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ion compaction effect in hollow FePt nanochains with ultrathin shell under low energy ion irradiation

Nano Research 2022年第10期15卷 9309-9318页

作者： Jialong Liu Jianguo Wu Long Cheng Suyun Niu Zhiqiang Wang Mengyuan Zhu Jingyan Zhang Shouguo Wang Wei Wang School of Mathematics and Physics Beijing University of Chemical TechnologyBeijing 100029China Key Laboratory of Shale Gas and Engineering Institute of Geology and GeophysicsChinese Academy of SciencesBeijing 100029China Innovation Academy for Earth Science Chinese Academy of SciencesBeijing 100029China School of Physics Beihang UniversityBeijing 100029China Beijing Hangxing Machinery Manufacturing Co. Ltd.Beijing 100013China Beijing Smart-chip Microelectronics Technology Co. Ltd.Beijing 100192China Beijing Advanced Innovation Center for Materials Genome Engineering School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China

The morphology manipulation of nanomaterials by ion irradiation builds a way to precisely control physicochemical properties.Under the continuous irradiation of low energy Ga+,Ne+,and He+ions,an ion compaction effect has been found in hollow FePt nanochains with ultrathin shell that the volumes of the nanochains are gradually compacted by ions.The deep learning algorithm has been successfully applied to automatically and precisely measure average sizes of spheres in hollow FePt nanochains.The compaction under ion irradiation is very fast in the very early period and then proceeds to a slow region.The compaction rates in both regions are linearly fitted and all the values are in the order of 10^(–17) to 10^(–14) cm^(2)/ion.ion species and ion current have effect on the compaction rate.For example,the compaction rate of Ga+ions is larger than those of Ne+and He+ions under an identical current,while irradiation with larger current can compact nanochains faster.The ion compaction effect originates from the local shear deformation caused by the interaction between incident ions and the electrons of Fe and Pt atoms in the ultrathin shell.With continuous irradiation,the crystalline clusters of FePt nanchains firstly grow larger and then become amorphous.The ion compaction effect can be applied to tune the size and crystal structure of hollow structures with a precise rate by choosing appropriate ion species and current.

关键词： ion compaction effect hollow structure ion irradiation FePt

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Deuterium distribution and behavior of blisters in pre-damaged and undamaged tungsten

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Tungsten 2024年第3期6卷 647-656页

作者： Cong Li Xiao-Wa Wang Ran-Ran Su Xuan-Xin Hu Shu-Guang Wei Han-Jun Tu Li-Qun Shi Hong-Liang Zhang Key Laboratory of Nuclear Physics and ion-Beam Application Institute of Modern Physics Fudan University School of Mechanical Engineering Shanghai Jiao Tong University Department of Materials Science and Engineering University of Wisconsin

Tungsten(W),as a plasma-facing material,is subjected to high fluence plasma,resulting in both radiation damage and deuterium(D) retention.This study explores the blistering behavior and D supersaturated layers in both pre-damaged and undamaged W samples.To achieve a uniform damage profile similar to neutron irradiation,carbon(C) ions with multiple energies and angles were employed.The samples were further irradiated with low-energy D ions under two fluences at temperatures from ～380 to 640 K.Using various experimental techniques,we found that pre-damaged W samples can effectively suppress the formation of blistering and lower the threshold temperature at which the surface remains free of blistering.We also observed the prominent D supersaturated peaks within the depth of 20 nm in both pre-damaged and undamaged W.Furthermore,a close correlation between blistering and the D supersaturation was investigated.The results suggest that neutron irradiation in the fusion reactors could increase the critical D concentration for blistering,while a greater depth of damage facilitated the inward diffusion of D,thereby reducing the D concentration gradient and alleviating surface blistering.

