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Chinese Physics Letters 2011年第11期28卷 194-197页

作者： LI Li-Gong LIU Shu-Man LUO Shuai YANG Tao WANG Li-Jun LIU Feng-Qi YE Xiao-Ling XU Bo WANG Zhan-Guo Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 Department of Physics Tsinghua UniversityBeijing 100084

inas/gasb type-II superlattices were grown on(100)gasb substrates by metalorganic chemical vapor *** scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like(plane of mixed As and Sb atoms that connect the gasb and inas layers)*** the InSb-like interface results in nanopipes and As contamination of the gasb layers.X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.

关键词： inas/gasb scattering gasb

High quantum efficiency long-/long-wave dual-color type-Ⅱ inas/gasb infrared detector

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Chinese Physics B 2019年第3期28卷 386-390页

作者： Zhi Jiang Yao-Yao Sun Chun-Yan Guo Yue-Xi Lv Hong-Yue Hao Dong-Wei Jiang Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ inas/gasb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.

关键词： infrared detector inas/gasb superlattice dual-color molecular beam epitaxy

Metalorganic Chemical Vapor Deposition Growth of inas/gasb Superlattices on GaAs Substrates and Doping Studies of P-gasb and N-inas

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Chinese Physics Letters 2012年第7期29卷 207-209页

inas/gasb type-Ⅱ superlattices (SLs),Zn-doped GaSh and Si-doped inas were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition.X-ray diffraction reveals that complete strain compensation between the SLs and the gasb buffer layer is achieved in our SL *** relationship between the hole concentration p in gasb and the diethylzinc (DEZn) flow rate is poc[DEZn]*** electron concentration in inas does not show good linearity with the SiH4 flow *** growth rate of the p-gasb epilayer is decreased as the DEZn mole fraction increases,while the growth rate of the n-inas epilayer is weakly dependent on the SiH4 flow rate.

关键词： inas/gasb gasb deposition

Growth of high material quality inas/gasb type-Ⅱ superlattice for long-wavelength infrared range by molecular beam epitaxy

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Chinese Physics B 2022年第9期31卷 624-627页

作者： Fang-Qi Lin Nong Li Wen-Guang Zhou Jun-Kai Jiang Fa-Ran Chang Yong Li Su-Ning Cui Wei-Qiang Chen Dong-Wei Jiang Hong-Yue Hao Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality inas/gasb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth *** results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,*** intensity of the zero-order diffraction peak is strongest at the optimal *** relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 ***-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.

关键词： type-Ⅱsuperlattice inas/gasb long-wavelength strain-balanced

Mid-Infrared inas/gasb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

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Chinese Physics Letters 2020年第6期37卷 115-118页

作者： Yu Zhao Yan Teng Jing-Jun Miao Qi-Hua Wu Jing-Jing Gao Xin Li Xiu-Jun Hao Ying-Chun Zhao Xu Dong Min Xiong Yong Huang Key Lab of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nano-fabrication Facility Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China

Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of inas/gasb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal-organic chemical vapor deposition *** formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and itsⅠ-Ⅴcharacteristics.A cut-off wavelength around 5μm was determined in 77 K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640μm *** preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

关键词： inas/gasb dopant planar

Comparison of short period inas/gasb superlattices on gasb and GaAs substrates

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Science China(Technological Sciences) 2009年第1期52卷 23-27页

作者： GUO Jie CHEN HuiJuan SUN WeiGuo HAO RuiTing XU YingQiang NIU ZhiChuan Material School NorthWest Polytechnical UniversityXi’an 610000China Luoyang Optical Electronics Center Luoyang 471009China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China

Type II superlattices (SLs) short period inas(4ML)/gasb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on gasb substrates. A smooth gasb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/gasb superlattices smooth layer. SLs grown on GaAs substrates (GaAs-based SLs) showed well-resolved satellite peaks in XRD. gasb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55 μm with a full width at half maximum (FWHM) of 20 meV, narrower than 31 meV of GaAs-based SLs. Inferior optical absorption of GaAs-based SL was observed in the range of 2―3 μm. Photoresponse of gasb-based SLs showed the cut-off wavelength at 2.6 μm.

