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Pulse Laser Deposition of HfO_(2)Nanoporous-Like Structure,Physical Properties for device Fabrication

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Journal of Renewable Materials 2022年第11期10卷 2819-2834页

作者： Shams B.Ali Sarmad Fawzi Hamza Alhasan Evan T.Salim Forat H.Alsultany Omar S.Dahham Laser and Optoelectronic Engineering Department University of TechnologyBaghdadIraq Applied Science Department University of TechnologyBaghdadIraq Al-Mustaqbal University College Department of Medical PhysicsHillahIraq Center of Excellence Geopolymer and Green Technology Faculty of Engineering TechnologyUniversiti Malaysia PerlisPerlisMalaysia Department of Civil Engineering College of EngineeringCihan University-ErbilKurdistan RegionIraq

The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))*** many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was *** used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate *** optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation *** morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on *** regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V *** diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).

关键词： Pulse laser deposition nano films optoelectronics HfO_(2) optical device

Design of broadband achromatic metasurface device based on phase-change material Ge_(2)Sb_(2)Te_(5)

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Chinese Physics B 2022年第12期31卷 259-265页

作者： Shuyuan Lv Xinhui Li Wenfeng Luo Jie Jia Xi’an University of Posts&Telecommunications School of Electronic EngineeringXi’an 710121China

Based on the phase-change material Ge_(2)Sb_(2)Te_(5)(GST),achromatic metasurface optical device in the longer-infrared wavelength is *** the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST,the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5μm to 13μm are *** design results show that the achromatic metalenses can be focused on the same focal plane within the working *** simulation calculation results show that the fullwidth at half-maximum(FWHM)of the focusing spot reaches the diffraction limit at each *** addition,the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°.The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces,but also provides new possibilities for the integration of optical imaging,optical coding and other related optical systems.

关键词： metasurface optical device phase-change material achromatic

Effect of Different Etching Time on Fabrication of an Optoelectronic device Based on GaN/Psi

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Journal of Renewable Materials 2023年第3期11卷 1101-1122页

作者： Haneen D.Jabbar Makram A.Fakhri Mohammed Jalal Abdul Razzaq Omar S.Dahham Evan T.Salim Forat H.Alsultany U.Hashim Laser and Optoelectronic Engineering Department University of Technology-IraqBaghdadIraq Department of Civil Engineering College of EngineeringCihan University-ErbilKurdistan RegionIraq Department of Petroleum and Gas Refinery Engineering Al-Farabi University CollageBaghdadIraq Applied Science Department University of Technology-IraqBaghdadIraq Department of Medical Physics Al-Mustaqbal University CollegeBabylonIraq Institute of Nano Electronic Engineering University Malaysia PerlisKangarPerlisMalaysia

Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were *** optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric *** substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire *** pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and *** GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)*** properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi *** topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 *** GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after *** fabricated GaN/Psi film exhibited good electrical characteristics.

关键词： Gallium nitride porous silicon photoelectrochemical etching pulsed laser deposition optical device

Realization of Tip Tilting By 8-Step Line Tilting

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Communications in Theoretical Physics 2009年第9期52卷 549-554页

作者： CHEN Ying-Tian ZHANG Yang HU Sen HO Tso-Hsiu Boon Ham Lim Chen Sin Lim Department of Astronomy and Applied Physics University of Science and Technology of Cbina Hefei 230026 China Department of Mathematics University of Science and Technology of China Hefei 230026 China Institute of Theoretical Physics Chinese Academy of Sciences Beijing 100190 China

By direct calculation of rotation matrices of SO(3),we show how certain specific sequence of eight consecutiverotations of digital angles can yield a tilting of a facet *** also design a detailed program specifically to tiltan array of mirrors from planar orientation to the required focusing *** describe how to use the 8-step torealize the focusing of the mirror *** have found,in our designed program,an important feature of row-sharingduring the rotations for the columns and similarly the column-sharing during the rotations for the *** feature cansave a lot of operating time during the actual realization of the mechanical movements.

关键词： rotational group solar energy optical device tip tilting line tilting

Complex long-period-grating-assisted-coupler and its application in optical signal buffer

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Frontiers of Optoelectronics 2011年第3期4卷 315-319页

作者： Xiaowei DONG Weiwei JIANG Xiaojuan SHENG Laboratory of All optical Network and Advanced Telecommunication Network Institute of Lightwave Technology Beijing Jiaotong University

By introducing gain/loss perturbation into periodic refractive index modulation, the unified coupled-mode equations and their close-form analytical solutions of complex long-period-grating-assisted-coupler(LPGAC) are deduced. Characteristics of power coupling are investigated and results show that unidirectional nonreciprocal signal transferring can be achieved by matching gain/loss with the refractive index *** the feature of complex LPGAC, a novel optical signal buffer is proposed and its structure is examined in detail.

关键词： optical device long-period-grating-assisted-coupler optical signal buffer complex-modulated-grating

New ultrashort pulsewidth measurement technology based on interference jitter and FPGA platform

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Chinese Optics Letters 2022年第3期20卷 46-51页

作者： Jin Li Yanbo Dou Lixin Wang Jinhai Zou Yu Ding Hang Wang Qiujun Ruan Zhipeng Dong Zhengqian Luo Department of Electronic Engineering Xiamen UniversityXiamen 361005China Science and Technology on Electro-optical Information Security Control Laboratory Tianjin 300308China

Conventional ultrashort pulsewidth measurement technology is autocorrelation based on second-harmonic generation;however,nonlinear crystals and bulky components are required,which usually leads to the limited wavelength range and the difficult adjustment with free-space light ***,we proposed a compact all-fiber pulsewidth measurement technology based on the interference jitter(IJ)and field-programmable gate array(FPGA)platform,without requiring a nonlinear optical device(*** crystal/detector).Such a technology shows a wide measurement waveband from 1 to 2.15μm at least,a pulsewidth range from femtoseconds to 100 ps,and a small relative error of 0.15%-3.8%.In particular,a minimum pulse energy of 219 fj is experimentally detected with an average-power-peak-power product of 1.065×10^(-6)W^(2).The IJ-FPGA technology may offer a new route for miniaturized,user-friendly,and broadband pulsewidth measurement.

关键词： pulse width measurement interference jitter FPGA platform optical device

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in optical and Electronic devices

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Journal of Materials Science and Chemical Engineering 2023年第3期11卷 22-33页

作者： Opeyemi S. Akanbi Haruna A. Usman Gbemi F. Abass Kehinde E. Oni Akinsanmi S. Ige Bola P. Odunaro Idowu J. Ojo Julius A. Oladejo Halimat O. Ajani Adnan Musa Joshua Ajao Department of Pure and Applied Physics Ladoke Akintola University of Technology Ogbomosho Nigeria Department of Mechanical Engineering Jigawa State Polytechnic Dutse Nigeria Department of Materials Science and Engineering Hohai University Nanjing China Department of Mechanical Engineering Ekiti State University Ado Ekiti Nigeria Department of Materials Science and Engineering University of Colorado Boulder Boulder USA Department of Chemical Engineering Ladoke Akintola University of Technology Ogbomoso Nigeria Department of Mechanical Engineering Federal University of Technology Akure Nigeria Department of Biotechnology and Genetics Russian State Agrarian University Moscow Russia

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

关键词： Wide Bandgap Semiconductor Semiconductor Electronic device Power device optical device CZTS