关键词： Tungsten Deuterium Supersaturated layer Blister ion irradiation Pre-damage

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Surface structure modification of ReSe2 nanosheets via carbon ion irradiation

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Chinese Physics B 2023年第2期32卷 385-390页

作者：乔梅王铁军刘泳刘涛刘珊许士才 College of Physics and Electronic Information Shandong Key Laboratory of Biophysics Dezhou UniversityDezhou 253023China School of Physics State Key Laboratory of Crystal Materials and Key Laboratory of Particle and Particle Irradiation (MOE)Shandong UniversityJinan250100China School of Electronic and Information Qingdao UniversityQingdao 266071China

The effects of C ion irradiation on multilayer ReSe2flakes are studied by utilizing different kinds of technologies. The domain sizes, thickness, morphologies of the multilayer ReSe2flakes on the Al2O3substrates before and after 1.0-MeV C ion irradiation with different fluence rates are studied by atomic force microscope and scanning electron microscopy. The atomic vibrational spectra of multilayer ReSe2flakes are detected by micro-Raman spectra. The redshifts of the Raman modes after 1.0-MeV C ion irradiation are observed from the micro-Raman spectra. The elemental compositions and bonding configurations of the multilayer ReSe2samples before and after irradiation processes are characterized by x-ray photoelectron spectroscopy. The structural properties are also investigated by x-ray diffraction, and it is concluded that after 1.0-MeV C ion irradiation process, multilayer ReSe2samples continue to grow on Al2O3substrates, the increase of crystallite size also reveals that the crystallinity is improved with the increase of the layer number after 1.0-MeV C ion irradiation.

关键词： ion irradiation microstructure crystallinity surface morphology

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Effect of Ni^(7+) ion irradiation on Structure and Ammonia Sensing Properties of Thermally Oxidized Zinc and Indium Films

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Journal of Materials Science & Technology 2012年第8期28卷 700-706页

作者： Amandeep Kaur Bal Rajinder Singh R.K.Bedi Material Science Laboratory Department of PhysicsGuru Nanak Dev University

ZnO and In203 films were prepared by thermal oxidation of vacuum deposited zinc and indium films, respec- tively onto the glass substrate at 30 ℃. The fabricated films have been irradiated with 100-MeV Ni7＋ ions at different fluences ranging from 5×1011 to 5×1013 ions/cm2. The structural and gas sensing properties of pristine and irradiated films have been discussed. X-ray diffraction （XRD） pattern of pristine and irradiated films reveal that the films are polycrystalline in nature and crystallinity increases after irradiation. In this study, highly porous In203 nanorods evolved when being irradiated at a fluence of 5×1013 ions/cm2 while ZnO film shows decrease in number of nanowires. The ammonia sensing performance of the Ni^7＋ irradiated In203 films shows an improvement as compared to its pristine counterpart.

关键词： Thermal oxidation ZnO film In203 film ion irradiation Gas sensing

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Modulating properties by light ion irradiation:From novel functional materials to semiconductor power devices

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Journal of Semiconductors 2022年第6期43卷 66-77页

作者： Ye Yuan Shengqiang Zhou Xinqiang Wang Songshan Lake Materials Laboratory Dongguan 523808China Institute of ion Beam Physics and Material Research Helmholtz-Zentrum Dresden-RossendorfDresden 01328Germany Dongguan Institute of Optoelectronics Peking UniversityDongguan 523808China

In this review,the application of light ion irradiation is discussed for tailoring novel functional materials and for improving the performance in SiC or Si based electrical power devices.The deep traps and electronic disorder produced by light ion irradiation can modify the electrical,magnetic,and optical properties of films(e.g.,dilute ferromagnetic semiconductors and topological materials).Additionally,benefiting from the high reproducibility,precise manipulation of functional depth and density of defects,as well as the flexible patternability,the helium or proton ion irradiation has been successfully employed in improving the dynamic performance of SiC and Si based PiN diode power devices by reducing their majority carrier lifetime,although the static performance is sacrificed due to deep level traps.Such a trade-off has been regarded as the key point to compromise the static and dynamic performances of power devices.As a result,herein the light ion irradiation is highlighted in both exploring new physics and optimizing the performance in functional materials and electrical devices.

