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Journal of Semiconductors 2011年第7期32卷 28-33页

作者：宋坤柴常春杨银堂贾护军张现军陈斌 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education School of MicroelectronicsXidian University

A novel structure of 4H-SiC mesfets is proposed that focuses on surface trap suppression.Characteristics of the device have been investigated based on physical models for material properties and improved trap models.By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate （BG-FP） structure,it is shown that the proposed structure improves device properties in comprehensive aspects. A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance（C_（gd）） under a large drain voltage.A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less C_（gd） than a conventional FP.For microwave applications,4H-SiC mesfet for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel.For high power applications,the proposed structure is able to endure higher operating voltage as well.The maximum saturation current density of 460 mA/mm is yielded.Also,the gate-lag ratio under a drain voltage of 20 V is close to 90%.In addition,5%and 17.8%improvements in f_T and f_（max） are obtained compared with a BG-FP mesfet in AC simulation,respectively.Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design.

关键词： 4H-SiC mesfet surface trap p-type spacer layer microwave application

X-Band Power Amplifier for Next Generation Networks Based on mesfet

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China Communications 2017年第4期14卷 11-19页

作者： Muhammad Saad Khan Hongxin Zhang Fan Zhang Sulman Shahzad Rahat Ullah Sajid Ali Qasim Ali Arain Manzoor Ahmed School of Electronic Engineering Beijing University of Posts and Telecommunications (BUPT) Beijing 100876 China Beijing Key Laboratory of Work Safety Intelligent Monitoring Beijing University of Posts and Telecommunications Beijing 100876 china College of Information Science and Electrical Engineering Zhejiang University Hangzhou Zhejiang 310027china Electrical Engineering Department University College of Engineering & Technology Bahauddin Zakariya University Multan Pakistan State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing 100876 China Department of Coxnputer Science D.G. Khan Campus. University of Education Lahore Pakistan Future lnternet & Communication Lab (FIB) Department of Electronic Engineering Tsinghua University Beijing 100084 China

Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(mesfet) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get mesfet input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.

关键词： mesfet X-band power amplifier advance design system PAE LTE

A mesfet variable-capacitance analytical model

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Chinese Science Bulletin 1997年第5期42卷 374-377页

作者： Sun, XW Luo, JS Zhou, ZM Cao, JR Lin, JT Department of Electronic Engineering Xi’an Jiaotong University Xi’an China Nanjing Electronic Devices Institute Nanjing China

A GaAs mesfet three-terminal varactor diode fabricated on a semi-insulating substrate can be used for the MMIC active voltage-controlled filter because it is compatible with the standard GaAs MMIC process. The high capacitance ratio needed for wideband tuning filter requires the three-terminal varactor diode (TTVD) to be biased up pinch-off voltage or positive bias. Therefore a variable-capacitance model is applied to analyzing C-V characteristics of this TTVD. The earlier capacitance model for GaAs mesfet did not consider the free carrier move in active region which can cause varying the C-V characteristic, but only depletion layer model approximation. The new model described here takes into account the free carrier move for contributing to gate capacitance. The model analytical results agree well with experiment.

关键词： MMIC GaAs mesfet variable-capacitance model free carrier move.

DESIGN AND PERFORMANCE OF COMPACT LOW NOISE GaAs mesfet AMPLIFIERS FOR UHF OPERATION

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Journal of Electronics(China) 1986年第2期3卷 134-139页

作者：王文骐杨新民陆祝平朱文玉 Shanghai University of Science and Technology Branch Shanghai Institute of Metallurgy Academia Sinica

The design considerations and experimental results of compact low noise GaAs mesfetAmplifiers for UHF operation are described in this paper.The miniaturized and optimized circuitsare obtained by means of special matching network and GAD technique.Both a two-stage unit at 700MHz and a three-stage unit at 1000 MHz are fabricated on a 50×60 mm~2 alumina substrate,andpower gain of 29 dB and 30 dB,,noise figure of 0.8 and 1.2 dB and bandwidth of 40 MHz(3dB)and100 MHz (1dB) are obtained respectively.The satellite direct broadcasting TV receiver fabricatedwith a 700 MHz GaAs mesfet amplifier has clear pictures and good sound.

