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Recycled low-temperature direct bonding of Si/glass and glass/glass chips for detachable micro/nanofluidic devices

Journal of Materials Science & Technology 2020年第11期42卷 156-167页

作者： Chenxi Wang Hui Fang Shicheng Zhou Xiaoyun Qi Fanfan Niu Wei Zhang Yanhong Tian Tadatomo Suga State Key Laboratory of Advanced Welding and Joining Harbin Institute of TechnologyHarbin J50001China School of Mechanical and Electrical Engineering Guilin University of Electronic TechnologyCuilin 541004China Collaborative Research Center Meisei UniversityTokyo 191-8506Japan Department of Precision Engineering School of EngineeringThe University of TokyoBunkyoTokyo 113-8656Japan

Silicon and glass are two of the most ideal materials for micro/nanofluidic devices,which have been widely used for research in multidisciplinary ***,many micro/nanofluidic devices enable only single use due to the irreversible bonding between Si/glass or glass/glass *** the silicon-and glass-based devices are fabricated to be detachable,the substrates can be reused and bonded again without repeating expensive micro/nanofabrication ***,we present a recycled direct bonding method for Si/glass and glass/glass chips based on oxygen plasma activation and low-temperature annealing *** bonding strength and void-free bonding interface are obtained after annealing at 150℃.The surfaces and the bonding interfaces are characterized to elucidate the bonding ***,immersion tests are carried out to investigate the interfacial corrosion resistance in various chemical and biological solutions as well as explore a detachable *** bonding strengths are controlled to meet the demand for micro/nanofluidic devices and the bonding interfaces can be separated in *** a result,we succeed in the experiment of bonding and detaching of glass substrates without fracturing,which is repeated for three times.

关键词： low-temperature bonding Plasma activation Interface Corrosion Detachable

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Mechanism of Wafer bonding Process

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Semiconductor Photonics and Technology 2000年第3期6卷 169-173页

作者： HANWei－hua YUJim－zhong 等 StateKeyLat.onItegratedOptoelectronics InstituteofSemiconductorChineseAcademyofSciencesBeijing10008

The basic force and bonding energy in wafer bonding have been revealed in this study. The basic cause for bonding contributes to the interatomic attractive forces between surfaces or the reduction of surface energies. The amplitude of roughness component can not exceed the criterion if wafer pair is bondable. The bonding behavior and challenge during annealing have been investigated.

关键词： Wafer bonding process Bondability criterion low-temperature bonding

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low temperature Wafer Level Hermetic Package with Benzo-cyclo-butene Material

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Semiconductor Photonics and Technology 2006年第1期12卷 39-42页

作者： LIU Yu-fei LIU Wen-ping LI Si-hua WU Ya-ming LUO Le State Key Laboratory of Transducer Technology and National Key Laboratory of Microsystem Technology Shanghai Institute of Microsystem and Information Technology CASs Shanghai 200050 CHN Graduate School of Chinese Academy of Sciences Beijing 100039 CHN

The wafer level hermetic package method was studied experimentally in low temperature for optoelectronic devices with benzo-cyclo-butene(BCB) material. The results show that the bonding temperature is below 250℃, the helium hermetic capability of both silicon-BCB-silicon and silicon-BCB-glass package are better than 6×10~ -4 Pa·cm^3/s. The shear strength is enough for package. The hermeticity is still good after the 15 cycles’ thermal shock test. The relationship between the leakage rate and the distance from the hole to the device border were also discussed with a seepage model.

关键词： low-temperature bonding Hermetic package Benzo-eyclo-butene(BCB) Seepage model

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