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Numerical Study of Temperature and Electric Field Effects on the Total optical Absorption Coefficient in the Presence of optical Inter-Conduction-Subband transitions in InGaN/GaN Single Parabolic Quantum Wells

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Fluid Dynamics & Materials Processing 2022年第5期18卷 1253-1261页

作者： Redouane En-nadir Haddou El-ghazi Anouar Jorio Izeddine Zorkani Hassan Abboudi Fath Allah Jabouti LPS Sidi Mohamed Ben Abdullah UniversityFez30000Morocco ENSAM Hassan-II UniversityCasablanca20470Morocco

In this paper,we theoretically investigate the total optical coefficient(TOAC)considering 1S-2P and 2S-2P conduction subband transitions in a single parabolic quantum well(SPQW)with an on-center hydrogen-like *** the framework of the effective-mass approximation,the Schrödinger equation is solved numerically to obtain the eigenvalues and their corresponding eigenvectors using the finite difference *** calculations are performed for finite confinement potential height,taking into account the dielectric and effective mass mismatches between GaN and InGaN materials under the considered electric field and temperature *** temperature dependence of the effective mass,dielectric constant and band gap energy are obtained *** the one hand,the results show that a significant shift is produced with the variation of both the temperature and the intensity of the electric *** the other hand,the absorption spectrum is shifted to lower energies with increasing both electric field strength and ***,its amplitude is enhanced with an increase in the intensity of the electric field,and show a slight drop with increasing temperature for the two optical transitions *** results show that such parameters can be used to adjust the optical properties of single parabolic Quantum Well for solar cell applications.

关键词： TOAC optical transitions SPQW electric field intensity temperature hydrogenic-impurity

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Temperature Dependence of Urbach Energy in Non-Crystalline Semiconductors

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Optics and Photonics Journal 2020年第9期10卷 211-218页

作者： Rustam Ikramov Mashxura Nuriddinova Khurshidbek Muminov Ravshan Zhalalov Namangan Engineering and Technology Institute Namangan Uzbekistan Namangan State University Namangan Uzbekistan

Until now, no analytical relationships have been derived for the temperature dependence of the Urbach energy in non-crystalline semiconductors. Consequently, the problem associated with the theoretical study of the temperature dependence of this energy has not been solved. This paper presents the results of theoretical calculations and attempts to establish the temperature dependence of the Urbach energy in non-crystalline semiconductors. A linear increase in the Urbach energy with increasing temperature is shown.

关键词： Non-Crystalline Semiconductors Urbach Rules Urbach Energy optical transitions

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