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Nanoelectronic devices resonant tunnelling diodes grown on inp substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

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Chinese Physics B 2006年第6期15卷 1335-1338页

作者：张杨曾一平马龙王宝强朱占平王良臣杨富华 Materials Science Centre Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on inp substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm^2 has been obtained for diodes with AlAs barriers of ten monolayers, and an Ino.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

关键词： resonant tunnelling diode inp substrate molecular beam epitaxy high resolution transmission electron microscope

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High bandwidth surface-illuminated InGaAs/inp uni-travelling-carrier photodetector

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Chinese Physics B 2013年第11期22卷 651-655页

作者：李冲薛春来李传波刘智成步文王启明 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences

Uni-traveling-carrier photodiodes （UTC-PDs） with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow inp cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-μm-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 μm was 0.32 A/W. The saturation output current was over 19.0 mA without bias.

关键词： surface-illuminated uni-traveling-carrier photodiode inp substrate

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1.0μm gate-length inp-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

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Journal of Central South University 2012年第12期19卷 3444-3448页

作者：高成李海鸥黄姣英刁胜龙 School of Reliability and System Engineering Beihang University Information&Communication College Guilin University of Electronic Technology

InGaAs high electron mobility transistors （HEMTs） on inp substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing inp-based HEMT by MOCVD.

关键词： metamorphic device mental organic chemical vapor deposition high electron mobility transistors inp substrate InGaAs

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