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Band structure engineering in metal halide perovskite nanostructures for optoelectronic applications

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Nano Materials Science 2019年第4期1卷 268-287页

作者： Qingdong Ou Xiaozhi Bao Yinan Zhang Huaiyu Shao Guichuan Xing Xiangping Li Liyang Shao Qiaoliang Bao Department of Materials Science and Engineering ARC Centre of Excellence in Future Low-Energy Electronics Technologies(FLEET)Monash UniversityClaytonVictoria3800Australia Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering(IAPME)University of MacaoMacaoPeople's Republic of China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Institute of Photonics TechnologyJinan UniversityGuangzhou510632People's Republic of China Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen518055GuangdongPeople's Republic of China

Metal halide perovskite nanostructures have emerged as low-dimensional semiconductors of great significance in many fields such as photovoltaics,photonics,and *** efforts on the controlled synthesis of perovskite nanostructures have been made towards potential device *** engineering of their band structures holds great promise in the rational tuning of the electronic and optical properties of perovskite nanostructures,which is one of the keys to achieving efficient and multifunctional optoelectronic *** this article,we summarize recent advances in band structure engineering of perovskite nanostructures.A survey of bandgap engineering of nanostructured perovskites is firstly presented from the aspects of dimensionality tailoring,compositional substitution,phase segregation and transition,as well as strain and pressure *** strategies of electronic doping are then reviewed,including defect-induced self-doping,inorganic or organic molecules-based chemical doping,and modification by metal ions or *** on the bandgap engineering and electronic doping,discussions on engineering energy band alignments in perovskite nanostructures are provided for building high-performance perovskite p-n junctions and *** last,we provide our perspectives in engineering band structures of perovskite nanostructures towards future low-energy optoelectronics technologies.

关键词： Band structure engineering Perovskite nanostructures optoelectronic applications Doping Heterostructures

Perovskite single crystals:physical properties and optoelectronic applications

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Materials Futures 2023年第4期2卷 1-32页

作者： Chen Li Haoxuan Sun Shan Gan Da Dou Liang Li School of Physical Science and Technology Jiangsu Key Laboratory of Thin FilmsCenter for Energy Conversion Materials&Physics(CECMP)Soochow UniversitySuzhou 215006People’s Republic of China

Single crystal is the most advantageous of the crystalline states of halide *** displays better optical and electrical capabilities than polycrystalline films and microcrystals due to their inherent structural advantages,such as free grain boundaries,long-range ordered structure,and high ***-crystal perovskite materials can theoretically enable optoelectronic devices with higher performance and stronger *** this review,the intrinsic physical properties of perovskite single crystals are *** most recent advances in single-crystal optoelectronic devices are reviewed,and the design principles of the devices under different application conditions are *** provides potential solutions for remaining challenges,and it is expected to accelerate the development of perovskite based optoelectronic devices.

关键词： perovskite single crystals physicalproperties optoelectronic applications

Manufacturing of graphene based synaptic devices for optoelectronic applications

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International Journal of Extreme Manufacturing 2023年第4期5卷 150-177页

作者： Kui Zhou Ziqi Jia Xin-Qi Ma Wenbiao Niu Yao Zhou Ning Huang Guanglong Ding Yan Yan Su-Ting Han Vellaisamy A L Roy Ye Zhou Institute for Advanced Study Shenzhen UniversityShenzhen 518060People’s Republic of China College of Materials Science and Engineering Shenzhen UniversityShenzhen 518060People’s Republic of China College of Electronics and Information Engineering Shenzhen UniversityShenzhen 518060People’s Republic of China School of Science and Technology Hong Kong Metropolitan UniversityHong Kong Special Administrative Region of ChinaPeople’s Republic of China James Watt School of Engineering University of GlasgowGlasgow G128QQUnited Kingdom

Neuromorphic computing systems can perform memory and computing tasks in parallel on artificial synaptic devices through simulating synaptic functions,which is promising for breaking the conventional von Neumann bottlenecks at hardware *** optoelectronic synapses enable the synergistic coupling between optical and electrical signals in synaptic modulation,which opens up an innovative path for effective neuromorphic *** the advantages of high mobility,optical transparency,ultrawideband tunability,and environmental stability,graphene has attracted tremendous interest for electronic and optoelectronic *** progress highlights the significance of implementing graphene into artificial synaptic ***,to better understand the potential of graphene-based synaptic devices,the fabrication technologies of graphene are first ***,the roles of graphene in various synaptic devices are ***,their typical optoelectronic applications in neuromorphic systems are ***,outlooks for development of synaptic devices based on graphene are *** review will provide a comprehensive understanding of graphene fabrication technologies and graphene-based synaptic device for optoelectronic applications,also present an outlook for development of graphene-based synaptic device in future neuromorphic systems.

