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Microstructure,hardening and deuterium retention in CVD tungsten irradiated with neutrons at temperatures of defect recovery stagesⅡandⅢ

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Tungsten 2022年第3期4卷 248-260页

作者： Xiao-Ou Yi Tatsuya Kuwabara Vladimir KhAlimov Yu-Feng Du Wen-Tuo Han Ping-Ping Liu Bin-You Yan Jiu-Peng Song Kenta Yoshida Takeshi Toyama Fa-Rong Wan Somei Ohnuki Yuji Hatano Yasuyoshi Nagai School of Materials Science and Engineering University of Science and Technology BeijingBeijing100083China Graduate School of Engineering Nagoya UniversityFuro-choChikusa-kuNagoya464-8063Japan Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of SciencesMoscow119071Russia Institute for Materials Research Tohoku UniversityNarita-cho 2145-2OaraiIbaraki311-1313Japan Xiamen Tungsten Co.Ltd. Xiamen361021China School of Materials Science and Engineering Xihua UniversityChengdu610039China Hydrogen Isotope Research Center University of ToyamaToyama930-8555Japan

Samples of ultra-high-purity tungsten prepared using chemical vapour deposition(CVD)technique were irradiated with neutrons at temperatures T_(irr)=373-483 K(stage Ⅱ of defect recovery)and T_(irr)=573-673 K(stage Ⅲ)up to 0.15 displacements per atom(dpa)in the Belgian reactor(BR2).The study of the microstructure of neutron-damaged samples using transmission electron microscopy(TEM)revealed visible defects with a predominance of dislocation loops.With an increase in the neutron irradiation temperature,the spatial distribution of the loops acquired pronounced inhomogeneity,and their average size moderately increased.Cavities and voids were not observed.irradiation-induced hardening was found and a linear correlation was obtained between Vickers microhardness and nanohardness for undamaged and neutron-irradiated CVD-W samples.irradiation of tungsten with neutrons led to a significant increase in the retention of deuterium,which accumulated mainly in vacancy-type traps.Furthermore,the influence of the columnar grain structure in low-dose neutron-irradiated tungsten seemed to be non-trivial upon deuterium retention.

关键词： CVD-W neutron irradiation Microstructure Hardening Deuterium retention

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Radiation dose effects on the morphological development of M_(1) generation pea(Pisum sativum)

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Nuclear Science and Techniques 2021年第11期32卷 63-76页

作者： Da-Peng Xu Hu-Yuan Feng Jian-Bin Pan Ze-En Yao Jun-Run Wang School of Nuclear Science and Technology Lanzhou UniversityLanzhou 730000China School of Life Sciences Lanzhou UniversityLanzhou 730000China Engineering Research Center for neutron Application Technology Ministry of EducationLanzhou UniversityLanzhou 730000China

We irradiated pea seeds with neutrons from a ^(252)Cf source and studied the radiation dose effects on various morphological development parameters during the growth of M_(1) generation peas.We found that in the dose range of 0.51-9.27 Gy,with the increase in neutron-absorbed dose,the morphological development parameters of M_(1) generation peas at the initial seedling stage showed an obvious trend with three fluctuations.With the development of pea,this trend gradually weakened.Further analysis and verification showed that the main trend in the M_(1) generation of pea seeds was an inhibitory effect induced by neutron irradiation and there was a good linear correlation between the inhibitory effect and neutron absorption dose We successfully demonstrated the background removal of mutant plants and defined morphological developmen parameters for peas that match the overall development of plants.Our results will positively impact neutron mutation breeding and automatic agriculture.

关键词： neutron irradiation Pea(Pisum sativum) ^(252)Cf source Radiation does effects Absorbed dose Morphological development

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A neutron radiation-hardened superluminescent diode

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Journal of Semiconductors 2012年第9期33卷 69-73页

作者：焦健谭满清赵妙常金龙 Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

We present a novel superluminescent diode （SLD） with high optical performances for hardened neutron irradiation. The degradation of the light output from the SLDs is caused by a reduction of the minority carrier lifetime resulting from displacement damage after high-energy neutron irradiation. The SLDs with a higher pre- irradiation light output will be less sensitive to radiation. We have selected an InGaAsP/InP multi-quantum well （MQW） as the active region structure for its performance, its high optical gain and minute active region. Graded- index separate-confinement-heterostructure （GRIN-SCH） has been applied for the waveguide structure. A specific absorbing region and anti-reflective coatings have been designed and optimized. Moreover, the radiation test results indicate that the SLD with an InGaAsP/InP MQW structure has better neutron hardening ability than the SLD with DH structures after a 6×10^13-1×10^14 n/cm^2 1 MeV neutron irradiation.

关键词： superluminescent diode neutron irradiation InGaAsP/InP multi-quantum well

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Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

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Chinese Physics B 2017年第1期26卷 542-546页

作者：潘霄宇郭红霞罗尹虹张凤祁丁李利魏佳男赵雯 Northwest Institute of Nuclear Technology Xi'an 710024 China

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.

