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Non-ideal effects of mos capacitor in a switched capacitor waveform recorder ASIC

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Chinese Physics C 2016年第7期40卷 111-115页

作者：章洪燕邓智刘以农 Key Laboratory of Particle Radiation & Imaging (Tsinghua University) Ministry of Education Department of Engineering Physics Tsinghua University

SCAs （Switched capacitor Arrays） have a wide range of uses, especially in high energy physics, nuclear science and astrophysics experiments. This paper presents a method of using a mos capacitor as a sampling capacitor to gain larger capacitance with small capacitor area in SCA design. It studies the non-ideal effects of the mos capacitor and comes up with ways to reduce these adverse effects. A prototype SCA ASIC which uses a mos capacitor to store the samples has been designed and tested to verify this method. The SCA integrates 32 channels and each has 64 cells and a readout amplifier. The stored voltage is converted to a pair of differential currents （~ 4 mA max） and multiplexed to the output. All the functionalities have been verified. The power consumption is less than 2 mW/ch. The INL of all the cells in one channel are better than 0.39%. The equivalent input noise of the SCA has been tested to be 2.2 mV with 625 kHz full-scale sine wave as input, sampling at 40 MSPS （Mega-samples per Second） and reading out at 5 MHz. The effective resolution is 8.8 bits considering 1 V dynamic range. The maximum sampling rate reaches up to 50 MSPS and readout rate of 15 MHz to keep noise smaller than 2.5 mV. The test results validate the feasibility of the mos capacitor.

关键词： mos capacitor non-ideal effects waveform recorder switched capacitor array ASIC

Oxidation of silicon surface with atomic oxygen radical anions

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Chinese Physics B 2008年第6期17卷 2197-2203页

作者：王莲宋崇富孙剑秋侯莹李晓光李全新 Department of Chemical Physics University of Science & Technology of China Department of Physics University of Science & Technology of China

The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （mos） capacitors on the O-oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al2sO64]^4＋·4O^- （Cl2A7-O^- for short）. After it has been irradiated by an O- anion bean：（0.5 μA/cm^2） at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy （XPS） results reveal that the oxide layer is of a mixture of SiO2, Si2 O3, and Si2O distributed in different oxidation depths. The features of the mos capacitor of 〈Al electrode/SiOx/Si〉 are investigated by measuring capacitance-voltage （C - V） and current-voltage （I - V） curves. The oxide charge density is about 6.0 × 10^1 cm^-2 derived from the （C - V curves. The leakage current density is in the order of 10^-6 A/cm^2 below 4 MV/cm, obtained from the I - V curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.

关键词： O^- anions silicon oxidation mos capacitor electrical properties

Determination of interface states and their time constant for Au/SnO_2 /n-Si (mos) capacitors using admittance measurements

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Chinese Physics B 2013年第4期22卷 429-433页

作者： H. M. Baran A. Tataroglu Department of Physics Faculty of Arts and Sciences Gazi University

The frequency dependence of admittance measurements （capacitance–voltage （C–V ） and conductance–voltage （G/ω–V ）） of Au/SnO2 /n-Si （mos） capacitors was investigated by taking into account the effects of the interface states （N ss ） and series resistance （Rs ） at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz–1 MHz and （ 5V）–（＋9V）, respectively. The values of N ss and R s were determined by using a conductance method and estimating from the admittance measurements of the mos capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance （G p /ω） versus log（f） curves at various voltages include a peak due to the presence of interface states. It is observed that the N ss and their time constant （τ） range from 1.23 ×10 12 eV-1 ·cm-2 to 1.47 ×10 12 eV-1 ·cm-2 and from 7.29 ×10-5 s to 1.81 ×10-5s, respectively.

关键词： mos capacitor admittance measurements interface states

Modulation of the effective work function of a TiN metal gate for Nmos requisition with Al incorporation

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Journal of Semiconductors 2013年第7期34卷 175-178页

作者：韩锴马雪丽杨红王文武 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（mos） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose.Different thickness ratios of Al to TiN and different post metal annealing（PMA） conditions were employed.Significant shift of work function towards to Si conduction band was observed,which was suitable for Nmos and the magnitude of shift depends on the processing conditions.

关键词： work function modulation Al mos capacitor PMA