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An artificial synapse by superlattice-like phase-change material for low-power brain-inspired computing

Chinese Physics B 2020年第7期29卷 49-54页

作者： Qing Hu Boyi Dong Lun Wang Enming Huang Hao Tong Yuhui He Ming Xu Xiangshui Miao Wuhan National Laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan 430074China

Phase-change material(PCM)is generating widespread interest as a new candidate for artificial synapses in bioinspired computer ***,the amorphization process of PCM devices tends to be abrupt,unlike continuous synaptic *** relatively large power consumption and poor analog behavior of PCM devices greatly limit their ***,we fabricate a GeTe/Sb2Te3 superlattice-like PCM device which allows a progressive RESET *** devices feature low-power consumption operation and potential high-density integration,which can effectively simulate biological synaptic *** programming energy can be further reduced by properly selecting the resistance range and operating *** fabricated devices are implemented in both artificial neural networks(ANN)and convolutional neural network(CNN)simulations,demonstrating high accuracy in brain-like pattern recognition.

关键词： superlattice-like phase-change material artificial synapse low-power consumption

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low-power emerging memristive designs towards secure hardware systems for applications in internet of things

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Nano Materials Science 2021年第2期3卷 186-204页

作者： Nan Du Heidemarie Schmidt Ilia Polian Department Nano Device Technology Fraunhofer Institute for Electronic Nano SystemsTechnologie-Campus 309126ChemnitzGermany Faculty of Electrical Engineering and Information Technology Chemnitz University of Technology(TU Chemnitz)Straße der Nationen 6209126ChemnitzGermany Department of Quantum Detection Leibniz Institute of Photonic Technology(IPHT)Albert-Einstein-Str.907745JenaGermany Institute for Solid State Physics Friedrich Schiller University JenaFürstengraben 107743JenaGermany Institute of Computer Engineering and Computer Architecture(ITI) University of StuttgartPfaffenwaldring 4770569StuttgartGermany

Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are *** reviewing the state-of-the-art in three highlighted memristive application areas,*** non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,*** the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their *** review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.

关键词： Memristive technology Nanoelectronic device low-power consumption Miniaturization Nonvolatility Reconfigurability In memory computing Artificial intelligence Hardware security primitives Machine learning-related attacks and defenses

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Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

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Chinese Physics B 2016年第10期25卷 368-372页

作者：苏帅鉴肖川王芳韩叶梅田雨仙王晓旸张宏智张楷亮 School of Electronics Information Engineering Tianjin Key Laboratory of Film Electronic & Communication DevicesTianjin University of Technology

In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity *** reset current is reduced for the HfO/BN bilayer device compared with that for the Ta/HfO/TiN ***,the reset current decreases with increasing BN *** HfOlayer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN *** current conduction mechanism of low resistance state in the HfO/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfOdevice.

关键词： resistive random access memory(RRAM) low-power consumption uniformity HfO_x

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