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All optical nand gate based on nonlinear photonic crystal ring resonator

Information Processing in Agriculture 2016年第2期3卷 119-123页

作者： Somaye Serajmohammadi Hassan Absalan Young Researchers and Elite Club Ahar BranchIslamic Azad UniversityAharIran Department of Physics Ahar BranchIslamic Azad UniversityAharIran

In this paper we proposed a new design for all optical nand gate.By combining nonlinear Kerr effect with photonic crystal ring resonators,we designed an all optical nand gate.A typical nand gate is a logic device with one bias and two logic input and one output ports.It has four different combinations for its logic input ports.The output port of the nand gate is OFF,when both logic ports are ON,otherwise the output port will be ON.The switching power threshold obtained for this structure equals to 1.5 kW/lm2.For designing the proposed optical logic gate we employed one resonant ring whose resonant wavelength is at 1554 nm.The functionality of the proposed nand gate depends on the operation of this resonant ring.When the power intensity of optical waves is less than the switching threshold the ring will couple optical waves into drop waveguide otherwise the optical waves will propagate on the bus waveguide.

关键词： Photonic crystal nand gate Band gap

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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

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Journal of Semiconductors 2011年第6期32卷 69-72页

作者：谢元斌全思马晓华张进城李青民郝跃 Key Laboratory of Wide Bandgap Semiconductor Materials and Devices Institute of MicroelectronicsXidian University

Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,nand gate and D flip-flop,were fabricated on an AlGaN/GaN heterostructure.The D flip-flop and nand gate are demonstrated in a GaN system for the first time.The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the nand gate and shrinking the area,integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a nand gate.E/D-mode D flip-flop was fabricated by integrating the inverters and the nand gate on the AlGaN/GaN heterostructure.At a supply voltage of 2 V,the E/D inverter shows an output logic swing of 1.7 V,a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V.The nand gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.

关键词： AlGaN/GaN fluorine plasma treatment inverter nand gate D flip-flop

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