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Journal of Rare Earths 2013年第6期31卷 582-588页

作者：阳建君马文会于洁陈秀华邢洁李蕊 National Engineering Laboratory for Vacuum Metallurgy Faculty of Metallurgical and Energy Engineering Kunming University of Science and Technology Faculty of Environment Science and Engineering Kunming University of Science and Technology Faculty of Physical Science and Technology Yunnan University

La0.9Sr0.1Ga0.8Mg0.2O3–？（LSGM） electrolyte materials were synthesized by the solid state reaction method. The conductivity of LSGM materials was detected by four probe method, and it was 0.08 S/cm at 850 oC. Dense and uniform films of LSGM materials were deposited by the magnetic sputtering on substrates of Si and La0.7Sr0.3Cr0.5Mn0.5O3–？（LSCM）. The experimental results showed that the deposition rates dropped and the average grain sizes of the films enlarged with increase in the substrate temperatures. In the sputtering process, the LSGM film was deposited with preferred growth direction. After annealing, the preferred growth direction disappeared and the film surface became smoother and denser. Through observing the deposition process, deposition mechanism was proposed, which was consistent with a model of island growth.

关键词： solid state reaction magnetic sputtering annealing island growth rare earths

Preparation and characterization of ZnO/Cu/ZnO transparent conductive films

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Rare Metals 2013年第3期32卷 273-277页

作者： Wen-Ying Li Lai-Xin Jiang Gui-Lin Yin Yuan-Yuan Wang Zhen Yu Dan-Nong He College of Materials Science and Engineering Shanghai Jiao Tong University National Engineering Research Center for Nanotechnology

ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.

关键词： ZnO Cu Transparent conductive films magnetic sputtering

Preparation of Nano-Crystalline ZnO Thin Films

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稀有金属材料与工程 2006年第A3期35卷 504-505页

作者： Huapin Chen Guangzhong Xie Tao Wang Yadong Jiang Lin Qiu Ministry of Education Key Laboratory of Novel Transducers School of Opto-electrical Information University of Electronic Science ＆ Technology of China Chengdu 610054 China

Zinc oxide (ZnO) thin films were identified as very suitable piezoelectric material for SAW on the basis of its relatively high electromechanical coupling coefficient,as well as high resistivity for low insertion loss and little distortion in the *** this paper ZnO thin films were deposited on Si(100) substrate covered with SiO_2 using a reactive DC magnetic sputtering system from a zinc *** effects of various deposition parameters on structural and performances have been investigated through *** and experimental results are also discussed in this *** showed that the prepared ZnO films had strongly c-axis *** composition of the film was also determined through high-resolution photoelectron spectroscopy (XPS).AFM showed that the films had smooth surface and that the crystallite sizes of deposited films were in the range 30 nm～50 *** above results showed that the films deposited by magnetic sputtering met the demands for surface acoustic wave (SAW) devices.

关键词： magnetic sputtering ZnO thin films SAW resistivity

Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance

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Transactions of Tianjin University 2010年第5期16卷 348-353页

作者：王秀宇张之圣白天刘仲娥 School of Electronics Information Engineering Tianjin University

High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,*** experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...

关键词： thin film chip resistor high resistance low temperature coefficient of resistance alloy target magnetic sputtering Cr-Si-Ta-Al film

High temperature oxidation behavior of magnetically sputtered Ni-0.5Y micro-crystal coating

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Journal of Southeast University(English Edition) 2003年第4期19卷 364-367页

作者：靳惠明陈荣发张林楠刘晓军扬州大学机械工程学院扬州225009 东北大学材料工程学院沈阳110025

The isothermal and cyclic oxidation behaviors of bulk pure nickel and its magnetically sputtered Ni 0 5Y micro crystal coating were studied at 1?000?℃ in air. Scanning electronic microscopy (SEM) and transmission electronic microscopy (TEM) were used to examine structures of the coating and the NiO oxide films. Laser Raman spectrum was also used to measure the stress level in NiO films formed on bulk nickel and the coating. It was found that Ni 0 5Y micro crystal coating had lower oxidation rate, and the grain size of NiO formed on Ni 0 5Y coating was also relatively smaller than that formed on bulk nickel. Meanwhile, the compressive stress level of oxide film formed on Ni 0 5Y coating was lower than that formed on bulk nickel, and the oxide film’s high temperature plasticity was improved in the coating case. The improvements of anti oxidation properties of the sputtered Ni 0 5Y coating were due to the micro crystal structure and the rare earth element Y.

关键词： magnetic sputtering oxidation Laser Raman yttrium