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A review of mott insulator in memristors:The materials,characteristics,applications for future computing systems and neuromorphic computing

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Nano Research 2023年第1期16卷 1165-1182页

作者： Yunfeng Ran Yifei Pei Zhenyu Zhou Hong Wang Yong Sun Zhongrong Wang Mengmeng Hao Jianhui Zhao Jingsheng Chen Xiaobing Yan Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province College of Electronic and Information EngineeringInstitute of Life Science and Green DevelopmentHebei UniversityBaoding 071002China Department of Materials Science and Engineering National University of SingaporeSingapore 117576Singapore

mott insulator material,as a kind of strongly correlated electronic system with the characteristic of a drastic change in electrical conductivity,shows excellent application prospects in neuromorphological calculations and has attracted significant attention in the scientific ***,computing systems based on mott insulators can overcome the bottleneck of separated data storage and calculation in traditional artificial intelligence systems based on the von Neumann architecture,with the potential to save energy,increase operation speed,improve integration,scalability,and three-dimensionally stacked,and more suitable to neuromorphic computing than a complementary *** this review,we have reviewed mott insulator materials,methods for driving mott insulator transformation(pressure-,voltage-,and temperature-driven approaches),and recent relevant applications in neuromorphic *** results in this review provide a path for further study of the applications in neuromorphic calculations based on mott insulator materials and the related devices.

关键词： mott insulator the strongly correlated electronic system memristor neuromorphological calculations

Experimental observation of pseudogap in a modulation-doped mott insulator:Sn/Si(111)-(√3×√3)R30°

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Chinese Physics B 2022年第6期31卷 115-119页

作者： Yan-Ling Xiong Jia-Qi Guan Rui-Feng Wang Can-Li Song Xu-Cun Ma Qi-Kun Xue State Key Laboratory of Low-Dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China Frontier Science Center for Quantum Information Beijing 100084China Beijing Academy of Quantum Information Sciences Beijing 100193China Southern University of Science and Technology Shenzhen 518055China

Unusual quantum phenomena usually emerge upon doping mott *** a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modulation-doped mott insulator Sn/Si(111)-(√3×√3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn *** pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the mott insulating *** findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.

关键词： pseudogap(PG) modulation doping mott insulator scanning tunneling microscope(STM)

Ultrafast dynamics in photo-excited mott insulator Sr_(3)Ir_(2)O_7 at high pressure

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Chinese Physics B 2024年第1期33卷 149-155页

作者：尹霞张建波王东 Takeshi Nakagawa 夏春生张曹顺郭伟程昌峻丁阳 Center for High-Pressure Science and Technology Advanced Research Beijing 100094China College of Physics and Information Technology Shaanxi Normal UniversityXi'an 710119China

High-pressure ultrafast dynamics,as a new crossed research direction,are sensitive to subtle non-equilibrium state changes that might be unresolved by equilibrium states measurements,providing crucial information for studying delicate phase transitions caused by complex interactions in mott *** time-resolved transient reflectivity measurements,we identified the new phases in the spin–orbit mott insulator Sr_(3)Ir_(2)O_7 at 300 K that was previously unidentified using conventional approaches such as x-ray *** pressure-dependent variation of the amplitude and lifetime obtained by fitting the reflectivity?R/R reveal the changes of electronic structure caused by lattice distortions,and reflect the critical phenomena of phase *** findings demonstrate the importance of ultrafast nonequilibrium dynamics under extreme conditions for understanding the phase transition of mott insulators.

关键词： ultrafast dynamics high pressure phase transition mott insulator

Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2) mott insulator

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Science Bulletin 2021年第14期66卷 1395-1400,M0003页

作者： Haiwei Li Shusen Ye Jianfa Zhao Changqing Jin Yayu Wang State Key Laboratory of Low Dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Frontier Science Center for Quantum Information Beijing 100084China

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2)parent mott insulator of *** find that when the two dopants approach each other,the transfer of spectral weight from high energy Hubbard band to low energy ingap state creates a broad peak and nearly V-shaped gap around the Fermi *** peak position shows a sudden drop at distance around 4 a_(0)and then remains almost *** in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu *** results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.

关键词： Cuprates mott insulator Charge transfer gap Impurity state Scanning tunneling microscopy

Superfluid-mott-insulator Phase .Transition of Bosons in an Optical Lattice

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Communications in Theoretical Physics 2007年第5期47卷 897-900页

作者： ZHU Rui Department of Physics Tsinghua University Beijing 100084 China

The Bose-Hubbard model describing interacting bosons in an optical lattice is reduced to a simple spin-1 XY model with single-ion anisotropy in the vicinity of the Mort phase. We propose a mean-field theory based on a constraint SU（3） pseudo-boson representation on the effective model to study the properties of the superfluid-mott-insulator phase transition. By calculating the elementary excitation spectra and the average particle number tluctuation in the Brillouin zone center, we lind that the energy gaps vanish continuously around （JXY/Jz）c≈ 0.175 and （JxY/Jz）c ≈ 0.094 for 2D and 3D cubic lattices respectively, where the superfluid order parameters come up from zero and the Mort insulator state changes into a superfluid state.

关键词： superfluid mott insulator cold atom optical lattice

Fast impurity solver for dynamical mean field theory based on second order perturbation around the atomic limit

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Chinese Physics B 2010年第8期19卷 535-542页

作者：庄嘉宁刘青梅方忠戴希 Institute of Physics Chinese Academy of Sciences

This paper proposes an impurity solver for the dynamical mean field theory （DMFT） study of the mott insulators, which is based on the second order perturbation of the hybridization function. After careful benchmarking with quantum Monte Carlo results on the anti-ferromagnetic phase of the Hubbard model, it concludes that this impurity solver can capture the main physical features in the strong coupling regime and can be a very useful tool for the LDA （local density approximation）＋ DMFT studies of the Mort insulators with long range order.