关键词： graphene synaptic device memristor optoelectronic applications

Optical studies of semiconductor perovskite nanocrystals for classical optoelectronic applications and quantum information technologies: a review

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Advanced Photonics 2020年第5期2卷 11-25页

作者： Zengle Cao Fengrui Hu Chunfeng Zhang Shining Zhu Min Xiao Xiaoyong Wang Nanjing University College of Engineering and Applied SciencesSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNational Laboratory of Solid State MicrostructuresNanjingChina University of Arkansas Department of PhysicsFayettevilleArkansasUnited States

Semiconductor perovskite films are now being widely investigated as light harvesters in solar cells with ever-increasing power conversion efficiencies,which have motivated the fabrication of other optoelectronic devices,such as light-emitting diodes,lasers,and *** superior material and optical properties are shared by the counterpart colloidal nanocrystals(NCs),with the additional advantage of quantum confinement that can yield size-dependent optical emission ranging from the near-UV to near-infrared *** far,intensive research efforts have been devoted to the optical characterization of perovskite NC ensembles,revealing not only fundamental exciton relaxation and recombination dynamics but also lowthreshold amplified spontaneous emission and novel superfluorescence ***,the application of single-particle spectroscopy techniques to perovskite NCs has helped to resolve a variety of optical properties for which there are few equivalents in traditional colloidal NCs,mainly including nonblinking photoluminescence,suppressed spectral diffusion,stable exciton fine structures,and coherent singlephoton *** the main purpose of ensemble optical studies is to guide the smooth development of perovskite NCs in classical optoelectronic applications,the rich observations from single-particle optical studies mark the emergence of a potential platform that can be exploited for quantum information technologies.

关键词： perovskite nanocrystals optical studies single-particle spectroscopy transient absorption optoelectronic applications quantum information technologies

New materials based on carbazole for optoelectronic device applications:Theoretical investigation

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Chinese Chemical Letters 2008年第4期19卷 488-492页

作者： K.Hasnaoui H.Zgou M.Hamidi M.Bouachrine Unité de Recherche sur les Macromolécules et Modélisation Faculté des Sciences et TechniquesB.P.509 Boutalamine5200 ErrachidiaMorocco Unité de Chimie Théorique AppiquéeFaculté des Sciences et TechniquesB.P.509 Boutalamine5200 ErrachidiaMorocco Unité de Chimie Théorique Appliquée Faculté des Sciences et TechniquesB.P.509 Boutalamine5200 ErrachidiaMorocco Unité de Recherche sur les Macromolécules et Modélisation Faculté des Sciences et TechniquesB.P.509 Boutalamine5200 ErrachidiaMorocco

A quantum-chemical investigation on the structural and optoelectronic properties of two materials based on carbazole is carried *** purpose is to display the effect of grafting the fluorine atoms on their optoelectronic and physico-chemical *** addition to solubility in the polar solvents and the modification in geometric parameters,the substitution of fluorine destabilizes the HOMO and LUMO levels,decreases the band gap energy and raises conjugation *** properties suggest the substituted fluorine compound as a good candidate for optoelectronic applications.

关键词： Conjugated polymers DFT theoretical investigation Carbazole optoelectronic applications

Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

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Journal of Semiconductors 2016年第5期37卷 1-9页

作者：夏从新李京波 Department of Physics Henan Normal University Xinxiang 453007 China Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Since two-dimensional （2D） graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalco- genides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some per- sonal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

关键词： 2D metal chalcogenides semiconductor optoelectronic applications

Near-infrared emitting metal halide materials:Luminescence design and applications

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InfoMat 2024年第5期6卷 1-46页

作者： Dongjie Liu Peipei Dang Guodong Zhang Hongzhou Lian Guogang Li Jun Lin State Key Laboratory of Rare Earth Resource Utilization Changchun Institute of Applied ChemistryChinese Academy of SciencesChangchunthe People's Republic of China University of Science and Technology of China Hefeithe People's Republic of China Faculty of Materials Science and Chemistry China University of GeosciencesWuhanthe People's Republic of China Zhejiang Institute China University of GeosciencesHangzhouthe People's Republic of China