关键词： ion irradiation power device crystal thin film functional materials

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Modification of Optical Band-Gap of Si Films After ion irradiation

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Plasma Science and Technology 2012年第7期14卷 632-635页

作者：朱亚滨王志光孙建荣姚存峰魏孔芳缑洁马艺准申铁龙庞立龙盛彦斌 Institute of Modern Physics Chinese Academy of Sciences Graduate university of Chinese Academy of Sciences

Amorphous silicon （a-Si）, nanocrystalline silicon （nc-Si） and hydrogenated nanocrys- talline silicon （nc-Si：H） films were fabricated by using chemical vapor deposition （CVD） system. The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0 × 10^11 ions/cm2, 1.0 × 10^12 ions/cm^2 and 1.0 × 10^13 ions/era2 at room temperature （RT）. The nc-Si：H films were irradiated with 9 MeV Xe-ions at 1.0 ×10^12 Xe/cm^2, 1.0 × 10^13 Xe/cm2 and 1.0×10^14 Xe/cm2 at RT. For comparison, mono-crystalline silicon （c-Si） samples were also irradiated at RT with 94 MeV Xe-ions. All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer. Variations of the optical band-gap （Eg） and grain size （D） versus the irradiation fluence were investigated systematically. The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation. Possible mechanism underlying the modification of silicon thin films was briefly discussed.

关键词： ion irradiation silicon film optical band-gap grain size

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Influence of Ga^+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

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Chinese Physics B 2010年第3期19卷 533-538页

作者：祁先进王寅岗缪雪飞李子全黄一中 College of Materials Science and Technology Nanjing University of Aeronautics and Astronautics Department of Materials Oxford UniversityOxford OX1 3PHUK School of Materials Science and Engineering Nanyang Technological UniversitySingapore

Ga^＋ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance （MR） are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10^13 ions/cm^2 and the step disappears afterwards. Two oeaks in the R-H curve are found to be asymmetric.

关键词： ion irradiation magnetisation reversal magnetoresistance exchange bias

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Influence of Ga^+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

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Chinese Physics B 2011年第5期20卷 388-392页

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

关键词： thermal relaxation exchange bias ion irradiation energy barrier

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Coupling effects of stress and ion irradiation on the mechanical behaviors of copper nanowires

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Science China(Physics,Mechanics & Astronomy) 2013年第3期56卷 498-505页

作者： YANG ZhenYu JIAO FeiFe LU ZiXing WANG ZhiQiao School of Aeronautic Science and Engineering BeiHang University School of Engineering and Technology China University of Geosciences

By using molecular dynamics simulations,we studied the ion irradiation induced damage in mechanically strained Cu nanowires and evaluated the effects of damage on the mechanical properties of nanowires.The stresses in the pre-strained nanowires can be released significantly by the dislocation emission from the cascade core when the strain is greater than 1%.In addition,comparison of the stress-strain relationships between the defect-free nanowire and the irradiated ones indicates that ion irradiation reduces the yield strength of the Cu nanowires,and both the yield stress and strain decrease with the increase of irradiation energy.The results are consistent with the microscopic mechanism of damage production by ion irradiation and provide quantitative information required for accessing the stability of nanomaterials subjected to mechanical loading and irradiation coupling effects.

关键词： ion irradiation nanowires molecular dynamics vacancy dislocation

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CRYSTALLIZATion　OF　Fe₃₈Ni₃₉Si₁₀B₁₃　METALLIC　GLASS　UNDER　HELIUM　ion　irradiation

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Acta Metallurgica Sinica(English Letters) 1995年第3期8卷 204-208页

作者： YANG Qifa (China Institute of Atomic Energy, Beijing)ZHANG Guoguang SHEN Wanshui (University of Science and Technology Beijing)

he crystallization features of Fe38Hi39Si10B13 metallic glass under 100 keV and 6μA/cm2 helium ion irradiation with different doses are reported. It is found that the Fe38 Ni39Si10 B13 metallic glass crystallized under the helium ion irradiation at the temperature lower than the ordinary thermal crystallization temperature. The preferential precipitation phase is FeSi, and followed by the eutectic phase α-Fe. The critical dose for the formation of helium bubbles in the material is around 5x10￣16/cm2. The sensitivity of crystallization due to the temperature rising under helium ion irradiation and the mechanism of the sequence of precipitated phase are briefly discussed.

关键词： Fe38Ni39Si10B13 metallic glass crystallization helium ion irradiation

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