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Layered metal carbo-selenide Nb2CSe2 with van der Waals interlayer coupling

JOURNAL OF ADVANCED CERAMICS 2025年第1期14卷 101-110页

作者： Wang, Junchao Cheng, Renfei Hu, Tao Tang, Xinyue Liang, Yan Tian, Min Xiong, Ting Lu, Qiuhong Zhu, Qi Yang, Zhiqing Wang, Xiaohui Zhou, Yanchun Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China Univ Sci & Technol China Sch Mat Sci & Engn Shenyang 110016 Peoples R China Suzhou Univ Sci & Technol Inst Mat Sci & Devices Sch Mat Sci & Engn Suzhou 215009 Peoples R China Shenyang Ligong Univ Sch Mat Sci & Engn Shenyang 110159 Peoples R China Ji Hua Lab Foshan 528000 Peoples R China Northeastern Univ Sch Mat Sci & Engn Key Lab Anisotropy & Texture Mat Minist Educ Shenyang 110819 Peoples R China Zhengzhou Univ Sch Mat Sci & Engn Zhengzhou 450001 Peoples R China

The stacking structure of Nb2CSe2, a newly synthesized layered metal carbo-selenide, was elucidated by scanning transmission electron microscopy. Nb2CSe2 features Se-Nb-C-Nb-Se quintuple atomic layers. These layers are stacked in Bernal mode. In this mode, Nb2CSe2 crystallizes in a trigonal symmetry (space group P 3 m 1, No. 164), with lattice parameters of a = 3.33 & Aring;and c = 18.20 & Aring;. Electronic structure calculations indicate that the metal carbo-selenide has Fermi energy crossing the bands where it touches to give a zero gap, indicating that it is an electronic conductor. As evidenced experimentally, the electrical conductivity is as high as 6.6x105 Sm-1, outperforming the counterparts in the MXene family. Owing to the layered structure, the bonding in Nb2CSe2 with an ionic formula of (Nb 1.48+ ) 2 (C 1.74- )(Se 0.61- ) 2 is highly anisotropic, with metallic-covalent-ionic bonding in intralayers and weak bonding between interlayers. The layered nature is further evidenced by elastic properties, interlayer energy, and friction coefficient determination. These characteristics indicate that Nb2CSe2 is an analog of molybdenum disulfide (MoS2), which is a typical binary van der Waals (vdW) solid. Moreover, vibrational properties are reported, which may offer an optical identification standard for new ternary vdW solids in spectroscopic studies, including Raman scattering and infrared absorption.

关键词： MXene Nb2CSe2 crystal structure electronic structure elastic properties interlayer coupling Raman spectroscopy friction coefficient

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interlayer coupling AND FERROMAGNETIC RESONANCE IN Fe-Si/Cr MULTILAYERS

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Acta Metallurgica Sinica(English Letters) 1996年第4期9卷 283-286页

作者： S.S.Yan: YH Liu: X.D Ma,YM. Zhang and L.M Mei(Department of physics, shandong University, Jinan 250100, China )

Fe-Si/Cr multilayers with amorphous Fe-Si magnetic layers and Cr nonmagnetic layers were prepared by an rf-sputtering *** the thickness of the Cr layers varies from 0.5 to 6 nm, the interlayer coupling oscillates periodically from ferromagnetic to antiferromagnetism. For each sample only one wide uniform resonance peak is detected by the ferromagnetic resonance. The uniform resonance field Hb and the resonance line width △H_b oscillate periodically as the thickness of the Cr layers increases, which is related to the oscillation of the interlayer coupling from ferromagnetic to *** oscillation period is about 1.5nm.

