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Enhancement of morphological and emission stability of deep-blue small molecular emitter via a universal side-chain coupling strategy for optoelectronic device

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Chinese Chemical Letters 2022年第2期33卷 835-841页

作者： Ning Sun Han Gao Lili Sun Jingxi An Man Xu Chen Sun Yamin Han Jinyi Lin Jiangli Cai Mingjian Ni Liangliang He Jinghao Yang Zhoulu Wang Lubing Bai Xinwen Zhang Qi Wei Xuehua Ding Chengrong Yin Linghai Xie Wei Huang Key Laboratory of Flexible Electronics(KLOFE)and Institute of Advanced Materials(IAM) Nanjing Tech University(NanjingTech)Nanjing 210000China State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials(IAM) Nanjing University of Posts and TelecommunicationsNanjing 210023China Frontiers Science Center for Flexible Electronics(FSCFE) MIIT Key Laboratory of Flexible Electronics(KLoFE)Northwestern Polytechnical UniversityXi’an 710072China

Film morphology of emissive layers is crucial to the performance and stability of solution-processable organic light-emitting diodes(OLEDs). Compared to the interpenetration of conjugated polymer chain,small molecular emitter with a flexible side chain always presents easily aggregation upon external treatment, and caused π-electronic coupling, which is undesirable for the efficiency and stability of deep-blue OLEDs. Herein, we proposed a side-chain coupling strategy to enhance the film morphological an emission stability of solution-processable small molecular deep-blue emitter. In contrary to “parent” MC8 TPA,the crosslinkable styryl and vinyl units were introduced as ended unit at the side-chain of Cm TPA and OEYTPA. Interestingly, Cm TPA and OEYTPA films present a relatively stable morphology and uniform deep-blue emission after thermal annealing(160 ℃) in the atmosphere, different to the discontinuous MC8 TPA annealed film. Besides, compared to the Cm TPA and OEYTPA ones, serious polaron formation in the MC8 TPA annealed film also negative to the deep-blue emission, according to transient absorption analysis. Therefore, both Cm TPA and OEYTPA annealed film obtained at 140 ℃ present an excellent deep-blue ASE behavior with a 445 nm, but absence for MC8 TPA ones, associated with the disruption of annealed films. Finally, enhancement of device performance based on Cm TPA and OEYTPA film(~40%)after thermal annealing with a similar performance curves also confirmed the assumption above. Therefore, these results also supported the effectiveness of our side-chain coupling strategy for optoelectronic applications.

关键词： Side-chain coupling Small molecular emitter Morphological stability Deep-blue emission optoelectronic device

Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

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Journal of Materiomics 2021年第3期7卷 470-477页

作者： Yu Zeng Zhan Shen Xu Wu Dong-Xiao Wang Ye-Liang Wang Ya-Li Sun Li Wu Yi Zhang Tianjin Key Laboratory of Photoelectronic Thin Film devices and Technology And Renewable Energy Conversion and Storage CenterNankai UniversityNankai UniversityTianjin300350China School of Information and Electronics Beijing Institute of TechnologyBeijing100081China Key Laboratory of Weak-Light Nonlinear Photonics Ministry of EducationSchool of PhysicsNankai UniversityTianjin300071China

VSe2 is with high electrical conductivity and high work function,thus it is beneficial for the carrier transport in the optoelectronic devices.However,the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood.In this work,we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4(CZTSSe)film.We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%.Besides improving the carrier transport in the back contact region,the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer.The present work not only provides an effective method to improve the performance of the optoelectronic device,but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation.

关键词： Transition metal dichalcogenides optoelectronic device VSe2 CZTSSe solar cell Back interface

Plasmonically engineered light-matter interactions in Aunanoparticle/MoS_(2) heterostructures for artificial optoelectronic synapse

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Nano Research 2022年第4期15卷 3539-3547页

作者： Zhuoran Luo Yunfei Xie Ziwei Li Yajuan Wang Lihui Li Ziyu Luo Chenguang Zhu Xin Yang Ming Huang Jianhua Huang Delang Liang Xiaoli Zhu Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China State Key Laboratory of Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100084China

optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore era.However,optoelectronic devices based on transition metal dichalcogenides(TMDs)are limited to their poor mobilities and weak light-matter interactions,which still hardly exhibit superior device performances in the application of artificial synapses.Here,we demonstrate the successful fabrication of Au nanoparticle-coupled MoS_(2)heterostructures via chemical vapor deposition(CVD),where the light absorption of MoS_(2)is greatly enhanced and engineered by plasmonic effects.Hot electrons are excited from Au nanoparticles,and then injected into MoS_(2)semiconductors under the light illumination.The plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors,especially in ultra-sensitive excitatory postsynaptic current(EPSC,9.6×10^(-3)nA@3.4 nW·cm^(-2)),ultralow energy consumption(34.7 pJ),long-state retention time(>1,000 s),and tunable synaptic plasticity transitions.The material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses,which may lead the future development of neuromorphic electronics in optical information sensing and learning.