Near-infrared(NIR)luminescent metal halide(LMH)materials have attracted great attention in various optoelectronic applications due to their low-temperature solution-processable synthesis,abundant crystallographic/electronic structures,and unique optoelectronic ***,some challenges still remain in their luminescence design,performance improvement,and application *** review systematically summarizes the development of NIR LMHs through classifying NIR luminescent origins into four major categories:band-edge emission,self-trapped exciton(STE)emission,ion emission,and defect-related *** luminescence mechanisms of different types of NIR LMHs are discussed in detail by analyzing typical *** strategies for design-ing and optimizing luminescence/optoelectronic properties of NIR LMHs are summarized,including bandgap engineering,self-trapping state engineering,chemical composition modification,energy transfer,and other auxiliary strategies such as improvement of synthesis scheme and ***,application prospects based on the optoelectronic devices are revealed,including phosphor-converted light-emitting diodes(LEDs),electroluminescent LEDs,pho-todetectors,solar cells,and x-ray scintillators,as well as demonstrations of some related practical ***,the existing challenges and future perspec-tives on the development of NIR LMH materials are critically *** review aims to provide general understanding and guidance for the design of high-performance NIR LMHs materials.

关键词： luminescence design metal halides near-infrared luminescent materials optoelectronic applications performance improvement

High-throughput computational material screening of the cycloalkane-based two-dimensional Dion–Jacobson halide perovskites for optoelectronics

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Chinese Physics B 2022年第3期31卷 52-59页

作者： Guoqi Zhao Jiahao Xie Kun Zhou Bangyu Xing Xinjiang Wang Fuyu Tian Xin He Lijun Zhang State Key Laboratory of Integrated optoelectronics Key Laboratory of Automobile Materials of MOECollege of Materials Science and EngineeringJilin UniversityChangchun 130012China

Two-dimensional(2D) layered perovskites have emerged as potential alternates to traditional three-dimensional(3D)analogs to solve the stability issue of perovskite solar cells. In recent years, many efforts have been spent on manipulating the interlayer organic spacing cation to improve the photovoltaic properties of Dion–Jacobson(DJ) perovskites. In this work, a serious of cycloalkane(CA) molecules were selected as the organic spacing cation in 2D DJ perovskites, which can widely manipulate the optoelectronic properties of the DJ perovskites. The underlying relationship between the CA interlayer molecules and the crystal structures, thermodynamic stabilities, and electronic properties of 58 DJ perovskites has been investigated by using automatic high-throughput workflow cooperated with density-functional(DFT) *** found that these CA-based DJ perovskites are all thermodynamic stable. The sizes of the cycloalkane molecules can influence the degree of inorganic framework distortion and further tune the bandgaps with a wide range of 0.9–2.1 *** findings indicate the cycloalkane molecules are suitable as spacing cation in 2D DJ perovskites and provide a useful guidance in designing novel 2D DJ perovskites for optoelectronic applications.

关键词： first-principle calculations two-dimensional halide perovskites electronic structures Dion–Jacobson phaseperovskites optoelectronic applications

Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

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Science China(Technological Sciences) 2024年第8期67卷 2449-2460页

作者： SHU LinCong SHA ShuLin XI ZhaoYing LI Lei YAO SuHao ZHANG JiaHan JI XueQiang ZHANG ShaoHui BIAN Ang JIANG MingMing GUO YuFeng TANG WeiHua LIU Zeng Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Science MIIT Key Laboratory of Aerospace Information Materials and PhysicsNanjing University of Aeronautics and AstronauticsNanjing 211106China Collaborative Innovation Center of Advanced Microstructures School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Institute of Biological and Medical Engineering Guangdong Academy of SciencesGuangzhou 510316China School of Science Jiangsu University of Science and TechnologyZhenjiang 212100China School of Integrated Circuits Beijing University of Posts and TelecommunicationsBeijing 100876China

In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various *** study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)***,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing *** performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot *** process is facilitated by non-radiative decay processes induced by ***,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of *** addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the ***,the application of this array extends to photon detection in the deep-UV(DUV)*** includes critical areas such as imaging sensing and water quality *** leveraging surface plasmon coupling,the array achieves high-performance DUV photon *** approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.

关键词： InGaO PECVD surface plasmon solar-blind UV photodetector array optoelectronic applications