关键词： dynamical mean field theory impurity solver mott insulator antiferromagnetic order

Modulation of electronic state in copper-intercalated 1T-TaS_(2)

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Nano Research 2022年第5期15卷 4327-4333页

作者： Wenhao Zhang Degong Ding Jingjing Gao Kunliang Bu Zongxiu Wu Li Wang Fangsen Li Wei Wang Xuan Luo Wenjian Lu Chuanhong Jin Yuping Sun Yi Yin Zhejiang Province Key Laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310027China State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Key Laboratory of Materials Physics Institute of Solid State PhysicsHFIPSChinese Academy of SciencesHefei 230031China Vacuum Interconnected Nanotech Workstation(Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China High Magnetic Field Laboratory HFIPSChinese Academy of SciencesHefei 230031China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China

Intercalation is an effective method to modify physical properties and induce novel electronic states of transition metal dichalcogenide(TMD)***,it is difficult to reveal the microscopic electronic state evolution in the intercalated *** we successfully synthesize the copper-intercalated 1T-TaS_(2) and characterize the structural and electronic modification combining resistivity measurements,atomic-resolution scanning transmission electron microscopy(ADF-STEM),and scanning tunneling microscopy(STM).The intercalated Cu atom is determined to be directly below the Ta atom and suppresses the commensurate charge density wave(CCDW)*** specific electronic modulations are discovered in the near-commensurate(NC)CDW phase:the electron doping state near the defective star of Davids(SDs)in metallic domains and the spatial evolution of the mott gap in insulating *** modulations reveal that intercalated Cu atoms act as a medium to enhance the interaction between intralayer SDs,in addition to the general charge transfer *** also solidifies the mott foundation of the insulating gap in pristine *** intriguing electronic evolution in Cu-intercalated 1T-TaS_(2) will motivate further exploration of novel electronic states in the intercalated TMD materials.

关键词： intercalation scanning tunneling microscopy mott insulator charge transfer electron doping

Evidence for distortion-induced local electric polarization in α-RuCl_(3)

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Science China(Physics,Mechanics & Astronomy) 2024年第9期67卷 165-173页

作者： Xinrun Mi De Hou Xiao Wang Sabreen Hammouda Caixing Liu Zijian Xiong Han Li Yan Liu Guiwen Wang Aifeng Wang Yisheng Chai Yang Qi Wei Li Xiaoyuan Zhou Yixi Su DIKhomskii Mingquan He Zhigao Sheng Young Sun College of Physics Center of Quantum Materials and DevicesChongqing UniversityChongqing 401331China Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field LaboratoryHefei Institutes of Physical ScienceAnhuiChinese Academy of SciencesHefei 230031 China University of Science and Technology of China Hefei 230026China Jülich Centre for Neutron Scienceat Heinz Maier-Leibnitz Zentrum(JCNS-MLZ) Forschungszentrum Jülich GmbHGarching D-85747Germany School of Physics Beihang UniversityBeijing 100191China Analytical and Testing Center Chongqing UniversityChongqing 401331China State Key Laboratory of Surface Physics Department of PhysicsFudan UniversityShanghai 200433China CAS Key Laboratory of Theoretical Physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Ⅱ.Physikalisches Institut Universität zu KölnKöln D-50937Germany

The spin-orbit assisted mott insulator α-RuCl_(3) is a prime candidate for material realization of the Kitaev quantum spin *** little attention has been paid to charge degrees of freedom,charge effects,such as electric polarization,may arise in this ***,we report distortion-induced local electric polarization in α-RuCl_(3) as evidenced by single-crystal X-ray diffraction,second harmonic generation(SHG)and dielectric *** SHG signal appears at room temperature and develops substantially in the Kitaev paramagnetic state when short-range spin correlations come into *** sizable pyroelectric currents in the Kitaev paramagnetic state,the absence of hysteresis in the polarization-electric field(P-E)points to the shortrange nature of electric *** localized electric polarization is likely the result of distortion-induced charge dimerization,achieved through virtual hopping-induced charge *** addition,the electric polarization is boosted by short-range spin correlations via spin-phonon coupling in the Kitaev paramagnetic *** results emphasize the importance of charge degrees of freedom in α-RuCl_(3),which establish a novel platform to investigate charge effects in Kitaev materials.

关键词： mott insulator Kitaev quantum spin liquid electric polarization

Quantum Monte Carlo study of hard-core bosons in Creutz ladder with zero flux

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Chinese Physics B 2018年第1期27卷 236-239页

作者：林洋郝维昌郭怀明 Department of Physics Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education) Beihang University

The quantum phase of hard-core bosons in Creutz ladder with zero flux is studied. For a specific regime of the parameters （tx = tp,ty 〈 0）, the exact ground-state is found analytically, which is a dimerized insulator with one electron bound in each rung of the ladder. For the case tx, ty, tp 〉 0, the system is exactly studied using quantum Monte Carlo （QMC） method without a sign problem. It is found that the system is a mott insulator for small tp and a quantum phase transition to a superfluid phase is driven by increasing tp. The critical t~ is determined precisely by a scaling analysis. Since it is possible that the Creutz ladder is realized experimentally, the theoretical results are interesting to the cold-atom experiments.

关键词： quantum Monte Carlo method Creutz ladder mott insulator