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An improved temperature-dependent large signal model of microwave GaN HEMTs

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Journal of Semiconductors 2016年第7期37卷 68-75页

作者：汪昌思徐跃杭闻彰陈志凯徐锐敏 EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China

Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability de- sign and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. The results show that better performance can be achieved by using the proposed large signal model in the range of-55 to 125℃ compared with the conventional model with a linear thermal sub-circuit.

关键词： GaN HEMTs large signal model thermal resistance

large signal Statistical model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors

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Chinese Journal of Electronics 2017年第6期26卷 1319-1324页

作者： YU Xuming XU Yuehang WEN Zhang CHEN Zhikai HONG Wei State Key Laboratory of Millimeter Wave Southeast Univeristy School of Electronic Engineering University of Electronic Science and Technology of China

Efficient parameter extraction method is essential to establish large signal statistical model. This paper presents an automatic parameter extraction method of I-V model for Gallium nitride(GaN) High electron mobility transistors(HEMTs) large signal statistical model. To accurate modeling the statistical characterization, all of 53 parameters in an I-V model are considered. In order to realize automatic parameter extraction, the model parameters are divided into blocks according to their physical meaning to reduce the complexity of the I-V model. Different parameter blocks are extracted separately by fitting the pulsed I-V transfer characteristic curves of the device at different quiescent bias points. A large signal statistical model for 0.25μm GaN HEMTs process has been established by using the proposed method after measuring 34 GaN HEMTs from 10 batches. The results show that the large-signal performances(Output power and Power added efficiency) can be reproduced with high accuracy by the proposed statistical model.

关键词： Statistical model Parameter extraction GaN HEMTs large signal model

large-signal modeling method for power FETs and diodes

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Journal of Semiconductors 2009年第6期30卷 57-60页

作者：孙璐王家礼王珊李雪铮石慧王娜郭生平 School of Electromechanical Engineering Xidian University

Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor *** extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

关键词： large signal model extraction method nonlinear scattering function semiconductor devices

Advanced SPICE-modeling of 4H-SiC MESFETs

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Journal of Electronic Science and Technology of China 2007年第1期5卷 62-65页

作者：徐跃杭徐锐敏延波王磊 School of Electronic Engineering University of Electronic Science and Technology of China

A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.

关键词： 4H-SiC MESFET large signal model simulation program with integratedcircuit emphasis (SPICE)