关键词： multilayer interlayer coupling ferromagnetic resonance

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Evidence for interlayer coupling and moiréexcitons in twisted WS_(2)/WS_(2)homostructure superlattices

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Nano Research 2023年第2期16卷 3429-3434页

作者： Haihong Zheng Biao Wu Shaofei Li Jun He Keqiu Chen Zongwen Liu Yanping Liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South UniversityChangsha 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South UniversityChangsha 410083China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Chemical and Biomolecular Engineering The University of SydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneyNSW 2006Australia Shenzhen Research Institute of Central South University Shenzhen 518000China

The formation of moirésuperlattices in twisted van der Waals(vdW)homostructures provides a versatile platform for designing the electronic band structure of two-dimensional(2D)*** graphene and transition metal dichalcogenides(TMDs)moirésystems,twist angle has been shown to be a key parameter for regulating the moiré***,the effect of the modulation of the twist angle on moirépotential and interlayer coupling has not been the subject of experimental ***,we report the observation of the modulation of moirépotential and intralayer excitons in the WS_(2)/WS_(2)*** accurately adjusting the torsion angle of the homobilayers,the depth of the moirépotential can be *** confinement effect of the moirépotential on the intralayer excitons was further demonstrated by the changing of temperature and valley ***,we show that a detection of atomic reconstructions by the low-frequency Raman mapping to map out inhomogeneities in moirélattices on a large scale,which endows the uniformity of interlayer *** results provide insights for an in-depth understanding of the behaviors of moiréexcitons in the twisted van der Waals homostructure,and promote the study of electrical engineering and topological photonics.

关键词： moirésuperlattices moiréexcitons interlayer coupling moirépotential

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Optical identification of interlayer coupling of graphene/MoS_(2) van der Waals heterostructures

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Nano Research 2021年第7期14卷 2241-2246页

作者： Mingming Yang Longlong Wang Guofeng Hu Xue Chen Peng Lai Gong Xin Cong Yi Liu Yuanbo Yang Xiaoli Li Xiaohui Zhao Xuelu Liu National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices&Hebei Key laboratory of Optic-electronic Information and Materials College of Physics Science and TechnologyHebei UniversityBaoding 071002China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Department of Physics Southern University of Science and TechnologyShenzhen 518055China

The interlayer coupling in van der Waals(vdW)heterostructures(vdWHs)is at the frontier of the fundamental research,underlying many optical *** graphene/MoS_(2) vdWHs provide an ideal platform to reveal the good interfacial coupling between graphene and MoS_(2) ***,three groups of graphene/MoS_(2) vdWHs were prepared by transferring 1–3 layers of graphene onto monolayer MoS_(2).The interlayer coupling within graphene/MoS_(2) vdWHs were characterized and analyzed by Raman spectroscopy,photoluminescence(PL)spectroscopy and optical contrast(OC)*** upshift of the A_(1g) peak of MoS_(2) and the upshift of the D and 2D peaks of SLG show that the electrons move from MoS_(2) to graphene accompanied by the dielectric shielding effect on *** weakened PL intensities and the slight red shift of A peak prove that the electrons move from MoS_(2) to graphene meanwhile the recombination of hole and electron pairs is blocked in *** results deepen the understanding of the interlayer coupling of graphene/MoS_(2) vdWHs and therefore provide guidelines for the practical design and application of optoelectronic devices based on graphene/MoS_(2) vdWHs.

关键词： graphene/MoS_(2)vdWHs Raman spectroscopy PL spectroscopy OC spectroscopy dielectric shielding effect interlayer coupling

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Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure

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Nano Research 2020年第2期13卷 576-582页

作者： Hamin Park Gwang Hyuk Shin Khang June Lee Sung-Yool Choi School of Electrical Engineering Centerfor Advanced Materials Discovery towards 3D Display KAISTDaejeon 34141Republic of Korea

