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Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Nano-Micro Letters 2023年第2期15卷 161-171页

作者： Minjong Lee Tae Wook Kim Chang Yong Park Kimoon Lee Takashi Taniguchi Kenji Watanabe Min‑gu Kim Do Kyung Hwang Young Tack Lee Department of Electrical and Computer Engineering Inha UniversityIncheon 22212Republic of Korea Department of Materials Science and Engineering The University of Texas at DallasRichardsonTX 75080USA Center for Opto‑Electronic Materials and Devices Post‑Silicon Semiconductor InstituteKorea Institute of Science and Technology(KIST)Seoul 02792Republic of Korea Department of Physics Kunsan National UniversityGunsan 54150Republic of Korea Advanced Materials Laboratory National Institute for Materials ScienceTsukuba 305‑0044Japan Department of Information and Communication Engineering Inha UniversityIncheon 22212Republic of Korea Division of Nanoscience and Technology KIST SchoolUniversity of Science and Technology(UST)Seoul 02792Republic of Korea Department of Electronic Engineering Inha UniversityIncheon 22212Republic of Korea

Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction *** this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential *** phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge ***-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer ***,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

关键词： Graphene bridge Heterostructure device Non-classical transfer characteristics multi-value logic inverter Frequency tripler

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