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inse/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Nano Research 2020年第4期13卷 1127-1132页

作者： Liangmei Wu Jinan Shi Zhang Zhou Jiahao Yan Aiwei Wang Ce Bian Jiajun Ma Ruisong Ma Hongtao Liu Jiancui Chen Yuan Huang Wu Zhou Lihong Bao Min Ouyang Sokrates T.Pantelides Hong-Jun Gao Institute of Physics Chinese Academy of SciencesP.O.Box 603y Beijing 100190China University of Chinese Academy of Sciences&CAS Center for Excellence in Topological Quantum Computation Chinese Academy of SciencesPO Box 603Beijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China Department of Physics University of MarylandMD 20742USA Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science Vanderbilt UniversityNashvilleTennessee 37235USA

Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D-material channel and the gate *** we demonstrate an indium selenide(lnSe)/hexagonal boron nitride(hBN)/graphite heterostructure as a 2D field-effect transistor(FET),with inse as channel material,hBN as dielectric,and graphite as *** fabricated FETs feature high electron mobility up to 1,146 cm2·V^-1·s^-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate *** digital inverters based on inse/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is *** advantages of the mechanical flexibility of these materials,we integrated the heterostructured inse FET on a flexible substrate,exhibiting little modification of device performance at a high strain level of up to 2%.Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.

关键词： inse van der Waals heterostruture 2D electronics flexible electronics

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Electrostatic gating of solid-ion-conductor on inse flakes and inse/h-BN heterostructures

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Chinese Physics B 2020年第11期29卷 543-547页

作者： Zhang Zhou Liangmei Wu Jiancui Chen Jiajun Ma Yuan Huang Chengmin Shen Lihong Bao Hong-Jun Gao Institute of Physics Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences&CAS Center for Excellence in Topological Quantum Computation Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

We report the electrical transport properties of inse flakes electrostatically gated by a solid ion *** large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as^1 V and steep subthreshold swing(83 mV/dec).The p-type conduction behavior of inse is obtained when negative gate voltages are *** doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride(h-BN)between inse and the solid-ion-conductor *** comparing the performance of devices with and without h-BN,the capacitance of solid ion conductors is extracted to be the same as that of^2 nm h-BN,and the mobility of inse on solid ion conductors is comparable to that on the SiO2 *** results show that solid ion conductors provide a facile and powerful method for electrostatic doping.

关键词： solid ion conductors electrostatic gating inse van der Waals heterostructure

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Contrasting strategies of optimizing carrier concentration in bulk inse for enhanced thermoelectric performance

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Rare Metals 2024年第9期43卷 4425-4432页

作者： Hao-Nan Shi Shu-Lin Bai Yu-Ping Wang Li-Zhong Su Qian Cao Cheng Chang Li-Dong Zhao School of Materials Science and Engineering Beihang UniversityBeijing 100191China School of Materials Science and Engineering Taiyuan University of Science and TechnologyTaiyuan 030024China Huabei Cooling Device Co.Ltd. Hebei 065400China

Indium selenide(inse),as a wide-bandgap semiconductor,has received extensive attention in the flexible electronics field in recent years due to its exceptional plasticity and promising thermoelectric ***,the low carrier concentration severely limits its thermoelectric performance *** this work,we conducted contrasting strategies that can be employed to increase the carrier concentration of inse,including bandgap narrowing and heterovalent ***,the carrier concentration initially increases as a result of the reduced bandgap upon Te alloying and then slightly decreases due to the weak electronegativity of *** Br doping realizes high carrier concentration by pushing the Fermi level into the conduction bands and activating the multiple *** the other hand,both Te and Br obviously suppress the thermal conductivity due to the point defect *** contrast,Br doping realizes a higher thermoelectric performance with a maximum ZT of~0.13 at 773 K benefiting from the better optimization of carrier *** work elucidates the strategies for enhancing carrier concentration at anion sites and demonstrates the high efficiency of halogen doping in ***,the carrier concentration of inse is promising to be further optimized,and future work should focus on employing approaches such as cation doping or secondphase compositing.

