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Large-area(64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor(nmos) inverters

引用

Journal of Materials Science & Technology 2021年第22期81卷 26-35页

作者： Shuangshuang Shao Kun Liang Xinxing Li Jinfeng Zhang Chuan Liu Zheng Cui Jianwen Zhao Printable Electronics Research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou215123China School of Engineering Westlake UniversityHangzhou310024China Zhejiang University Hangzhou310027China The Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology School of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou510275China

It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed ***,a self-confined inkjet printing technology has been developed to construct large-area(64×64 array),high-resolution and high-performance metal oxide bilayer(In_(2)O_(3)/IGZO)heterojunction TFTs with independent bottom gates on transparent glass *** printing In_(2)O_(3) dot arrays with the diameters from 55 to 70μm and the thickness of~10 nm were firstly deposited on UV/ozone treated AlO_(x) dielectric layers,and then IGZO dots were selectively printed on the top of In_(2)O_(3) dots by self-confined technology to form In_(2)O_(3)/IGZO heterojunction *** the inkjet-printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films,the mobility of the resulting printed In_(2)O_(3)/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm^(2) V^(-1) s^(-1) with excellent on/off ratios(>10^(8))and negligible ***,the printed N-Metal-Oxide-Semiconductor(nmos)inverter consisted of an In_(2)O_(3)/IGZO TFT and an IGZO TFT has been demonstrated,which show excellent performance with the voltage gain up to *** strategy demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates,circuits and display driving circuits.

关键词： Inkjet printing Heterojunction channel 64×64 arrays High mobility nmos inverter

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