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Highly efficient 1D p-Te/2D n-Bi_(2)Te_(3) heterojunction self-driven broadband photodetector

Nano Research 2024年第3期17卷 1864-1874页

作者： Chenchen Zhao Dongbo Wang Jiamu Cao Zhi Zeng Bingke Zhang Jingwen Pan Donghao Liu Sihang Liu Shujie Jiao Tianyuan Chen Gang Liu Xuan Fang Liancheng Zhao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China School of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for High Pressure Science and Technology Advanced Research Shanghai 201203China State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China

Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical ***,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension ***,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface *** device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as *** R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of *** is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.

关键词： topological insulating states interfacial recombination self-driven 1D p-Te/2D n-Bi_(2)Te_(3) photodetector

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Efficient CHzNHzPbl3 perovskite solar cells with 2TPA- n-DP hole-transporting layers

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Nano Research 2015年第4期8卷 1116-1127页

作者： Lifeng Zhu Junyan Xiao Jiangjian Shi Junjie Wang Songtao Lv Yuzhuan Xu Yanhong Luo YinXiao Shirong Wang Qingbo Meng Xianggao Li Dongmei Li Key Laboratory for Renewable Energy (CAS) Beijing Key Laboratory for New Energy Materials and Devices 8eijing National Laboratory for Condense Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China

CH3NH3PbI3 perovskite solar cells with 2TPA-n-DP （TPA = 4,4＇-（（1E, I＇E,3E,3＇E）- [1,1＇-biphenyl]4,4＇-diylbis（buta-1,3-diene-4,1-diyl））; DP = bis（N,N-di-p-tolylaniline）; n = 1, 2, 3, 4） as hole-transporting materials （HTMs） have been fabricated. After optimization of the mesoporous TiO2 film thickness, devices based on 2TPA- 2-DP with power conversion efficiencies （PCEs） of up to 12.96% have been achieved, comparable to those of devices with （2,2＇,7,7＇-tetrakis（N,N-di-p- methoxyphenylamine）-9,9＇-spirobifluorene）（spiro-OMeTAD） as HTM under similar conditions. Further time-resolved photoluminescence （PL） measurements showed a fast charge transfer process at the perovskite/2TPA-2-DP interface. With the aid of electrochemical impedance spectra, a study of the electron blocking ability of 2TPA-2-DP in the device reveals that the presence of 2TPA-2-DP can greatly increase charge transfer resistance at the HTM/Au interface in the device, thus reducing the recombination. Furthermore, the perovskite solar cells based on these four HTMs exhibit ~ood stability after testin~ for one month.

关键词： perovskite solar cells organolead halide hole-transportingmaterials interfacial recombination

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Cd微掺杂制备高效CZTSSe薄膜太阳电池(英文)

Cd微掺杂制备高效CZTSSe薄膜太阳电池(英文)

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第七届新型太阳能电池材料科学与技术学术研讨会

作者：栾红梅姚斌王磊内蒙古大学物理科学与技术学院

In the present work,we find a method of fabricating CuZnCdSn(S,Se)(CZCTSSe) solar cells through a surface Cd-doping of CuZnSnS precursor film first and then *** with Cd/(Cd+Zn) ratios of 0～6.51% was prepared by Cd surface doping realized through diffusion of Cd from surface of CuZnSn(S,Se)(CZTSSe) to its *** is found that the Cd substitutes for Zn in the CZTSSe,resulting in decrease in lattice constants and hole concentration of the *** Cd-doped also can reduce content of ZnSe on the surface of *** CZCTSSe solar cells with conventional structure were fabricated with the CZCTSSe films as *** is found that the Cd-doping can increase short-circuit current density(Jsc),open-circuit voltage(Voc) and filling factor(FF) of CZCTSSe solar cell compared to CZTSSe solar cell,and ameliorate the power conversion efficiency(PCE) by optimizing the Cd-doped *** CZCTSSe solar cell with the highest PCE of 7.30% was obtained at Cd/(Cd+Zn)=5.14%.The influence mechanism of Cd-doping on the efficiency was suggested by analysis of the effect of Cd-doping on the lattice mismatch,secondary phase and built-in field at the CZTSSe/CdS interface.

关键词： CZTSSe solar cell Cd-doped interfacial recombination Lattice mismatch

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