关键词： Thermoelectric inse Carrier concentration Bandgap Heterovalent doping

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Improving the electrical performances of inse transistors by interface engineering

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Chinese Physics B 2024年第4期33卷 153-158页

作者：曹天俊郝松吴晨晨潘晨戴玉頔程斌梁世军缪峰 Institute of Brain-Inspired Intelligence National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Institute of Interdisciplinary Physical Sciences School of PhysicsNanjing University of Science and TechnologyNanjing 210014China

inse has emerged as a promising candidate for next-generation electronics due to its predicted ultrahigh electrical ***,the efficacy of the inse transistor in meeting application requirements is hindered due to its sensitivity to *** this study,we have achieved notable enhancement in the electrical performance of inse transistors through interface *** engineered an inse/h-BN heterostructure,effectively suppressing dielectric layer-induced ***,we successfully established excellent metal-semiconductor contacts using graphene ribbons as a buffer *** a methodical approach to interface engineering,our graphene/inse/h-BN transistor demonstrates impressive on-state current,field-effect mobility,and on/off ratio at room temperature,reaching values as high as 1.1 mA/μm,904 cm^(2)·V^(-1)·s^(-1),and>10~6,*** computations corroborate that the graphene/inse heterostructure shows significant interlayer charge transfer and weak interlayer interaction,contributing to the enhanced performance of inse *** research offers a comprehensive strategy to elevate the electrical performance of inse transistors,paving the way for their utilization in future electronic applications.

关键词： two-dimensional materials inse van der Waals heterostructure electrical performances charge density difference

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Scaling law of hydrogen evolution reaction for inse monolayer with 3d transition metals doping and strain engineering

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Journal of Energy Chemistry 2020年第2期29卷 107-114页

作者： Chao Wang Yanyu Liu Jian Yuan Ping Wu Wei Zhou Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology Faculty of ScienceDepartment of Applied PhysicsInstitute of Advanced Materials PhysicsTianjin UniversityTianjin 300072China School of Aerospace Engineering Beijing Institute of TechnologyBeijing 100081China

Recently, two dimensional In Se attracts great attentions as potential hydrogen production ***, comprehensive investigations on the hydrogen evolution reaction activity of In Se monolayer with3 d transition metal doping and biaxial strain were performed based on the density functional *** metal dopants significantly increase the bonding strength between H and Se, and then adjust the hydrogen adsorption free energy to 0.02 e V by Zn doping. The enhanced hydrogen evolution reaction activity results from less electron occupying H 1 s-Se 4 pzanti-bonding states, which is well correlated with the pzband center level. Importantly, the universal scalling law was proposed to descript the evolution of hydrogen adsorption free energy including both doping and strain effects. Moreover, with appropriate band alignment, optical absorption, and carriers separation ability, Zn doped In Se monolayer is considered as a promising candidate of visible-light photocatalyst for hydrogen production.

关键词： inse monolayer Visible light photocatalyst Strain engineering 3d transition metals doping Hydrogen evolution reaction

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Optical emission enhancement of bent inse thin films

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Science China(Information Sciences) 2021年第4期64卷 149-156页

作者： Jiahao XIE Lijun ZHANG State Key Laboratory of Integrated Optoelectronics Key Laboratory of Automobile Materials of MOESchool of Materials Science and Engineering Jilin University

In contrast to the majority of two-dimensional semiconductors such as transition metal dichalcogenides, indium selenide(inse) possesses an intrinsic large out-of-plane oriented band-edge luminescent dipole. This unique anisotropic feature of band-edge optical emissions can be exploited to achieve enhanced optical signal in bent regions of materials created by geometrical modification. We herein investigate based on first-principle calculations the mechanism of this optical emission enhancement by modelling the photoluminescence processes in bent and flat regions of the inse thin film. We propose in our model that the shorter-wavelength interband transition, labelled as transition B′, between the second-highest valence band and the bottom of conduction band plays an important role in the enhancing process. Our model robustly describes the dependence of optical emission enhancement in the bent inse thin films on thickness, incident light orientation, and excitation photon energy. In particular, we found that when excitation photon energy is lower than the energy of transition B′, strong enhancement up to hundreds of times can be obtained by applying an incident light at an angle less than 70° to the inse layers. Our results provide useful references for modulating luminescent properties of inse films toward flexible optoelectronic device applications.

关键词： inse enhanced luminescence 2D semiconductor optical transition optical anisotropy

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Remarkable plasticity and softness of polymorphic inse van der Waals crystals

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Journal of Materiomics 2023年第4期9卷 709-716页

作者： Yupeng Ma Haoran Huang Yifei Liu Heyang Chen Xudong Bai Kunpeng Zhao Min Jin Tian-Ran Wei Xun Shi State Key Laboratory of Metal Matrix Composites School of Materials Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240China Wuzhen Laboratory Tongxiang314500China College of Materials Shanghai Dianji UniversityShanghai 201306China State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China

Indium selenide(inse)crystals are reported to show exceptional plasticity,a new property to twodimensional van der Waals(2D vdW)***,the correlation between plasticity and specific prototypes is unclear,and the understanding of detailed plastic deformation mechanisms is *** three prototypes of inse are predicted to be plastically deformable by calculation,and the plasticity of polymorphic crystals is verified by ***,distinct nanoindentation behaviors are seen on the cleavage and cross-section *** modulus and hardness of inse are the lowest ones among a large variety of *** plastic deformation is further perceived from chemical interactions during the slip *** for the cross-layer slip,the initial In-Se bonds break while new In-In and Se-Se bonds are newly formed,maintaining a decent interaction *** remarkable plasticity and softness alongside the novel physical properties,endow inse great promise for application in deformable and flexible electronics.

