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interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air

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Chinese Journal of Chemistry 2000年第3期18卷 315-321页

作者：朱永法阎培渝易涛曹立礼李龙土 Department of Chemistry Tsinghua University Beijing 100084 China Department of Material Science and Technology Tsinghua University Beijing 100084 China State Key Laboratory of Rare Earth Materials Chemistry and Application Peking University Beijing 100871 China

The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT/Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2, interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing temperature, and governed by the diffusion of oxygen in SiO2 interlayer at high annealing temperature. The apparent activation energy of the interface oxidation reaction was about 39.1 kJ/mol.

关键词： PZT Silicon interface diffusion interface reaction AES XPS

Study on the interface diffusion Bonding of the Copper Alloy/30CrMnSi Steel

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Study on the Interface Diffusion Bonding of the Copper Alloy...

INTERACTION BETWEEN AN EDGE DISLOCATION AND A CIRCULAR INCLUSION WITH interface SLIP AND diffusion

中国材料大会2012

作者： Juntao Zou Yanfeng Liu Lu Pei Xianhui Wang Shuhua Liang School of Materials Science and Engineering Xi'an University of Technology Department of Chemistry & Chemical Engineering Shangluo University

ISBN: (纸本)9783037856093;3037856092

The copper alloy/30CrMnSi steel bi-metal composite materials were prepared by the interface diffusion bonding *** diffusion of elements close to the bonding interface was studied and the formation and growth mechanism of dissolution layer were discussed as *** results showed that a diffusion transition layer could be formed with the different widths for copper alloy/30CrMnSi steel integrated material.A diffusion transition layer was formed close to 30CrMnSi steel side due to the inter-diffusion of the alloy *** microstructure characterization showed that no harmful brittle phase presented around the interface,and two heterogeneous materials had a good metallurgical bonding.

关键词： Copper alloy 30CrMnSi steel interface diffusion Transition layer.

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INTERACTION BETWEEN AN EDGE DISLOCATION AND A CIRCULAR INCLU...

Process optimization,microstructures and mechanical/thermal properties of Cu/Invar bi-metal matrix composites fabricated by spark plasma sintering

第二届亚洲功能材料与结构力学大会

作者： Ernie Pan School of Mechanical Engineering Zhengzhou University Department of Civil Engineering University of Akron

＜正＞We investigate in detail the transient response induced by an edge dislocation near a circular elastic inclusion with simultaneous interface slip and diffusion.A rigorous solution in series form to the interaction problem is *** the time approaches infinity,our solution just recovers the classical one derived by Srolovitz at al.（1984） for fully relaxed boundary *** addition we observe that the edge dislocation will induce a uniform rigid body rotation in the

关键词： Edge dislocation interface diffusion interface slip Relaxation times Image force

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Transactions of Nonferrous Metals Society of China 2021年第10期31卷 3050-3062页

作者： Qiang-qiang NIE Guo-hong CHEN Bing WANG Lei YANG Wen-ming TANG School of Materials Science and Engineering Hefei University of TechnologyHefei 230009China Electric Power Research Institute State GridAnhui Electric Power Co.Ltd.Hefei 230601China The 43 Research Institute of China Electronics Technology Group Corporation Hefei 230088China Anhui Province Key Laboratory of Microsystem Hefei 230088China Hefei Shengda Electronic Technology Industry Co. Ltd.Hefei 230088China Engineering Research Center of High-performance Copper Alloy Materials and Processing Ministry of EducationHefei 230009China

An orthogonal experiment scheme was designed to investigate the effects of the Cu content,compaction pressure,and sintering temperature on the microstructures and mechanical and thermal properties of(30−50)wt.%Cu/Invar bi-metal matrix composites fabricated via spark plasma sintering(SPS).The results indicated that as the Cu content increased from 30 to 50 wt.%,a continuous Cu network gradually appeared,and the density,thermal conductivity(TC)and coefficient of thermal expansion of the composites noticeably increased,but the tensile strength *** increase in the sintering temperature promoted the Cu/Invar interface diffusion,leading to a reduction in the TC but an enhancement in the tensile strength of the *** compaction pressure comprehensively affected the thermal properties of the *** 50wt.%Cu/Invar composite sintered at 700℃ and 60 MPa had the highest TC(90.7 W/(m·K)),which was significantly higher than the TCs obtained for most of the previously reported Cu/Invar composites.

关键词： spark plasma sintering(SPS) Cu/Invar bi-metal composite microstructure interface diffusion mechanical property thermal property

diffusion welding of SiCp/2014Al composites using Ni as interlayer

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Journal of University of Science and Technology Beijing 2006年第3期13卷 267-271页

作者： Tao Feng Xizhang Chen Luhai Wu Songnian Lou School of Material Science and Engineering Shanghai Jiaotong University Shanghai 200030 China School of Material Science and Engineering Jiangsu University Zhenjiang 212013 China

SiCp/2014Al composites were bonded with the vacuum diffusion welding technique using Ni as the interlayer metal. Ni and Al were interdiffused and there were intermetallic compounds formed in the inter transition layer, which was composed of Ni3Al//NiAl//NiAl3. The relation between the diffusion distance and the element concentration was calculated according to Fick＇s second law. The relations of the diffusion concentration and the diffusion welding technique parameters were calculated.

关键词： aluminum matrix composite diffusion bonding interface diffusion vacuum diffusion welding

Irregular Characteristics of Bond interface Formation in Ultrasonic Wire Wedge Bonding

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Journal of Materials Science & Technology 2006年第4期22卷 483-486页

作者： Mingyu LI Hongjun JI Chunqing WANG Au Tai KUNG Han Sur BANG Hee Seon BANG Shenzhen Graduate School of Harbin Institute of Technology Shenzhen 518055 China Microjoining Lab School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China Sun East Technology （Holdings） Ltd. Shenzhen 518103 China Department of Naval Architecture and Ocean Engineering Chosun University 375 Seosek Dong Donggu Guangju 501-759 Korea

The mechanism of ultrasonic wire wedge bonding, one of the die/chip interconnection methods, was investigated based on the characteristics of the ultrasonic wire bonding joints. The Al-1%Si wire of 25 μm in diameter was bonded on Au/Ni/Cu pad and the joint cross-section was analyzed by scanning electron microscopy （SEM） and energy-dispersive X-ray spectroscopy （EDX）. The results indicated that it is irregular for the ultrasonic bond formation, non-welded at the centre but joining well at the periphery, especially at the heel and toe of the joint. Furthermore, the diffusion and/or reaction at the cross-section interface are not clear at C-zone, while there exists a strip layer microstructure at P-zone, and the composition is 78.96 at. pct Al and 14.88 at. pct Ni, close to the Al3Ni intermetallic compound. All these observations are tentatively ascribed to the plastic flow enhanced by ultrasonic vibration and repeated cold deformation driving interdiffusion between AI and Ni at bond interface.

关键词： Ultrasonic bonding Irregular joint interface diffusion Repeated cold deformation

Electron migration behavior of Au/Cu multilayer films on Si substrate under UV radiation

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Electron migration behavior of Au/Cu multilayer films on Si ...