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Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

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Chinese Physics B 2010年第4期19卷 408-412页

作者：李卫徐岭赵伟明丁宏林马忠元徐骏陈坤基 National Laboratory of Solid State Microstructures and Department of Physics Nanjing University College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications

This paper reports that metal-oxide-semiconductor （MOS） capacitors with a single layer of Ni nanopartictes were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO2 layer on p-type Si （100）. Capacitance-voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance-time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 104 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.

关键词： metal-oxide-semiconductor capacitance-voltage capacitance time Ni nanoparticles

Strain induced changes in performance of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex MOSFETs and circuits for digital applications

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Journal of Central South University 2017年第6期24卷 1233-1244页

作者： Kumar Subindu Kumari Amrita Das Mukul K Department of Electronics Engineering Indian School of MinesDhanbad 826004India

Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.

关键词： complementary metal-oxide-semiconductor (CMOS) high-k dielectric material inverter metal-oxide-semiconductor field-effect transistors (MOSFETs) SiGe series resistance strain

Enhanced quality of Al_(2)O_(3)/SiC gate stack via microwave plasma annealing

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Rare metals 2024年第10期43卷 5362-5371页

作者： Nan-Nan You Xin-Yu Liu Qian Zhang Zhen Wang Jia-Yi Wang Yang Xu Xiu-Yan Li Yu-Zheng Guo Sheng-Kai Wang High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China School of Electrical Engineering and Automation Wuhan UniversityWuhan430072China Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate *** designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced *** interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main *** plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface *** study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.

关键词： Silicon carbide Al_(2)O_(3) metal-oxide-semiconductor Microwave plasma annealing Defect repairs X-ray photoelectron spectroscopy

A review of rare-earth oxide films as high k dielectrics in MOS devices——Commemorating the 100th anniversary of the birth of Academician Guangxian Xu

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Journal of Rare Earths 2021年第2期39卷 121-128页

作者： Shuan Li Youyu Lin Siyao Tang Lili Feng Xingguo Li Beijing National Lnboratory of Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and ApplicationsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China School of Chemical&Environmental Engineering China University of Mining and Technology(Beijing)Beijing 100083China

Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon *** paper reviews the recent development of rare earth oxide-based gate dielectric *** at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).

关键词： Rare earth Thin film oxides High k dielectric metal-oxide-semiconductor

Improving interfacial and electrical properties of HfO_(2)/SiO_(2)/p-Si stacks with N_(2)-plasma-treated SiO_(2) interfacial layer

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Rare metals 2023年第6期42卷 2081-2086页

作者： Xiao-Qiang Chen Yu-Hua Xiong Jun Du Feng Wei Hong-Bin Zhao Qing-Zhu Zhang Wen-Qiang Zhang Xiao-Ping Liang Advanced Electronic Materials Institute General Research Institute for Nonferrous MetalsBeijing100088China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing100088China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China

The effect of N_(2)-plasma-treated SiO_(2) interfacial layer on the interfacial and electrical characteristics of HfO_(2)/SiO_(2)/p-Si stacks grown by atomic layer deposition(ALD) was *** microstructure and interfacial chemical bonding configuration of the HfO_(2)/SiO_(2)/Si stacks were also examined by high-resolution transmission electron microscopy(HRTEM) and X-ray photoelectron spectroscopy(XPS).Compared with the samples without N2-plasma treatment,it is found that the samples with N2-plasma treatment have less oxygen vacancy density for SiO_(2) interfacial layer and better HfO_(2)/SiO_(2) *** agreement with XPS analyses,electrical measurements of the samples with N2-plasma treatment show better interfacial quality,including lower interface-state density(Dit,9.3 × 1011 cm^(-2)·eV^(-1) near midgap) and lower oxidecharge density(Q_(ox),2.5 × 1012 cm^(-2)),than those of the samples without N_(2)-plasma ***,the samples with N_(2)-plasma treatment have better electrical performances,including higher saturation capacitance density(1.49 μF·cm^(-2)) and lower leakage current density(3.2 × 10^(-6) A·cm^(-2) at V_(g)=V_(fb)-1 V).Furthermore,constant voltage stress was applied on the gate electrode to investigate the reliability of these *** shows that the samples with N_(2)-plasma treatment have better electrical stability than the samples without N_(2)-plasma treatment.

关键词： metal-oxide-semiconductor High-k Atomic layer deposited N_(2)-plasma treatment Interfacial characteristic Reliability

A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

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Journal of semiconductors 2006年第12期27卷 2089-2093页

作者：黄北举陈弘达刘金彬顾明刘海军中国科学院半导体研究所集成光电子学国家重点实验室北京100083

We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.

关键词： carrier accumulation plasma dispersion effect electro-optic phase modulator metal-oxide-semiconductor optoelectronic integrated circuit