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The current state of the plant diversity in the Tlemcen region(Northwest Algeria)

Open Journal of Ecology 2012年第4期2卷 244-255页

作者： Smain El-Amine Henaoui Mohammed Bouazza Department of Biology and Environment Faculty of Natural Sciences and Life and Earth Sciences and the UniverseUniversity of TlemcenTlemcenAlgeria

Tlemcen region is characterized by a Mediterranean climate, with a remarkable vegetal cover. The latter is influenced by the anthropozoological action. For that, we realized a phytoecological study based on the minimum area classical method [1] which allows us to have a good overview on plant biodiversity and better analyze and interpret the vegetation at different levels (systematic composition;biological, morphological and biogeographical characterizations;stratification;and plant species inventory which we hope comprehensive). The results show that our ecosystems are disrupted because therophytisation, before last vegetation dynamics element [2], settles giving up a few feet of cork and holm oaks species of ancient forest.

关键词： Phytoecology Plant Diversity minimum area Anthropic Action Tlemcen(Western Algeria)

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A Simulation Study for Typical Design Rule Patterns in 5 nm Logic Process with EUV Photolithographic Process

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Journal of Microelectronic Manufacturing 2019年第4期2卷 33-39页

作者： Yanli Li Qiang Wu Shoumian Chen Shanghai IC R&D Center 497 Gaosi RoadZhangjiang Hi-Tech ParkChinaShanghai 201210

5 nm logic technology node is believed to be the first node that will adopt Extremely Ultra-Violet(EUV)lithography on a large *** have done a simulation study for typical 5 nm logic design rule *** a 5 nm logic photo process,the most appropriate layers for the EUV lithography are the cut layers,metal layers,and via *** speaking,critical structures in a lithography process are semi-dense patterns,also known as the“forbidden pitch”patterns,the array edge structures,tip-to-tip structures,tip-to-line structures(under 2D design rules),the minimum area structures,the bi-lines,tri-lines,…,*** to that from the 193 nm immersion process,the behaviors for the above structures are *** example,in the 193 nm immersion process,the minimum area is about 2~3 times that of minimum pixel squared,while in EUV photolithographic process,the minimum achievable area is found to be significantly *** the simulation,we have kept aware of the stochastics impact due to drastically reduced number of photons absorbed compared to the DUV process,the criteria used for various structures of image contrast are *** example,in 193 nm immersion lithography,we have usually set the minimum Exposure Latitude(EL)for the poly layer,the metal layer,and tip-to-tip pattern,respectively,at 18%,13%,and 10%.However,in EUV lithography,reasonable targets for the minima are,respectively,>18%,18%,and 13%.We have also studied the aberration and shadowing impact to the above design rule *** will present the results of our work and our explanations.

关键词： 5nm design rule minimum area minimum exposure latitude aberration shadowing effect

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