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A Practical Backside Technology for Indium Phosphide mmics

Journal of Semiconductors 2001年第12期22卷 1497-1500页

作者：李拂晓杨乃彬南京电子器件研究所南京210016

A wet etching process for backside via holes suitable for use on InP mmics technologies is developed for indium phosphide *** is used to mount InP wafer onto glass *** Ta film is utilized as etch ***+H 3PO 4 solution realised a etch until a depth of 100μ*** is demonstrated that the wet etching backside process is controllable with large latitudes.

关键词： indium phosphide mmics backside process

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维普期刊数据库

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Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

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Journal of Semiconductors 2015年第2期36卷 72-76页

作者：王志明吕昕罗晓斌崔玉兴孙希国默江辉付兴昌李亮何大伟 Beijing Key Laboratory of Millimeter Wave and Terahertz Technology Beijing Institute of Technology National Key Laboratory of Application Specific Integrated Circuit (ASIC) Hebei Semiconductor Research Institute

90-nm T-shaped gate InP-based In_（0.52）Al_（0.48）As/In_（0.6）Ga_（0.4）As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μ***,RF and small-signal model characterizations were *** maximum saturation current density was measured to be 755 mA/mm biased at V_（gs）=0.6 V and V_（ds）=1.5 *** maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_（ds）=—0.1V and V_（ds）=1.5 *** extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,*** inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 *** smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.

关键词： InP PHEMTs InAlAs/InGaAs mmics small-signal modeling

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维普期刊数据库

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Impact of CMOS Scaling on RF/Mixed-Signal Circuit Designs

Impact of CMOS Scaling on RF/Mixed-Signal Circuit Designs

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2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Mau-Chung Frank Chang University of California Los AngelesCA 90095-1594

ISBN: (纸本)1424401607

＜正＞Recent performance advancement in super-scaled CMOS technology has opened a new avenue for the implementation of microwave and millimeter-wave integrated circuits（mmics） and high-speed data converters（ADC and DAC） on low cost and large wafer size silicon *** talk addresses critical issues involved in designing those high performance and mixed-signal integrated circuits under various constraints of the super-scaled CMOS in supply voltage, threshold mismatch,substrate loss,and effective gain *** talk will also discuss potential circuit level solutions in both topology and signaling,that might mitigate those constraints and deliver the required performance and functions in future electronics systems.

关键词： Radio frequency Circuit synthesis CMOS technology Integrated circuit technology Microwave technology Millimeter wave integrated circuits mmics Costs Silicon Performance loss

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A 3.3GHz-Bandwidth RF Broadband LNA with a gain of 29dB

A 3.3GHz-Bandwidth RF Broadband LNA with a gain of 29dB

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2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Shu-jun Kang Lun-cai Liu Yun-xia Ma Zheng-fan Zhang National Laboratory of Analog IC Sichuan Institute of Solid-States Circuits CETC

ISBN: (纸本)1424401607

In this paper,the design on an MMIC broadband low-noise amplifier was briefly described in terms of SiGe process technology,circuit structure and parameter optimization,package parasitic effect and external circuit *** the LNA was processed,the tested results showed the *** bandwidth of amplifier was 3.37GHz,the power gain(S) was 29dB,the reverse isolation(S) was less than or equal to-39dB,the noise figure(NF) was less than or equal to *** the signal frequency was 1.5GHz,P was 9.2dBm,and OIP reached 21.8dBm.

关键词： Radio frequency mmics Low-noise amplifiers Silicon germanium Germanium silicon alloys Isolation technology Design optimization Packaging Circuit testing Bandwidth

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DC-30GHz超宽带放大器单片电路设计

DC-30GHz超宽带放大器单片电路设计

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2019年全国微波毫米波会议

作者：李朗杨杰王磊詹杰谢毅夫电子科技大学

本文基于0.15umGaAs工艺设计了一款DC-30GHz的超宽带分布式放大器。该分布式放大器拥有9级功率放大单元,每个功率单元采用Cascode结构。实测结果表明该放大器在DC-30GHz的频率范围内具有16dB的增益,在10GHz时1dB压缩点输出功率为19dBm,... 详细信息

本文基于0.15umGaAs工艺设计了一款DC-30GHz的超宽带分布式放大器。该分布式放大器拥有9级功率放大单元,每个功率单元采用Cascode结构。实测结果表明该放大器在DC-30GHz的频率范围内具有16dB的增益,在10GHz时1dB压缩点输出功率为19dBm,饱和输出功率23dBm,输入驻波优于1.6,芯片面积3mm×1.2mm。

关键词：超宽带 Cascode结构 mmics

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