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Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask

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Journal of Semiconductors 2010年第11期31卷 127-130页

作者：李永亮徐秋霞 Institute of Microelectronics Chinese Academy of Sciences

The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon（a-Si） hardmask is ***（NH4OH：H2O2：H2O）,which can achieve reasonable etch rates for metal gates and very high selectivity to high-k dielectrics and hardmask materials,is chosen as the TaN etchant. Compared with the photoresist mask and the tetraethyl orthosilicate（TEOS） hardmask,the a-Si hardmask is a better choice to achieve selective removal of TaN on the HfSiON dielectric because it is impervious to the SC1 etchant and can be readily etched with NH4OH solution without attacking the TaN and the HfSiON *** addition,the surface of the HfSiON dielectric is smooth after the wet etching of the TaN metal gate and a-Si hardmask removal,which could prevent device performance ***,the wet etching of TaN with the a-Si hardmask can be applied to dual metal gate integration for the selective removal of the first TaN metal gate deposition.

关键词： TaN wet etching metal gate high k dielectric hardmask integration

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors

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Chinese Physics B 2016年第3期25卷 371-374页

作者：项金娟丁玉强杜立永李俊峰王文武赵超 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Chemical and Material Engineering Jiangnan University Wuxi 214122 China

TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.

关键词： atomic layer deposition metal gate TiAIC reaction mechanism

Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/metal gate stack performance for a gate-last process

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Journal of Semiconductors 2014年第10期35卷 182-186页

作者：张淑祥杨红唐波唐兆云徐烨峰许静闫江 Institute of Microelectronics Chinese Academy of Sciences

ALD HfO2 films fabricated by a novel multi deposition multi annealing （MDMA） technique are inves- tigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing （D＆A）, devices receiving MDMA show a signif- icant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D＆A （while keeping the total annealing time and total dielectrics thickness the same）. Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be re- sponsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme.

关键词： postdeposition annealing scavenging oxygen vacancy equivalent oxide thickness metal gate high-k

Dual-Work-Function Ni-FUSI metal gate for CMOS Technology

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Journal of Semiconductors 2007年第10期28卷 1532-1539页

作者：周华杰徐秋霞中国科学院微电子研究所北京100029

This paper investigates the work function adjustment of a full silicidation （Ni-FUSI） metal gate. It is found that implanting dopant into poly-Si before silicidation can modulate the work function of a Ni-FUSI metal gate efficiently. With the implantation of p-type or n-type dopants,such as BF2 ,As,and P,the work function of a Ni-FUSI metal gate can be made higher or lower to satisfy the requirement of pMOS or nMOS, respectively. But implanting a high dose of As into a poly-Si gate before silicidation will cause the delamination effect and EOT loss,and thus As dopant is not suitable to be used to adjust the work function of a Ni-FUSI metal gate. Due to the EOT reduction in the FUSI Process,the gate leakage current of a FUSI metal gate capacitor is larger than that of a poly-Si gate capacitor.

关键词： metal gate FUSI silicide

Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory metal gate

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Journal of Semiconductors 2005年第4期26卷 651-655页

作者：钟兴华吴峻峰杨建军徐秋霞中国科学院微电子研究所北京100029

Electrical properties of high quality ultra thin nitride/oxynitride(N/O)stack dielectrics pMOS capacitor with refractory metal gate electrode are investigated,and ultra thin (gate dielectrics with significant low leakage current and high resistance to boron penetration are *** results show that the stack gate dielectric of nitride/oxynitride combined with improved sputtered tungsten/titanium nitride (W/TiN) gate electrode is one of the candidates for deep sub-micron metal gate CMOS devices.

关键词： equivalent oxide thickness nitride/oxynitride gate dielectric stack high k boron-penetration metal gate

Flat-band voltage shift in metal-gate/high-k/Si stacks

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Chinese Physics B 2011年第9期20卷 381-391页

作者：黄安平郑晓虎肖志松杨智超王玫朱剑豪杨晓东 Department of Physics Beihang University Department of Physics and Materials Science City University of Hong Kong Department of Electrical and Computer Engineering University of Florida

In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomenon in p-channel metal- oxide-semiconductor （pMOS） devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.

关键词： flat-band voltage shift Vfb roll-off metal gate high-k dielectrics

TaN wet etch for application in dual-metal-gate integration technology

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Journal of Semiconductors 2009年第12期30卷 133-136页

作者：李永亮徐秋霞 Institute of Microelectronics Chinese Academy of Sciences

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

关键词： TaN wet etching metal gate high k dielectric integration

Analysis of flatband voltage shift of metal/high-k/SiO_2/Si stack based on energy band alignment of entire gate stack

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Chinese Physics B 2014年第11期23卷 536-540页

作者：韩锴王晓磊徐永贵杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.

关键词： metal gate high-k dielectric band alignment Vfb shift

Material properties and effective work function of reactive sputtered TaN gate electrodes

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Journal of Semiconductors 2011年第5期32卷 32-35页

作者：张满红霍宗亮王琴刘明 Laboratory of Nanofabrication and Novel Device Integration Institute of MicroelectronicsChinese Academy of Sciences

The resistivity, crystalline structure and effective work function （EWF） of reactive sputtered TaN has been investigated. As-deposited TaN films have an fcc structure. After post-metal annealing （PMA） at 900℃, the TaN films deposited with a N2 flow rate greater than 6.5 sccm keep their fcc structure, while the films deposited with a N2 flow rate lower than 6.25 sccm exhibit a microstructure change. The flatband voltages of gate stacks with TaN films as gate electrodes on SiO2 and HfO2 are also measured. It is concluded that a dipole is formed at the dielectric-TaN interface and its contribution to the EWF of TaN changes with the Ta/N ratio in TaN, the underneath dielectric layer and the PMA conditions.

关键词： metal gate thermal stability effective work function dipole