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A novel approach towards molecular memory device in gate tunable structure of MoS_(2)-graphene

Nano Research 2021年第1期14卷 177-184页

作者： Rahul Tripathi Abha Misra Department of Instrumentation and Applied Physics Indian Institute of Sciencey BangaloreKarnataka 560012India

molecular interaction in two-dimensional(2D)van der Waals(vdW)interfaces has drawn tremendous attention for extraordinary materials *** sensing characteristics of molecular interaction has been exploited extensively to reach the detection limit to a few parts-per-billion(ppb)of molecules and far less attention is given to the evolution of persistent current state due to the molecular *** study focuses on molecular memory operation of MoS_(2)-graphene heterostructure based field effect *** resistance state of the device due to the external perturbation of molecules is tuned to get a nearly relaxation free current state at much lower molecular concentration of 10 ppb tofacilitate non-volatile memory features for molecular memory *** ultrafast switching operation in milli-second order is achieved at room temperature for the fastest recovery obtained sofar in any molecular *** process is co-controlled both by molecular as well as external charge density.

关键词： MoS_(2) graphene field effect transistor molecular memory trap charges

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Fabrication of a 256-bits organic memory by soft x-ray lithography

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Chinese Physics B 2010年第5期19卷 499-504页

作者：刘兴华鲁闻生姬濯宇涂德钰朱效立谢常青刘明 Microfabrication and Nanotechnology Lab Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Colloid and Interface Science Center of Molecular SciencesInstitute of ChemistryChinese Academy of Sciences

This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.

关键词： molecular memory crossbar array soft x-ray lithography electron beam lithography

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Electropolymerized films of redox-active ruthenium complexes for multistate near-infrared electrochromism,ion sensing,and information storage

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Chinese Chemical Letters 2016年第8期27卷 1105-1114,1464页

作者： Jiang-Yang Shao Chang-Jiang Yao Bin-Bin Cui Zhong-Liang Gong Yu-Wu Zhong Beijing National Laboratory for molecular Sciences CAS Key Laboratory of Photochemistry Institute of Chemistry Chinese Academy of SciencesBeijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China

This paper summarizes our recent progress on the preparations and applications of electropolymerized thin films of redox-active ruthenium *** films of vinyl-functionalized diruthenium or ruthenium-amine conjugated complexes are prepared by reductive *** resulting films are useful for multistate near-infrared electrochromism,ion sensing,and mimicking flip-flop and flip-flap-flop logic *** oxidative electropolymerization of diruthenium complexes with two distal triarylamine units affords electropolymers with an alternating diruthenium and tetraphenylbenzidine structural *** applications of the resulting films in multistate near-infrared electrochromism and resistive memory are discussed.

关键词： Electropolymerization Ruthenium complexes Electrochromism Thin films molecular memory

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