检索结果-南通市图书馆

low resistive TiO2Deposition by LPCVD Using TTIP and NbF5in Hydrogen-Ambient

Journal of Crystallization Process and Technology 2015年第1期5卷 15-23页

作者： Satoshi Yamauchi Kazuhiro Ishibashi Sakura Hatakeyama Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan

low resistive TiO2 layer was deposited by low pressure chemical vapor deposition (LPCVD) at pressure around 0.25 Pa using titanium-tetra-iso-propoxide (TTIP) and NbF5 in H2-ambient. Acti-vation energy for the deposition rate on the temperature was significantly decreased to 120 kJ/mol as compared with 228 kJ/mol for the deposition in H2 without NbF5. The deposition rate linearly increased with NbF5 supply rate but gradually decreased with H2 supply rate indicated that F on the deposition surface acts as catalyst for TTIP-dissociation but is non-activated by hydrogen. Resistivity of the layer was decreased by NbF5 supply depending on the deposition temperature with the activation energy of 319 kJ/mol, whereas the energy was 244 kJ/mol for the layer deposited in H2 without NbF5. The dependence of resistivity on NbF5. and H2 supply rates suggested that the doping should be performed by sufficient NbF5 and H2 supply rate to improve the crystallinity. As a result of the optimization, the resistivity was successfully reduced to 5 × 10-2 Ω·cm. Optical transmission spectra in UV-Vis region indicated that significant absorption observed for the layer deposited in H2 was notably decreased by using NbF5. The improved optical property was better than that for the layer deposited in O2-ambient.

关键词： LPCVD-TiO2 H2-Ambient Nb and F Doping low-resistive TiO2 Optical Transmittance

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

low Pressure Chemical Vapor Deposition of Nb and F Co-Doped TiO2Layer

引用

Journal of Crystallization Process and Technology 2014年第2期4卷 79-88页

作者： Satoshi Yamauchi Shouta Saiki Kazuhiro Ishibashi Akie Nakagawa Sakura Hatakeyama Department of Biomolecular Functional Engineering Ibaraki University Hitachi Japan

Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant respectively. Resistivity beyond 100 Ωcm for undoped layer was decreased with increasing supply of the dopant and dependent on the supply ratio of O2 to TTIP and decreased to 0.2 Ωcm by the optimization. X-ray fluorescent spectroscopy showed Nb-content in the layer was decreased with the O2-supply ratio. X-ray photo-spectroscopy indicated that F substituted O-site in TiO2 by O2-supply but carbon-contamination and F missing substitution in the O-site were significantly increased by excess O2-supply. Further, it was suggested that the substituted F played an important role to reduce resistivity without significant contribution of O-vacancies. XRD spectra showed F missing substitution in the O-site degraded the crystallinity.

关键词： LPCVD Anatase-TiO2 Nb and F Co-Doping low-resistive TiO2

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：