关键词： inse 2D vdW crystal Polymorphism Plasticity Softness

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inse的高压电输运性质研究

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物理学报 2013年第14期62卷 97-101页

作者：吴宝嘉李燕彭刚高春晓延边大学理学院延吉133002 吉林大学超硬材料国家重点实验室长春130012

高压下对inse样品进行原位电阻率和霍尔效应测量.电阻率测量结果显示,样品在5—6GPa区间呈现金属特性,在12GPa的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变,且具有金属特性.霍尔效应测量结果显示,样品在6.6GPa由p型半导体转变... 详细信息

高压下对inse样品进行原位电阻率和霍尔效应测量.电阻率测量结果显示,样品在5—6GPa区间呈现金属特性,在12GPa的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变,且具有金属特性.霍尔效应测量结果显示,样品在6.6GPa由p型半导体转变成n型半导体,电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的.

关键词： inse 高压电阻率霍尔效应

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非金属原子边缘修饰inse纳米带的磁电子学特性及应变调控

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物理学报 2019年第19期68卷 287-296页

作者：李野华范志强张振华柔性电子材料基因工程湖南省重点实验室长沙理工大学物理与电子科学学院

利用基于密度泛函理论的第一性原理计算方法,研究了Se边用H饱和、In边用各种非金属元素X(X=H,B,N,P,F和Cl)端接的锯齿型In Se纳米带(H-ZN(7)-X)的几何结构、磁电子特性及应变效应.计算的形成能和Forcite退火模拟表明H-ZN(7)-X具有稳定... 详细信息

利用基于密度泛函理论的第一性原理计算方法,研究了Se边用H饱和、In边用各种非金属元素X(X=H,B,N,P,F和Cl)端接的锯齿型In Se纳米带(H-ZN(7)-X)的几何结构、磁电子特性及应变效应.计算的形成能和Forcite退火模拟表明H-ZN(7)-X具有稳定的几何结构.F和Cl端接时,纳米带具有和H端接时类似的磁金属性质.N端接时,纳米带磁性最强.但B和P端接使得纳米带边缘的磁性完全消失.特别是,我们发现外加的机械应变可以增强H-ZN(7)-N磁稳定性,并且有效地调节费米能级处的自旋极化率(SP),能在0-92%之间变化,这意味着可设计机械开关来控制低偏压下的自旋输运.应变调制机制与应变诱导的键长变化导致不成对的电子的重新分布或消失有关.N-ZN(7)-N的磁性主要来源于In,Se及N原子的p轨道,这对于研发非过渡金属磁性材料有重要意义.

关键词： inse 纳米带非金属原子磁电子学特性应变效应

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Te掺杂对二维inse抗氧化性以及电子结构的影响

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物理学报 2023年第12期72卷 83-92页

作者：苗瑞霞谢妙春程开李田甜杨小峰王业飞张德栋西安邮电大学电子工程学院西安710121

In Se作为一种典型的二维层状半导体材料,具有优异的电学性能以及适中可调的带隙,在光电器件中表现出诱人的应用前景.然而有研究表明,单硒空位(Vse)体系的In Se易受O_(2)分子影响,造成In Se材料降解,严重影响其在电子器件领域的应用.本... 详细信息

In Se作为一种典型的二维层状半导体材料,具有优异的电学性能以及适中可调的带隙,在光电器件中表现出诱人的应用前景.然而有研究表明,单硒空位(Vse)体系的In Se易受O_(2)分子影响,造成In Se材料降解,严重影响其在电子器件领域的应用.本文基于In Se降解机理,提出了碲(Te)替位掺杂的方法,用于提升该材料的环境稳定性.利用密度泛函理论对不同体系电子结构、吸附能、能量反应路径等进行分析,发现Te掺杂不仅显著改善缺陷引起的In Se降解问题,同时可消除Vse产生的缺陷态,起到缺陷补偿作用.具体研究结果如下:1)O_(2)分子在Te掺杂In Se表面(In Se-Te)的解离能垒高达2.67 e V,说明其具有较强的抗氧化能力;2)O_(2)分子在In Se-Te表面保持3.87A的距离,吸附能仅有-0.03 e V,表明O_(2)分子物理吸附在其单层表面;3)Te掺杂不仅提升材料抗氧化能力,同时还消除了Vse产生的缺陷态.该研究结果将有助于进一步提升In Se二维材料器件的环境稳定性,推动In Se二维器件研究和发展.

关键词： inse 抗氧化性掺杂电子结构

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