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Development on Si optoelectronic receiving and processing chip

Development on Si optoelectronic receiving and processing ch...

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2006 8th International Conference on Solid-State and integrated circuit technology

作者： Yang Weidong Zhang Zhengfan Li Kaicheng Ou Hongqi Huang Wengang National key Labs of Analog IC of China

ISBN: (纸本)1424401607

＜正＞In this study,a monolithic optoelectronic integrated circuit（OEIC）,in which a photodiode detector and a bipolar integrated circuit for reception and amplification are integrated on the same silicon substrate,is described. With the new process technology,the layout of optical and electronic devices is designed,and the processes of optical and electronic devices are *** a good way of developing high performance,high reliability,cost effective optoelectronic integrated circuit has been found.

关键词： Optical devices Bipolar integrated circuits Stimulated emission Monolithic integrated circuits Optoelectronic devices Photodiodes Detectors Silicon integrated circuit technology Optical design

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Impact of CMOS Scaling on RF/Mixed-Signal circuit Designs

Impact of CMOS Scaling on RF/Mixed-Signal Circuit Designs

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2006 8th International Conference on Solid-State and integrated circuit technology

作者： Mau-Chung Frank Chang University of California Los AngelesCA 90095-1594

ISBN: (纸本)1424401607

＜正＞Recent performance advancement in super-scaled CMOS technology has opened a new avenue for the implementation of microwave and millimeter-wave integrated circuits（MMICs） and high-speed data converters（ADC and DAC） on low cost and large wafer size silicon *** talk addresses critical issues involved in designing those high performance and mixed-signal integrated circuits under various constraints of the super-scaled CMOS in supply voltage, threshold mismatch,substrate loss,and effective gain *** talk will also discuss potential circuit level solutions in both topology and signaling,that might mitigate those constraints and deliver the required performance and functions in future electronics systems.

关键词： Radio frequency circuit synthesis CMOS technology integrated circuit technology Microwave technology Millimeter wave integrated circuits MMICs Costs Silicon Performance loss

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Statistical Compact Modeling and Si Verification Methodology

Statistical Compact Modeling and Si Verification Methodology

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2006 8th International Conference on Solid-State and integrated circuit technology

作者： Vineet Wason Judy An Jung-Suk Goo Zhi-Yuan Wu Qiang Chen Ciby Thuruthiyil Rasit Topaloglu Priyanka Chiney Icel Ali Advanced Micro Devices SunnyvaleCA 94088United States

ISBN: (纸本)1424401607

＜正＞As we scale down to sub-65nm technologies, transistors and interconnects no longer act as predictable elements,but start acting as statistical blocks due to static and dynamic *** invited talk first reviews some of the key variations that need to be considered for any statistical ***,details for implementing statistical models into compact modeling flow are ***,the paper reviews one of the techniques used for generating and validating statistical models with the silicon data.

关键词： integrated circuit interconnections Fluctuations MOSFET circuits Statistical analysis Doping Threshold voltage Predictive models Transistors Silicon integrated circuit technology

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A Scalable Low-k/Cu Interconnect technology using Self-Assembled Ultra-Low-k Porous Silica Films

A Scalable Low-k/Cu Interconnect Technology using Self-Assem...

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2004 7th International Conference on Solid-State and integrated circuits technology（ICSICT 2004）

作者： T.Kikkawa Y.Oku K.Kohmura N.Fujii H.Tanaka T.Goto A.Ishikawa H.Matsuo H.Miyoshi A.Nakano Y.Sonoda N.Hata Y.Seino T.Yoshino S.Takada K.Kinoshita MIRAI Advanced Semiconductor Research CenterNational Institute of Advanced Industrial Science and Technology Research Center for Nanodevices and Systems Hiroshima University

＜正＞A novel ultra-low-k porous silica film was developed by use of a self-assembly technology.A periodic hexagonal porous silica film and disordered porous silica film were formed by self-assembling surfactants and acidic silica derived from tetraethoxysilane（TEOS） on a Si *** properties of the periodic porous film such as porosity,pore diameter and resulting dielectric constant can be controlled by the alkyl chain length of the surfactant and the molecular ratio of surfactant/*** mechanical properties of the porous silica film can be reinforced by introducing tetramethyl-cyclo-tetra-siloxane （TMCTS） treatment without increasing the dielectric *** elastic modulus of 8 GPa and dielectric constant of 2 were achieved for the porous silica film. Ultra-low-k/Cu damascene integration was demonstrated for 45 nm BEOL technology.

关键词： Silicon compounds Semiconductor films Mechanical factors Dielectric constant Self-assembly Substrates integrated circuit technology Ultra large scale integration Periodic structures Furnaces

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