检索结果-南通市图书馆

维普期刊数据库

Friction anisotropy dependence on lattice orientation of graphene

在线全文

学校读者我要写书评

暂无评论

Science China(Physics,Mechanics & Astronomy) 2014年第4期57卷 663-667页

作者： ZHANG Yu LIU LianQing XI Ning WANG YueChao DONG ZaiLi WEJINYA Uchechukwu C State Key Laboratory of Robotics Shenyang Institute of Automation Chinese Academy of Sciences University of Chinese Academy of Sciences Department of Mechanical and Biomedical Engineering City University of HongKong Department of Mechanical Engineering University of ArkansasFayetteville Arkansas 72701 USA

The observation of friction anisotropy on graphene by friction measurement at atomic scale has been reported in this ***-scale friction measurement revealed friction anisotropy with a periodicity of 60°,which is consistent with the hexagonal periodicity of the *** experiments and theory show that the value of the friction force is related to the graphene lattice orientation,and the friction force along armchair orientation is also larger than the one along zigzag *** results will play a critical role in the use of graphene to manufacture nanoscale devices.

关键词： graphene friction anisotropic lattice orientation

维普期刊数据库

Optimal migration route of Cu in HfO_2

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2014年第1期35卷 7-11页

作者：卢金龙罗京赵宏鹏杨金蒋先伟刘琦李晓风代月花 Institute of Electronic and Information Engineering Anhui University Laboratory of Nano-Fabrication and Novel Device Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Internet Network Information Center Hefei Institutes of Physical ScienceChinese Academy of Sciences

The movement of Cu in a HfO2-based resistive random access memory （RRAM） device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfOz growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2 material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.

关键词： HfO2 RRAM Cu migration lattice orientation migration speed

The conductive path in HfO_2:first principles study

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Semiconductors 2012年第7期33卷 7-10页

作者：周茂秀赵强张伟刘琦代月花 Institute of Electronic and Information Project Anhui University Laboratory of Nano-Fabrication and Novel Device Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The conductive path formed by the interstitial Ag or substitutional Ag in Hf02 was investigated by using the Vienna ab initio simulation package based on the DFT theory. The calculated results indicated that the ordering of interstitial Ag ions at special positions can form a conductive path, and it cannot form at other *** orientation dependence of this conductive path was then investigated. Various types of super cells are also built to study the rupture of the path, which corresponds to some possible ＂off＂ states.

关键词： resistance switching mechanism DFT conductive path lattice orientation

维普期刊数据库

Optimal migration route of Cu in HfO

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2014年第1期 11-15页

The movement of Cu in a HfO2-based resistive random access memory(RRAM) device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfO2growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.

关键词： HfO2 RRAM Cu migration lattice orientation migration speed