关键词： displacement damage neutron irradiation single event latchup TCAD simulation

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Effects of alloying elements Mn,Mo,Ti,Si,P and C on the incubation period of void swelling in austenitic stainless steels

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Tungsten 2021年第1期3卷 3-19页

作者： Toshimasa Yoshiie Qiu Xu Institute for Integrated Radiation and Nuclear Science Kyoto UniversityOsaka 590‑0494Japan

Void swelling,which induces the degradation of the original properties of nuclear materials under high-energy particleirradiation,is an important problem.The incubation period,a transient stage before the steady void growth,determines the duration of service of nuclear materials.Several experimental studies have been performed on void observations by transmission electron microscopy(TEM),which,however,has a resolution limit for the size of defect clusters.Positron annihilation lifetime spectroscopy(PALS)enables the detection of small vacancy clusters,single vacancies,dislocations and precipitates.The use of these two methods provides complementary information toward detecting defect information in the incubation period.Here,defect structures during the incubation period in austenitic stainless steels,by means of PALS and TEM are reviewed.The role of alloying elements into determining the period is explained.Furthermore,the existing problems and research directions in this field are presented.

关键词： Austenitic stainless steels Void swelling Incubation period neutron irradiation Positron annihilation lifetime spectroscopy

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Atomic-scale mechanisms of void strengthening in tungsten

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Tungsten 2021年第1期3卷 65-71页

作者： Yuri N.Osetsky Materials Science and Technology Division Oak Ridge National LaboratoryOak RidgeTN 37831USA

neutron and heavy-ion irradiation of tungsten produces nanometer-size vacancy voids,gas-filled bubbles and dislocation loops.These defect features can a ect mechanical properties and the impact can be quite significant because of their high density.Understanding the basic mechanisms of mechanical properties degradation is necessary for predicting radiation e ects.Predictions can be made using discrete dislocation dynamics or/and finite element approaches which,however,need local interaction mechanisms as inputs.Such knowledge can be provided only by atomic-scale modeling.This paper reports the results of an extensive atomic-scale modeling study of the interactions between moving edge dislocations and voids in tungsten.The main focus is on the e ects of the void size and ambient temperature.Critical resolved shear stress was calculated for voids up to 9 nm in diameter.Atomistic results are compared with the theoretical approach and with those obtained earlier for voids in body centered cubic(bcc)iron.An important role of the void surface has been revealed.

关键词： Tungsten neutron irradiation Voids Radiation-induced hardening Dislocations Dispersed barrier hardening

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Characteristics of Positron Trapping at Defects in neutron－irradiated Silicon Grown in Argon Atmosphere

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Rare Metals 1994年第2期13卷 101-107页

作者：孟祥提清华大学核能技术所北京

The positron lifetime spectroscopy and Doppler-broadening measurements indicate that there alwaysare some V-type defects in FZ Si during annealing from room temperature to 1150℃ . In NTD (neutrontransmutation doped) Si irradiated by 6×10￣(16) neutrons/ cm￣2 the main defect is V-type, the V_2 defectshave only an intensity of 7.3% and anncal out at the temperature lower than 200℃ . In NTD Si irradiatedby 1.2×10￣(18) neutrons/cm￣2 the intensities due to V- and V_2type defects are 59% and 35%. The formerdisappears at 55℃ . the latter increases above 200℃ , decreases greatly above 550℃ , and disappears at650℃ . In addition, V_4 appears at 125～200℃, V_4 and / or V_5 defects at 400～600℃ in high-dose irradiated NTD Si. It seems that radiation doses have a bigger influence on the formation and annealing behaviorof secondary V_2type defects. Above 700℃ a lot of dislocations and / or monovacancy-type defects are formed.

关键词： Positron annihilation neutron irradiation Silicon

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Accelerated oxygen precipitation in fast neutron irradiated Czochralski silicon

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Chinese Physics B 2005年第9期14卷 1882-1885页

作者：马巧云李养贤陈贵锋杨帅刘丽丽牛萍娟陈东风李洪涛 School of Material Science and Engineering Hebei University of Technology Tianjin 300130 China School of Information and Communication Engineering Tianjin Polytechnic University Tianjin 300160 China China Institute of Atomic Energy Beijing 102413 China

Annealing effect of the oxygen precipitation and the induced defects have been investigated on the fast neutron irradiated Czochralski silicon （CZ-Si） by infrared absorption spectrum and the optical microscopy. It is found that the fast neutron irradiation greatly accelerates the oxygen precipitation that leads to a sharp decrease of the interstitial oxygen with the annealing time. At room temperature （RT）, the 1107cm^-1 infrared absorption band of interstitial oxygen becomes weak and broadens to low energy side. At low temperature, the infrared absorption peaks appear at 1078cm^-1, 1096cm^-1, and 1182cm^-1, related to different shapes of the oxygen precipitates. The bulk microdefects, including stacking faults, dislocations and dislocation loops, were observed by the optical microscopy. New or large stacking faults grow up when the silicon self-interstitial atoms are created and aggregate with oxygen precipitation.

关键词： oxygen precipitation neutron irradiation defects CZ-Si

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