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Superior material qualities and transport properties of ingan channel heterostructure grown by pulsed metal organic chemical vapor deposition

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Chinese Physics B 2016年第1期25卷 796-801页

作者：张雅超周小伟许晟瑞陈大正王之哲汪星张金风张进成郝跃 State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University

Pulsed metal organic chemical vapor deposition is introduced into the growth of ingan channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free ingan channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that ingan channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that ingan channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

关键词： heterostructure ingan channel pulsed metal organic chemical vapor deposition

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Fang-Howard wave function modelling of electron mobility in Alingan/AlN/ingan/GaN double heterostructures

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Chinese Physics B 2021年第9期30卷 451-455页

作者： Yao Li Hong-Bin Pu Department of Electronic Engineering Xi'an University of TechnologyXi'an 710048China Key Laboratory of Wide Bandgap Semiconductor Materials Ministry of EducationXi'an 710071China Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion Xi'an 710048China

To study the electron transport properties in ingan channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back *** scattering mechanisms,such as dislocation impurity(DIS)scattering,polar optical phonon(POP)scattering,piezoelectric field(PE)scattering,interface roughness(IFR)scattering,deformation potential(DP)scattering,alloy disorder(ADO)scattering from ingan channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of Alingan/AlN/ingan/GaN double heterostructure(DH)to the theoretical Alingan/AlN/ingan single heterostructure(SH)is made and analyzed with a full range of barrier alloy *** effect of channel alloy composition on ingan channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N ***,the temperature-dependent two-dimensional electron gas(2DEG)density and mobility in ingan channel-based DH with Al_(0.83)In_(0.13)Ga_(0.04)N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are *** results are expected to conduce to the practical application of ingan channel-based heterostructures.

关键词： scattering mechanism double heterostructures electron mobility ingan channel

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