made P-doped Raman fibres. An output power of 2.8 W at 1245nm with a slope efficiency of 33.4% and an output power of 2.0 W at 1495nm with ... 详细信息

关键词： Fiber Slope Efficiency output power Raman Raman lasers pump source

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

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Chinese Physics B 2013年第9期22卷 439-441页

作者：徐云王永宾张宇宋国峰陈良惠 Institute of Semiconductors Chinese Academy of Sciences

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

关键词： Galn(As)Sb/AlGaAsSb diode lasers threshold current density output power

High power triboelectric nanogenerator based on printed circuit board （PCB） technology

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Nano Research 2015年第3期8卷 722-730页

作者： Changbao Han Chi Zhang Wei Tang Xiaohui Li Zhong Lin Wang Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China School of Material Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA

Harvesting mechanical energy from our surroundings to acquire a steady and high power output has attracted intensive interest due to the fast development of portable electronics. In this work the disk-structured triboelectric nanogenerator （TENG） was prepared based on the mature printed drcuit board （PCB） technology and the composite structure for effectively improving the utilization in space. A narrow grating of 1~ was designed to produce high output. Operated at a rotation rate of 1,000 rpm, the TENG produces a high output power density of 267 mW/cm2 （total power output of 25.7 W） at a matched load of 0.93 MfZ After introducing a transformer, the output power can be managed so that it can be directly used to charge a battery for a smart phone. With the PCB production technology, fabrication of high performance TENG at low cost and large-scale becomes feasible.

关键词： triboelectric nanogenerator(TENG) printed circuit board (PCB) output power transformer

Simulation of the power Take-off System for a Heaving Buoy Wave Energy Converter

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Journal of Ocean University of China 2020年第3期19卷 497-504页

作者： CAO Feifei SHI Hongda LI Ming DONG Xiaochen LI Demin College of Engineering Ocean University of ChinaQingdao 266100China Shandong Provincial Key Laboratory of Ocean Engineering Qingdao 266100China Qingdao Municipal Key Laboratory of Ocean Renewable Energy Qingdao 266100China

The heaving buoy wave energy device is popular for wave conditions with small wave heights and short periods. This paper presents the design of a wave energy converter composed of a gyro buoy, a hydraulic power take-off, and an electricity generation system. The energy accumulators are used to improve the output power with different control strategies. The quantity relations between each component are established using theoretical methods. The simulation model describes the energy conversion and calculates the operation time, energy capacity, and output power of the device under different initial pressures, release pressures, and electric resistances. As a result, the capacity is determined by the electronic load, and the maximum output power can be obtained when the accumulators are turned on and off at the same time. This study investigates the factors influencing the electric energy production and can be used to guide the optimization of this type of device.

关键词： wave energy heaving buoy power-take-off accumulator output power

A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors

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Journal of Semiconductors 2013年第3期34卷 43-47页

作者：王帅李科姜一波丛密芳杜寰韩郑生 Institute of Microelectronics Chinese Academy of Sciences

The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead *** improved thru-reflect-line(TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is *** to the TRL algorithm,the individual two-port S parameters of each fixture half can be *** de-embedding these S parameters of the test fixture,an accurate calibration can be *** improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate *** impedance of the transistor is obtained,and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power *** the results,it is seen that the presented TRL calibration algorithm works well.

关键词： thru-reflect-line lateral double-diffused MOSFET low impedance test fixture impedance output power

A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

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Journal of Semiconductors 2012年第1期33卷 52-55页

作者： Ge Qin Chen xiaojuan Luo Weijun Yuan Tingting Pu Yan Liu Xinyu Key Laboratory of Microwave Devices&Integrated Circuits Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic （3D-EM） simulator, the amplifier demonstrates a maximum output power of 42.5 dBm （17.8 W）, PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vas = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.

关键词： Ku-band A1GaN/GaN HEMTs IMPA output power PAE