关键词： synapse optoelectronic device surface plasmon photo-gating MoS_(2)

Single-molecule optoelectronic devices:physical mechanism and beyond

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Opto-Electronic Advances 2022年第5期5卷 1-21页

作者： Peihui Li Yijian Chen Boyu Wang Mengmeng Li Dong Xiang Chuancheng Jia Xuefeng Guo Center of Single-Molecule Sciences Institute of Modern OpticsTianjin Key Laboratory of Micro-scale Optical Information Science and TechnologyFrontiers Science Center for New Organic MatterCollege of Electronic Information and Optical EngineeringNankai UniversityTianjin 300350China Beijing National Laboratory for Molecular Sciences State Key Laboratory for Structural Chemistry of Unstable and Stable SpeciesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China

Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable platform for exploration of the intrinsic properties of matters at the single-molecule level.Because the regulation of the electrical properties of single-molecule devices will be a key factor in enabling further advances in the development of molecular electronics,it is necessary to clarify the interactions between the charge transport occurring in the device and the external fields,particularly the optical field.This review mainly introduces the optoelectronic effects that are involved in single-molecule devices,including photoisomerization switching,photoconductance,plasmon-induced excitation,photovoltaic effect,and electroluminescence.We also summarize the optoelectronic mechanisms of single-molecule devices,with particular emphasis on the photoisomerization,photoexcitation,and photo-assisted tunneling processes.Finally,we focus the discussion on the opportunities and challenges arising in the single-molecule optoelectronics field and propose further possible breakthroughs.

关键词： optoelectronic device single-molecule junction light-matter interaction switch electroluminescence plasmon

Universal 4-qualifiable fluorene-based building blocks for potential optoelectronic applications

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Chinese Chemical Letters 2022年第12期33卷 5137-5141页

作者： Xiang An Jinghao Yang Man Xu Lili Sun Lubing Bai Kai Wang Zhiqiang Zhuo Yingying Zheng Jinyi Lin Xuehua Ding Yuyu Liu Linghai Xie Chengrong Yin Wei Huang Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) Nanjing Tech University(NanjingTech)Nanjing 211816China State Key Laboratory of Organic Electronics and Information Displays&Institute of Advanced Materials(IAM) Nanjing University of Posts&TelecommunicationsNanjing 210023China Frontiers Science Center for Flexible Electronics(FSCFE) MIIT Key Laboratory of Flexible Electronics(KLoFE)Northwestern Polytechnical UniversityXi'an 710072China Electrical Engineering College Nanjing Vocational University of Industry TechnologyNanjing 210023China

In the design of conjugated molecules,modular production enables materials to easily realize structure modification and precisely tune their photoelectrical property.Construction of a novel and universal building block is crucial to design and manufacture high performance and stable conjugated molecules for optoelectronic application.Herein,we originally demonstrated a universal 4-qualifiable fluorene-based building block,which is a fundamental molecular segment to functionalize and obtain novel conjugated materials.Compared to the traditional modification at 9-site,additional 4-position functionalization provided an exciting blueprint to not only tune electronic structure and excited state via p-n molecular design engineering and space charge-transfer strategy,but also allow for optimizing intermolecular arrangement and obtaining solution-processing ability.The introduction of the 4-site substituent in fluorene based semiconductors may endow materials with unique properties.Finally,we successfully prepared two stable deep-blue light-emitting conjugated polymer,PODOPF and PODOF,by utilizing the 4-substituent fluorene based building block.It is believable that the performance,stability and processibility of reported outstanding fluorene-based conjugated molecules can be further optimized based on this universal building block.

关键词： Side-chain coupling Small molecular emitter Morphological stability Deep-blue emission optoelectronic device

CuPc/C_(60) heterojunction thin film optoelectronic devices

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Journal of Semiconductors 2010年第6期31卷 47-49页

作者： Imran Murtaza Ibrahim Qazi Khasan S.Karimov GIK Institute of Engineering Sciences and Technology Physical Technical Institute of Academy of Sciences Rudaki Ave.33 Dushanbe Pakistan Physical Technical Institute of Academy of Sciences Rudaki Ave.33Dushanbe

The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C_（60）/Al structure have been investigated by analyzing their current-voltage characteristics,optical absorption and photocurrent.In this organic photovoltaic device,CuPc acts as an optically active layer,C_（60） as an electron-transporting layer and ITO and Al as electrodes.It is observed that,under illumination,excitons are formed,which subsequently drift towards the interface with C_（60）,where an internal electric field is present.The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface.The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface,the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.

关键词： organic semiconductor optoelectronic device thin film heterojunction CuPc C_（60）

Fabrication of high-quality silver nanowire conductive film and its application for transparent film heaters

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Journal of Materials Science & Technology 2021年第12期71卷 221-227页

作者： Boda Zheng Qingsheng Zhu Yang Zhao Institute of Metal Research Chinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China

Here,we report a facile method to produce pure silver nanowires(Ag NWs)with high yield.A highly conductive dispersant was used to ensure uniform dispersion of the Ag NWs.Without any posttreatment,the Ag NW networks,deposited on flexible substrates,showed excellent optoelectrical performance owing to minimal junction resistance between the Ag NWs.To explore their potential in flexible optoelectronic devices,a transparent film heater was constructed based on the present Ag NW networks.The heater could achieve rapid response at low input voltage and reach a relatively high temperature in a short response time.Since this high-quality Ag NW film exhibits relatively low production costs and fast production time,it may have value for future electronic industry applications.

关键词： Silver nanowire Optoelectrical performance Conductive film Transparent film heater optoelectronic device

Graphene applications in electronic and optoelectronic devices and circuits

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Chinese Physics B 2013年第9期22卷 101-110页

作者：吴华强令狐昌洋吕宏鸣钱鹤 Institute of Microelectronics Tsinghua University Tsinghua National Laboratory for Information Science and Technology (TNList)

Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.

关键词： graphene electronic device optoelectronic device circuit

A field-effect WSe_(2)/Si heterojunction diode

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Chinese Physics B 2023年第1期32卷 592-597页

作者：余睿盛喆胡文楠王越董建国孙浩然程增光张增星 State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China

It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.

关键词： two-dimensional material ambipolar semiconductor field-effect transistor optoelectronic device