关键词： mesfet RF DESIGN AND PERFORMANCE OF COMPACT LOW NOISE GaAs mesfet AMPLIFIERS FOR UHF OPERATION GaAs UHF

mesfet肖特基势垒结参数提取及I-V曲线拟合

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固体电子学研究与进展 2002年第3期22卷 329-332,343页

作者：黄云费庆宇中国电子产品可靠性与环境试验研究所广州510610

运用双指数函数模型方法分析了影响 mesfet的 Ti Pt Au-Ga As肖特基势垒结特性的各种因素及各因素间的关系 ,编制了 mesfet肖特基势垒结结参数提取和 I-V曲线拟合软件 ,实现了通过栅源正向 I-V实验数据提取反映肖特基势垒结特性的六个... 详细信息

运用双指数函数模型方法分析了影响 mesfet的 Ti Pt Au-Ga As肖特基势垒结特性的各种因素及各因素间的关系 ,编制了 mesfet肖特基势垒结结参数提取和 I-V曲线拟合软件 ,实现了通过栅源正向 I-V实验数据提取反映肖特基势垒结特性的六个结参数和得到相应结参数下的理论数据 ,与实验数据吻合良好。分析了影响肖特基势垒结 I-V曲线分布的因素 ,提出了进行器件特性、参数稳定性与可靠性研究和定量分析

关键词： mesfet 金属肖特基势垒场效应晶体管参数提取曲线拟合寄生电阻

4H-SiC射频功率mesfet的自热效应分析

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物理学报 2002年第1期51卷 148-152页

作者：杨林安张义门龚仁喜张玉明西安电子科技大学微电子研究所西安710071

采用载流子速度饱和理论 ,建立了包含“自热效应”影响的适用于 4H SiCmesfet的大信号输出I V特性解析模型 ,在模型中引入了温度变化的因素 ,提出了非恒定衬底环境温度T0 的热传导模型 ,模拟结果与实验值一致。

关键词： 4H-SiC 射频 mesfet 直流I-V特性自热效应金属半导体场效应晶体管碳化硅半导体材料

Physical simulations and experimental results of 4H-SiC mesfets on high purity semi-insulating substrates

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Chinese Physics B 2009年第10期18卷 4474-4478页

作者：陈刚柏松李哲洋吴鹏陈征韩平 Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials Department of Physics Nanjing University National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute

In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect transistors （mesfets） on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H-SiC mesfets with 100 #m gate periphery. At 30 V drain voltage, the maximum current density is 440 mA/mm and the maximum transconductance is 33 mS/mm. For the continuous wave （CW） at a frequency of 2 GHz, the maximum output power density is measured to be 6.6 W/mm, with a gain of 12 dB and power-added efficiency of 33.7%. The cut-off frequency （fT） and the maximum frequency （fmax） are 9 GHz and 24.9 GHz respectively. The simulation results of fT and fmax are 11.4 GHz and 38.6 GHz respectively.

关键词： 4H-SiC mesfet simulation microwave

Electrothermal simulation of the self-heating effects in 4H-SiC mesfets

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Chinese Physics B 2008年第4期17卷 1410-1414页

作者：吕红亮张义门张玉明车勇 Microelectronics Institute Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of EducationXidian University Engineering College of Armed Police Force

A thermal model of 4H-SiC mesfet is developed based on the temperature dependences of material parameters and three-region I - V model. The static current characteristics of 4H-SiC mesfet have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physicalbased simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.

关键词： 4H-SiC mesfet self-heating analytic model

微波功率GaAs mesfet本征元件与偏置关系分析

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固体电子学研究与进展 2002年第1期22卷 38-44页

作者：顾聪刘佑宝高一凡西安微电子技术研究所 710054 长安大学西安710064

提出了一种分析和了解微波功率 Ga As mesfet非线性效应的方法。主要是采用解析优化方法 ,提取 mesfet器件在不同偏置点下的本征元件 ,并结合器件的应用类型 ,对本征元件与偏置的关系进行了系统化的分析。分析的结论有助于提高微波功率 ... 详细信息

提出了一种分析和了解微波功率 Ga As mesfet非线性效应的方法。主要是采用解析优化方法 ,提取 mesfet器件在不同偏置点下的本征元件 ,并结合器件的应用类型 ,对本征元件与偏置的关系进行了系统化的分析。分析的结论有助于提高微波功率 Ga As

关键词：微波功率器件本征元件非线性模型砷化镓 mesfet 偏置关系

Numerical Simulation of 4H-SiC Metal Semiconductor Field Transistors

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Chinese Physics Letters 2011年第7期28卷 316-318页

作者： Kuang-Po HSUEH Shih-Tzung SU Jun ZENG Department of Electronics Engineering Vanung UniversityChung-Li 32061TaiwanChina R&D Department InPowerSemiconductor Corp.LtdHong KongChina

This work simulates the performance of 4H-SiC mesfets and establishes the optimum device structure for dc and rf applications that operate at high voltages.Devices with various channel doping,buffer layer doping,recess thickness,gate-to-drain spacing and temperatures of operation are considered.The simulation results reveal that a p-type buffer layer of 5×10^(15) cm^(−3) and a channel layer of 1×10^(17) cm^(−3 )yield favorable results.The cut-off frequency is 22.53 GHz,the maximum transconductance is 50.55 mS/mm,the drain saturation current is 239.76 mA/mm and the breakdown voltage is 70.40 V.The breakdown voltages increase to 90.2 V as the gate-to-drain spacing increases to 1µm.Based on these simulation results,new 4H-SiC mesfet designs can be calibrated.

关键词： drain breakdown mesfet