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Tactile and temperature sensors based on organic transistors:Towards e-skin fabrication

Frontiers of physics 2021年第1期16卷 43-55页

作者： Miao Zhu Muhammad Umair Ali Changwei Zou Wei Xie Songquan Li Hong Meng School of Physical Science and Technology Lingnan Normal UniversityZhanjiang 524048China Department of Materials Science and Engineering College of EngineeringPeking UniversityBeijing 100871China School of Advanced Materials Peking University Shenzhen Graduate SchoolPeking UniversityShenzhen 518055China

Tactile and temperature sensors are the key components for e-skin *** transistors,a kind of intrinsic logic devices with diverse internal configurations,offer a wide range of options for sensor design and have played a vital role in the fabrication of e-skin-oriented tactile and temperature *** research field has attained tremendous advancements,both in terms of materials design and device architecture,thereby leading to excellent performance of resulting tactile/temperature ***,a systematic review of organic transistor-based tactile and temperature sensors is presented to summarize the latest progress in these ***,we focus on spotlighting various device structures,underlying mechanisms and their ***,an outlook for the future development of these devices is briefly *** anticipate that this review will provide a quick overview of such a rapidly emerging research direction and attract more dedicated efforts for the development of next-generation sensing devices towards e-skin fabrication.

关键词： tactile sensor temperature sensor flexible e-skin organic transistor

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Influence of Temperature and Pentacene Thickness on the Electrical Parameters in Top Gate organic Thin Film transistor

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Advances in Materials Physics and Chemistry 2017年第3期7卷 85-98页

作者： Abdoul Kadri Diallo El Hadji Babacar Ly Diene Ndiaye Diouma Kobor Marcel Pasquinelli Abdou Karim Diallo Laboratoire de Chimie et de Physique des Materiaux(LCPM) Universite Assane Seck de ZiguinchorZiguinchorSenegal Departement de physique appliquee Universite de Gaston BergerSaint LouisSenegal Aix Marseille Universite Domaine Universitaire de Saint JeromeMarseilleFrance

In this contribution, we report on the effect of pentacene thickness and temperature on the performance of top gate transistors. We first investigated the temperature dependence of the transport properties in the temperature range of 258 K - 353 K. The electrical characteristics showed that the threshold voltage (VT) and the onset voltage (Von) remain unchanged. However, the subthreshold current (Ioff), the on-current (Ion) and the field effect mobility (μ) are highly affected with a slight deterioration of subthreshold slope. We observed Arrhenius-like behavior suggesting a thermally activated mobility with an activation energy EA = 68 meV. Moreover the dependence of the charge carrier mobility on the organic semiconductor thickness has also been studied. The mobility decreased as the pentacene thickness increases whereas the threshold voltage and Ioff current remain minimally affected. In order to understand the transport properties and in view to put in light morphology peculiarities of pentacene, AFM images were performed. It turns out that the pentacene grain sizes are smaller and disorganized as the film thickness increases, and charge carriers are more prone to be trapped, leading to decrease the field effect mobility and the Ion current. The devices were also tested under bias stress and the transistors with low thicknesses exhibited a relatively good electrical stability compared to those with high pentacene thicknesses. This work points out the influence of temperature, semiconductor thickness and bias stress effect on the device performance and stability of transistor using top gate configuration.

关键词： Pentacene organic transistor Top Gate Thin Film transistor Bias Stress Parylene

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Tuning the aggregation structure and electrical property of 2.6-diphenyl-anthracene by the density of octadecyltrichlorosilane

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Science China Chemistry 2016年第12期59卷 1645-1650页

作者： Xi Zhang Xiaosong Chen Jie Liu Yonggang Zhen Huanli Dong Liqiang Li Wenping Hu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of ChemistryChinese Academy of Sciences Advanced Nano-Materials Division Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences

The physical and chemical properties of organic semiconductors are closely related to their aggregation structure. Tuning of aggregation structure and electrical property is important for the application in organic electronics. In this study, a facile way to tune the aggregation structure and electrical property of 2.6-diphenyl-anthracene(DPA) is realized by using the octadecyltrichlorosilane(OTS) modification layer with different density which is fabricated by controlling reaction temperature and *** with low density OTS, DPA forms larger grain size, less grain boundaries, and better molecular ordering on high density OTS surface. As a result, the charge transporting mobility of DPA film on high density OTS surface is about two orders of magnitude higher than that on low density OTS surface. The tunable aggregation structure and electrical property of DPA demonstrated here would be meaningful for the application of DPA in organic electronics.

关键词： organic transistor DPA OTS density aggregation structure

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New Core-Expanded Naphthalene Diimides for n-Channel organic Thin Film transistors

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Chinese Journal of Chemistry 2013年第11期31卷 1428-1438页

作者： Yunbin Hu Xu Zhang Xiaodi Yang Hongxiang Li Xike Gao Laboratory of Materials Science Shanghai Institute of Organic Chemistry Chinese Academy of Sciences Shanghai 200032 China Laboratory of Advanced Materials Fudan University Shanghai 200433 China

Four classes of core-expanded naphthalene diimides （la, lb, 2a, 2b, 3 and 4） that bear different elec- tron-deficient sulfur heterocycles were designed and synthesized. The solution-processed thin films of la, 2a, 3 and 4 operated well in air as n-channel organic transistors with electron mobility ranging from MO 6 to 0.14 cm2/Vs, depending on the different conjugated backbones. The thin film microstructure studies were also carried out to un- derstand the variations of the electron mobility for thin films of la, 2a, 3 and 4.

关键词： naphthalene diimide sulfur heterocycle n-type organic semiconductor organic transistor

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Fine-tuning the molecular energy levels by incorporating thiophene units onto the π-backbone of core-expanded naphthalene diimides

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Chinese Chemical Letters 2016年第7期27卷 1022-1026页

作者： Dong Lu Xiao-Chun Yang Bing Leng Xiao-Di Yang Cong-Wu Ge Xue-Shun Jia Xi-Ke Gao Department of Chemistry College of Science Shanghai University Key Laboratory of Synthetic and Self-Assembly Chemistry for organic Functional Molecules Shanghai Institute of Organic Chemistry Chinese Academy of Sciences Laboratory of Advanced Materials Fudan University

A series of core-expanded naphthalene diimides（NDI-DTYM） and thiophene-based derivatives（1a-c）were designed and synthesized to investigate the relationship between molecular structures and the highest occupied molecular orbital（HOMO） energy levels but has little impact on the lowest unoccupied molecular orbital（LUMO） energy *** results demonstrated that increasing the number of thiophene units can gradually elevate the HOMO energy levels but had little impact on the LUMO energy *** n-channel organic field-effect transistors（OFETs） based on 1b and 1c have demonstrated that these almost unchanged LUMO energy levels are proper to transport electrons.

关键词： Naphthalene diimide Thiophene Molecular energy level organic transistor organic semiconductor

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Electrical Instability in Pentacene transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

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Journal of Applied Mathematics and Physics 2016年第7期4卷 1202-1209页

作者： Abdou Karim Diallo Abdoul Kadri Diallo Diouma Kobor Marcel Pasquinelli Departement de Physique Appliquée Université de Gaston Berger Saint Louis Sénégal Laboratoire de Chimie et de Physique des Matériaux (LCPM) Université Assane Seck de Ziguinchor Ziguinchor Sénégal Aix Marseille Université Domaine Universitaire de Saint Jér&ocircme Marseille France

This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (VT), subthreshold slope (S), mobility (μ), onset voltage (Von) and Ion/Ioff ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, Ioff current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.

关键词： organic transistor Mylar Lamination Pentacene Bias Stress

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