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Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode

Journal of Semiconductors 2013年第1期34卷 23-27页

作者： Deepak K.Karan Pranati Panda G. N.Dash School of Physics Sambalpur UniversityJyoti ViharBurlaSambalpur-768 019 (Odisha)India

Noise characteristics of a Read Avalanche diode are analyzed by incorporating the tunneling mechanism of the electron into the avalanche *** expressions are presented for the mean square noise voltage and noise measure in mitatt（mixed tunneling and avalanche transit time） mode operation.A wide band gap semiconductor（4H-SiC） based mitatt diode is considered to study the effect of tunneling on the noise characteristics and negative *** exhibiting enough potential for 4H-SiC to be used as a terahertz source of power in the mitatt mode,our results record a noise measure of 35.18 dB at a frequency of 1.5 THz.

关键词： mitatt 4H-SiC noise

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Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands

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Journal of Semiconductors 2016年第5期37卷 24-29页

作者： Pranati Panda Gananath Dash Electron Devices Group at the School of Physics Sambalpur University

The potential of GaN as a wide band gap semiconductor is explored for application as double drift region mixed tunneling avalanche transit time （mitatt） diodes for operation at 120 GHz, 220 GHz and 0.35 THz using some computer simulation methods developed by our group. The salient features of our results have uncovered some peculiarities of the GaN based mitatt devices. An efficiency of more than 20% right up to a frequency of 0.35 THz （from the GaN mitatt diode） seems highly encouraging but a power output of only 0.76 W is indicative of its dismal fate. The existence of a noise measure minimum at the operating frequency of 0.35 THz is again exhilarating but the value of the minimum is miserably high i.e. more than 33 dB. Thus, although GaN is a wide band gap semiconductor, the disparate carrier velocities prevent its full potential from being exploited for application as MTATT diodes.

关键词： GaN mitatt tunneling carrier velocity

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High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

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World Journal of Nano Science and Engineering 2014年第4期4卷 143-150页

作者： Pranati Panda Satya Narayana Padhi Gana Nath Dash Electron Devices Group School of Physics Sambalpur University Burla India

High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (mitatt) diodes are studied through computer simulation method. It is interesting to observe that the efficiency of SiC (flat) DDR mitatt diode (16%) is more than 4 times that of Si (flat) DDR mitatt diode (3.59%). In addition, a power output of more than 15 times from the SiC mitatt diode compared to the Si mitatt diode is commendable. A reduced noise measure of 17.71 dB from a low-high-low (lo-hi-lo) structure compared to that of 21.5 dB from a flat structure of SiC is indicative of the favourable effect of tunnelling current on the mitatt diode performance.

关键词： mitatt SiC Terahertz Tunnelling

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