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Effects of substrate temperature and annealing on the anisotropic magnetoresistive property of nife films

Rare Metals 2003年第3期22卷 202-205页

作者： WUPing WANGFengping QIUHong PANLiqing TIANYue DepartmentofPhysics UniversityofScienceandTechnologyBeijingBeijing100083China BeijingKeda-TianyuMicroelectronicMaterialTechnologyDevelopmentCo.Ltd Beijing100083China

Ni_(83)Fe_(17) films with a thickness of about 100 nm were deposited onthermal oxidized silicon substrates at ambient temperature, 240, 350, and 410℃ by DC magnetronsputtering. The deposition rate was about 0.11 nm/s. The as-deposited films were annealed at 450,550, and 650℃, respectively, in a vacuum lower than 3 x 10~3 Pa for 1 h. The Ni_(83)Fe_(17) filmsmainly grow with a crystalline orientation of [111] in the direction of the film growth. With theannealing temperature increasing, the [111] orientation enhances. For films deposited at all fourdifferent temperatures, the significant improvement on anisotropic magnetoresistance occurs at theannealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃,the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For filmsdeposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃annealing. The atomic force microscopy (AFM) observation shows a significant increase in grain sizeof the film deposited at 350℃ after 650℃ annealing. The decrease in resistivity and the increasein anisotropic magnetoresistance are caused by the decrease in point defects, the increase in grainsize, and the improvement in lattice structure integrity of the films.

关键词： condensed matter physics magnetics anisotropic magnetoresistance magnetronsputtering nife film

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Dependence of Magnetic Properties and Microstructure of Ni_(81)Fe_(19) film on Base Vacuum and Sputtering Pressure

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Journal of University of Science and Technology Beijing 2002年第1期9卷 45-47页

作者： HongchenZhao HongSi 等 MaterialsScienceandEngineeringSchool UniversityofScienceandTechnologyBeijing100083China CentralIronandSteelResearchInstitute Beijing100081China

The Ni_81Fe_19 / Ta films with different nife thickness were prepared atdifferent base vacuums and sputtering pressures. The results of magnetic measurement and atomicforce microscope (AFM) showed that the films prepared at higher base vacuum and lower sputteringpressure had larger DELTAR/R. The reason should be that higher base vacuum and lower sputteringpressure introduce larger grainsize and lower surface roughness, which will weaken the scattering ofelectrons, reduce the resistance R, and increase DELTAR/R.

关键词： nife film anisotropic magnetoresistance surface roughness grain-size

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Magnetic properties and structure of very thin permalloy films

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Journal of University of Science and Technology Beijing 2004年第3期11卷 225-229页

作者： Guanghua Yu Haifeng Li Tao Yang Fengwu Zhu Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China Mat. Sci. and Eng. Sch. Univ. of Sci. and Technol. Beijing Beijing 100083 China

In order to study the magnetic properties and structure of very thinpermalloy films, Ni_(81)Fe_(19) films of 12 nm in thickness were prepared by different instrumentsat an ultrahigh base vacuum and a lower base vacuum. The anisotropic magnetoresistance coefficients(ΔR/R) of Ni_(81)Fe_(19) (12 nm) films reached 1.6 % and 0.6 %, and the coercivities were 127 and334 A/m, respectively. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were usedto study the structure and surface chemical state. The experimental results show that the filmsprepared at the ultrahigh base vacuum have a smoother surface, a bigger grain size and a denserstructure with fewer defects than those prepared at the lower base vacuum.

关键词： nife film anisotropic magnetoresistance (AMR) coercivity structure

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