关键词： inas/gasb superlattice substrates infrared detector

inas/gasb Ⅱ类超晶格长波红外探测器的实时γ辐照效应

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红外与毫米波学报 2017年第6期36卷 688-693页

作者：靳川许佳佳黄爱波徐志成周易白治中王芳芳陈建新陈洪雷丁瑞军何力中国科学院上海技术物理研究所红外成像材料与器件重点实验室上海200083 中国科学院大学北京100049

研究了inas/gasb Ⅱ类超晶格长波探测器的γ辐照效应.在^(60)Co源γ辐照下器件的电流—电压(I-V)特性并未随辐照剂量的增大而发生显著的变化,100 krad(Si)辐照剂量下的零偏阻抗相较辐照前的减小率仅为3.4%,表明该探测器具有很好的抗辐... 详细信息

研究了inas/gasb Ⅱ类超晶格长波探测器的γ辐照效应.在^(60)Co源γ辐照下器件的电流—电压(I-V)特性并未随辐照剂量的增大而发生显著的变化,100 krad(Si)辐照剂量下的零偏阻抗相较辐照前的减小率仅为3.4%,表明该探测器具有很好的抗辐照性能.结合不同辐照剂量下的实时I-V特性曲线和辐照停止后器件电流随时间的演化情况,对辐照所带来的器件性能的损伤以及微观损伤机理进行了分析.发现零偏压和小反向偏压下,辐照开始后电流即有明显增大,辐照损伤以暂态的电离效应为主导,器件性能可以在很短时间内恢复.而大反向偏压下器件暗电流的主导机制为直接隧穿电流,辐照所引入位移效应的影响使得暗电流随辐照剂量增大而减小,损伤需通过退火效应缓慢恢复,弛豫时间明显长于电离效应损伤.

关键词： γ辐照实时辐照效应长波红外探测器 inas/gasb Ⅱ类超晶格

Mid-wavelength inas/gasb type-Ⅱ superlattice barrier detector with nBn design and M barrier

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Optoelectronics Letters 2023年第10期19卷 577-582页

作者： LIU Zhaojun ZHU Lianqing LU Lidan DONG Mingli ZHANG Dongliang ZHENG Xiantong School of Opto-Electronic Engineering Changchun University of Science&TechnologyChangchun130022China Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument Beijing Information Science&Technology UniversityBeijing100192China Key Laboratory of Optical Fiber Sensing and System Beijing Information Science&Technology UniversityBeijing100016China

This study reports the performance of an inas/gasb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k·p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction(XRD) and atomic force microscope(AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 m V, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the Varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5A/cm2and differential resistance area(RA) product of 1.0×104Ω·cm2are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 μm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating(ARC), and a detectivity of 9.17×1011cm·Hz1/2/W at 77 K and 0.3 V.

关键词： inas/gasb barrier structure

inas/gasb超晶格中波焦平面材料的分子束外延技术

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红外与毫米波学报 2011年第5期30卷 406-408,438页

作者：徐庆庆陈建新周易李天兴吕翔何力中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室上海200083

报道了inas/gasb超晶格中波材料的分子束外延生长技术研究.通过改变gasb衬底上分子束外延inas/gasb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配Δa/a=1.5×10-4,原子级平整表面的inas/G... 详细信息

报道了inas/gasb超晶格中波材料的分子束外延生长技术研究.通过改变gasb衬底上分子束外延inas/gasb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配Δa/a=1.5×10-4,原子级平整表面的inas/gasb超晶格材料,材料77 K截止波长为4.87μm.

关键词： inas/gasb 超晶格分子束外延

320×256元inas/gasb II类超晶格中波红外双色焦平面探测器

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红外与毫米波学报 2015年第6期34卷 716-720页

作者：白治中徐志成周易姚华城陈洪雷陈建新丁瑞军何力中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室上海200083

报道了320×256元inas/gasb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在gasb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML I... 详细信息

报道了320×256元inas/gasb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在gasb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML inas/7 ML gasb和10 ML inas/10 ML gasb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.

关键词： inas/gasb 超晶格双色焦平面