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medium-temperature baking of 1.3 GHz superconducting radio frequency single-cell cavity

Radiation Detection Technology and Methods 2020年第4期4卷 507-512页

作者： Quan Zhou Fei-Si He Weimin Pan Peng Sha Zhenghui Mi Baiqi Liu Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China University of Chinese Academy of Sciences Beijing 100049China Key Laboratory of Particle Acceleration Physics and Technology Chinese Academy of SciencesBeijing 100049China Center for Superconducting RF and Cryogenics Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China

Background A reliable and repeatable post-processing technology of improving the performance of 1.3 GHz superconducting radio frequency(SRF)cavities is one of the critical technologies for the ILC and XFEL and ERL *** Three 1.3 GHz single-cell cavities were fabricated and received a baking in temperature 330℃,while the interior of the cavity stayed in ultra-high vacuum(UHV).The cavities were also vertical-tested after electropolishing(EP)with 120℃48-h baking and with nitrogen doping separately for a *** The Q_(0) of 1.3 GHz single cavity after medium-temperature baking can be 2-3×10^(10) in the accelerating gradient range of 2-35 MV/m in the 2 K vertical test in ***,the outer surface oxidation of niobium cavity caused by baking will decrease the performance of the SRF *** medium-temperature(250-400℃)baking on the 1.3 GHz single-cell cavity will improve its Q_(0) in 2 K vertical test compared with EP followed by 120℃48-h baking baseline and reach a similar level of nitrogen doping,and the quench field will lower to a typical range of 20-30 MV/***,the cavity performance is sensitive to the baking time and temperature,which indicates that a tremendous improvement can be made on the current treatment.

关键词： medium-temperature baking 1.3 GHz single-cell cavity Nitrogen doping

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