Stacking of atomically thin layers of two-dimensional materials has revealed extraordinary physical phenomena owing to van der Waals(vdW)interaction at the ***,most of the studies focused on the transition metal dichalcogenide(TMD)/TMD heterostructure,while the interlayer coupling of the TMD/hexagonal boron nitride(h-BN)heterostructure has not been extensively explored despite its *** this study,the temperature-dependent interlayer coupling is demonstrated in a heterostructure of molybdenum disulfide(MoS2)and *** interface between MoS2 and the insulating substrate exerts a significant spectroscopic impact on MoS2 through substrate-induced local strain,charged impurity,and vdW *** non-resonant conditions,temperature-dependent peak shifts in Raman and photoluminescence(PL)spectra of MoS2 reveal the evolution of interlayer *** frequencies and PL peak energies at different temperatures demonstrate how substrate-induced strain,impurity,and vdW interactions at the interface influence phonon vibration and excitonic transition of *** resonant conditions at low temperature,anomalous Raman modes appear in the MoS2/h-BN heterostructure because of the enhanced electron-phonon coupling and vdW *** anomalous Raman modes are quantitatively investigated by the deconvolution of the resonance Raman spectra and described by interlayer coupling at low temperature,in agreement with complementary indications from the temperature-dependent evolution of non-resonant Raman and PL spectra.

关键词： van der Waals heterostructures interlayer coupling Raman spectroscopy excitonic resonance photoluminescence

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Signatures of strong interlayer coupling inγ-InSe revealed by local differential conductivity

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Chinese Physics B 2021年第8期30卷 163-168页

作者： Xiaoshuai Fu Li Liu Li Zhang Qilong Wu Yu Xia Lijie Zhang Yuan Tian Long-Jing Yin Zhihui Qin Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China

interlayer coupling in layered semiconductors can significantly affect their optoelectronic ***,understanding the mechanisms behind the interlayer coupling at the atomic level is not ***,we study modulations of the electronic structure induced by the interlayer coupling in theγ-phase of indium selenide(γ-InSe)using scanning probe *** observe a strong dependence of the energy gap on the sample thickness and a small effective mass along the stacking direction,which are attributed to strong interlayer *** addition,the moirépatterns observed inγ-InSe display a small band-gap variation and nearly constant local differential conductivity along the *** suggests that modulation of the electronic structure induced by the moirépotential is smeared out,indicating the presence of a significant interlayer *** theoretical calculations confirm that the interlayer coupling inγ-InSe is not only of the van der Waals origin,but also exhibits some degree of hybridization between the *** interlayer coupling might play an important role in the performance ofγ-InSe-based devices.

关键词： indium selenide(InSe) interlayer coupling scanning tunneling microscopy/spectroscopy(STM/STS) density functional theory

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Pressure-triggered stacking dependence of interlayer coupling in bilayer WS_(2)

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Science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 177-186页

作者： Zejuan Zhang Chenyin Jiao Shenghai Pei Xilong Zhou Jiaze Qin Wanli Zhang Yu Zhou Zenghui Wang Juan Xia School of Integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731China School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China

Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential ***,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in *** work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.

关键词： tungsten disulfide pressure engineering stacking order interlayer coupling

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Investigation of weak interlayer coupling in 2D layered GeS_(2) from theory to experiment

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Nano Research 2022年第2期15卷 1013-1019页

作者： Hui-Juan Yan Zongbao Li Shun-Chang Liu Xia Wang Xing Zhang Ding-Jiang Xue Jin-Song Hu Beijing National Laboratory for Molecular Sciences(BNLMS) CAS Key Laboratory of Molecular Nanostructure and NanotechnologyInstitute of ChemistryChinese Academy of SciencesBeijing 100190China School of Material and Chemical Engineering Institute of Cultural and Technological Industry Innovation ofTongrenTongren UniversityTongren 554300China University of Chinese Academy of Sciences Beijing 100049China

