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Vertical multiple-layer structure of temperature and turbulent diffusivity in the South China Sea

Acta Oceanologica Sinica 2022年第10期41卷 14-21页

作者： Xin He Changrong Liang Yang Yang Guiying Chen Xiaodong Shang Xiaozhou He Penger Tong State Key Laboratory of Tropical Oceanography South China Sea Institute of OceanologyChinese Academy of SciencesGuangzhou510301China University of Chinese Academy of Sciences Beijing100049China Southern Marine Science and Engineering Guangdong Laboratory(Guangzhou) Guangzhou511458China Institution of South China Sea Ecology and Environmental Engineering Chinese Academy of SciencesGuangzhou510301China Institute of Deep-Sea Science and Engineering Chinese Academy of SciencesSanya572000China School of Mechanical Engineering and Automation Harbin Institute of TechnologyShenzhen518055China Department of Physics Hong Kong University of Science and TechnologyHong Kong999077China

We report field measurements of vertical profiles of the turbulent diffusivity and temperature at different stations in the South China Sea(SCS).Our study shows that the measured turbulent diffusivity follows a power-law distribution with a varying exponent in water *** multiple-layer scaling regimes were also observed from the temperature *** turbulent diffusivity and temperature fluctuations,the vertical structure of temperature was ***,we discussed the temperature profiles in each layer.A constant function of a dimensionless temperature profile was found in water layers that have identical turbulence *** results reveal the multiple-layer structure of temperature in the *** study contributes to the understanding of the vertical structure of multiple layers in the SCS and provides clues for exploring the physical mechanism for maintaining the temperature structure.

关键词： temperature profile turbulent diffusivity South China Sea multiple layers

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Advance in the Growth of Ordered Ge/Si Quantum Dots

Advance in the Growth of Ordered Ge/Si Quantum Dots

引用

2012 China Functional Materials Technology and Industry Forum

作者： Hai-peng Wang Chong Wang Jie Yu Jie Yang Yu Yang Institute of Optoelectronic Information Materials Yunnan University

Recent progress in the growth of ordered Ge/Si quantum dots(QDs) is *** focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam *** addition,the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed,such as nanosphere lithography technology, extreme ultra-violet interference lithography technology,nanoimprint lithography technology,etc.

关键词： Ordering Ge/Si quantum dots multiple layers Ion beam irradiation Patterned substrate

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