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Reanalysis of energy band structure in the type-II quantum wells

Chinese Physics B 2024年第6期33卷 75-78页

作者：李欣欣邓震江洋杜春花贾海强王文新陈弘 Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China Center of Materials and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Yangtze River Delta Physics Research Center Liyang 213000China Songshan Lake Materials Laboratory Dongguan 523808China

Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

关键词： energy band structure type-II quantum wells low-dimensional semiconductors

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Waveguide-coupled deterministic quantum light sources and post-growth engineering methods for integrated quantum photonics

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Chip 2022年第3期1卷 28-49页

作者： Xu-Dong Wang Yi-Fan Zhu Ting-Ting Jin Wei-Wen Ou Xin Ou Jia-Xiang Zhang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200092China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Integrated photonic quantum circuits(IPQCs)have attracted increasing attention in recent years due to their widespread applications in quantum information *** the most envisioned quantum technologies such as quantum communications,quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light *** introducing sizeconfined nanostructures or crystal imperfections,low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources(SPSs).Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms,including molecules,quantum dots,color centers and two-dimensional *** the rapid development of the chip-scale generation of single photons with deterministic quantum emitters,the field of IPQCs has raised new challenges and *** this paper,we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs,and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled *** prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.

关键词： Single photon sources On-chip Integrated circuits Post-growth engineering low-dimensional semiconductors

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Comment on“Chemical vapor deposition synthesis and Raman scattering investigation of quasi-one-dimensional ZrS_(3) nanoflakes”

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Nano Research 2024年第9期17卷 8647-8648页

作者： Archit Dhingra Instituto Madrileño de Estudios Avanzados IMDEA NanocienciaCalle Faraday 928049 MadridSpain

A fundamentally crucial suggestion to rectify the fits to the high-resolution X-ray photoemission spectroscopy(XPS)raw data for the S 2p core level published by Chen et al.(Nano Res.2023,16,10567-10572)is presented he... 详细信息

关键词： quasi-one-dimensional materials low-dimensional semiconductors transition metal trichalcogenides X-ray photoemission spectroscopy ZrS3 nanoflakes

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