Spinel ferrites(MFeO,M=Mg,Cu and Zn) as promising candidates stand out among diverse semiconductor materials due to their optoelectronic tunability together with superb chemical stability.However,the saturation photoc...
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Spinel ferrites(MFeO,M=Mg,Cu and Zn) as promising candidates stand out among diverse semiconductor materials due to their optoelectronic tunability together with superb chemical stability.However,the saturation photocurrents are constrained by acute bulk recombination.Herein,we report the iron-base planar film photoelectrodes with MFeO and α-FeO interfaces structure by a simple spray pyrolysis system,which can form a type-Ⅱ configuration with abundant intimate interfaces.The design accelerates separation of photo-generated electron-hole pairs and reduce bulk recombination probability,the maximum attainable photocurrent is quite splendid.Take ZnFeO and α-FeO with intimate interfaces as an example,the photocurrent reaches 1.51 mA cm at 1.6 V versus RHE under AM 1.5 G(100 mW cm-2) irradiation and in 1 M NaOH aqueous solution,which is 19.6 and 2.1 times higher than those for ZnFeO and the α-FeO.Meanwhile,the film demonstrates a strong ability to remove highly toxic phenol via the synergistic effect of photoelectrocatalysis under AM 1.5 G irradiation and in 0.1 M NaSO aqueous solution.A quite promising in situ heterojunction strategy with abundant intimate interfaces to develop highly efficient planar film photoelectrodes is presented,which shows that the potential of spinel ferrites in regard to the hydrogen production and environmental purification of solar energy.
Perovskite solar cells(PSCs) are attracted wide attention in recent 10 years. In order to obtain high efficiency and long-term stability, a lot of work has been done. And the interface engineering has the great signif...
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Perovskite solar cells(PSCs) are attracted wide attention in recent 10 years. In order to obtain high efficiency and long-term stability, a lot of work has been done. And the interface engineering has the great significance for improving the photoelectric performance, eliminating the photocurrent lag and improving the long-term stability of devices. ZnS is a n-type semiconductor with wide band gap and it has similar physical properties to ZnO, which is conducive to the extraction and transfer of electrons. In this paper, ZnO/ZnS materials were prepared and characterized, and use it as the interfacial modification layer between ZnO and perovskite layer. MAPbI was synthesized by one-step solution method and used as optical absorption material. The devices with the structure of FTO/ZnO/ZnO-ZnS/MAPbI/P3HT/Carbon were prepared. The photoelectric performance and thermal stability of the battery were preliminarily explored. After introducing the modified layer, the thermal stability of the battery has been greatly improved. The PCE of pure ZnO PSC is 4.55%. While, the device performance with ZnO/ZnS is significantly improved, and 8.23% PCE is obtained. Therefore, the application of ZnO/ZnS structure to the interface between MAPbI and ZnO is a possible way to improve the photovoltaic performance of PSC.
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