interlayer coupling as a unique feature for two-dimensional(2D)materials may influence their thickness-dependent physical properties,especially the bandgap due to quantum confinement ***-studied 2D materials usually possess strong interlayer coupling such as most of transition metal dichalcogenides(TMDs),PtS_(2) and so ***,2D materials with weak interlayer coupling are rarely referred that mainly focus on ReS_(2),as well as its counterpart ReSe_(2).Here we report a new member of weak interlayer coupling 2D materials,germanium disulfide(GeS_(2)).The interlayer interaction in GeS_(2) is investigated from theory to *** density functional theory calculations,we find that this extraordinarily weak interlayer coupling in GeS_(2) originates from the weak hybridization of interlayer S ***-dependent Raman spectra of GeS_(2) flakes exhibit that the Raman peaks remain unchanged when increasing the thickness;and a small first-order temperature coefficient of-0.00857 cm^(-1)·K^(-1) is obtained from the temperature-dependent Raman *** experimental results further confirm the weak interlayer coupling in GeS_(2).

关键词： interlayer coupling two-dimensional GeS_(2) temperature coefficient

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Effects of interlayer coupling on the excitons and electronic structures of WS_(2)/hBN/MoS_(2) van der Waals heterostructures

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Nano Research 2022年第3期15卷 2674-2681页

作者： Xudan Zhu Junbo He Rongjun Zhang Chunxiao Cong Yuxiang Zheng Hao Zhang Songyou Wang Haibin Zhao Meiping Zhu Shanwen Zhang Shaojuan Li Liangyao Chen Key Laboratory of Micro and Nano Photonic Structures Ministry of EducationShanghai Engineering Research Center of Ultra-Precision Optical ManufacturingSchool of Information Science and EngineeringFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and EngineeringFudan UniversityShanghai 200433China Laboratory of Thin Film Optics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Grating Technology Laboratory Changchun Institute of Optics and Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China

Inserting hexagonal boron nitride(hBN)as barrier layers into bilayer transition metal dichalcogenides heterointerface has been proved an efficient method to improve two dimensional tunneling optoelectronic device ***,the physical picture of interlayer coupling effect during incorporation of monolayer(1L-)hBN is not explicit *** this article,spectroscopic ellipsometry was used to experimentally obtain the broadband excitonic and critical point properties of WS_(2)/MoS_(2)and WS_(2)/hBN/MoS_(2)van der Waals *** find that 1L-hBN can only slightly block the interlayer electron transfer from WS_(2)layer to MoS_(2)***,insertion of 1L-hBN weakens the interlayer coupling effect by releasing quantum confinement and reducing efficient dielectric ***,the exciton binding energies in WS_(2)/hBN/MoS_(2)heterostructures blueshift comparing to those in WS_(2)/MoS_(2)*** this exciton binding energies tuning process,the reducing dielectric screening effect plays a leading *** the meantime,the quasi-particle(QP)bandgap remains unchanged before and after 1L-hBN insertion,which is attributed to released quantum confinement and decreased dielectric screening effects canceling each *** QP bandgap as along with blueshift exciton binding energies lead to the redshift exciton transition energies in WS_(2)/hBN/MoS_(2)heterostructures.

关键词： two-dimensional(2D)van der Waals heterostructure interlayer coupling excitons critical points spectroscopic ellipsometry

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Folded MoS2 layers with reduced interlayer coupling

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Nano Research 2014年第4期7卷 572-578页

作者： Andres Castellanos-Gomez Herre S. J. van der Zant Gary A. Steele Kavli Institute of Nanoscience Delft University of Technology 2528 CJ Delft The Netherlands

We study molybdenum disulfide （MoS2） structures generated by folding single-layer and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence emission yield. We additionally find that folded single-layer MoS2 structures show a contribution to photoluminescence spectra of both neutral and charged excitons, which is a characteristic feature of single-layer MoS2 that has not been observed in multilayer MoS2. The results presented here open the door to fabrication of multilayered MoS2 samples with high optical absorption while maintaining the advantageous enhanced photoluminescence emission of single-layer MoS2 by controllably twisting the MoS2 layers.

关键词： molybdenum disulfide(MoS2) folded MoS2 twisted MoS2 interlayer coupling Raman spectroscopy photoluminescence

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