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Impact of low/high-κ spacer-source overlap on characteristics of tunnel dielectric based tunnel field-effect transistor

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Journal of Central South University 2017年第11期24卷 2572-2581页

作者： JIANG Zhi ZHUANG Yi-qi LI Cong WANG Ping LIU Yu-qi School of Microelectronics Xidian UniversityXi’an 710071China

The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor(TD-FET) mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents consist of direct tunneling current and band-to-band tunneling(BTBT) current. Meanwhile, tunneling position of the TD-FET differs from conventional tunnel-FET in which the electron and hole tunneling occur at intermediate rather than surface in channel(or source-channel junction under gate dielectric). The 2-D nature of TD-FET current flow is also discussed that the on-current is degraded with an increase in the spacer width. BTBT current will not begin to play part in tunneling current until gate voltage is 0.2 V. We clearly identify the influence of the tunneling dielectric layer and spacer electrostatic field on the device characteristics by numerical simulations. The inserted Si_3N_4 tunnel layer between P+ region and N+ region can significantly shorten the direct and band-to-band tunneling path, so a reduced subthreshold slope(Ss) and a high on-current can be achieved. Above all the ambipolar current is effectively suppressed, thus reducing off-current. TD-FET demonstrates excellent performance for low-power applications.

关键词： tunnel dielectric based tunnel field-effect transistor tunnel field-effect transistor band-to-band tunneling tunneling dielectric layer subthreshold slope off-current on-current

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Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor

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Journal of Semiconductors 2014年第11期35卷 32-39页

作者： Shibir Basak Pranav Kumar Asthana Yogesh Goswami Bahniman Ghosh Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center 10100Burnet RoadBldg.160University of Texas at Austin

We propose a dynamic threshold voltage j unctionless tunnel FET （DT-JLTFET） in wnlcn me mresnolu voltage can be dynamically adjusted, resulting in higher on-current. Through 2D numerical simulations, it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to the adjust gate. The impact of the threshold voltage shift on the overall performance of the device is also studied. A comparison is made between the dynamic threshold voltage characteristics of a silicon JLTFET and a Sio.7Geo.3 source JLTFET.

关键词： SiGe tunnel field effect transistor on-current

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