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Growth of high material quality inas/gasb type-Ⅱ superlattice for long-wavelength infrared range by molecular beam epitaxy

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Chinese Physics B 2022年第9期31卷 624-627页

作者：林芳祁李农周文广蒋俊锴常发冉李勇崔素宁陈伟强蒋洞微郝宏玥王国伟徐应强牛智川 State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

By optimizing theⅤ/Ⅲbeam-equivalent pressure ratio,a high-quality inas/gasb type-Ⅱsuperlattice material for the long-wavelength infrared(LWIR)range is achieved by molecular beam epitaxy(MBE).High-resolution x-ray diffraction(HRXRD),atomic force microscopy(AFM),and Fourier transform infrared(FTIR)spectrometer are used to characterize the material growth quality.The results show that the full width at half maximum(FWHM)of the superlattice zero-order diffraction peak,the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks,and the surface roughness get the best results when the beam-equivalent pressure(BEP)ratio reaches the optimal value,which are 28 arcsec,13 arcsec,and 1.63?,respectively.The intensity of the zero-order diffraction peak is strongest at the optimal value.The relative spectral response of the LWIR detector shows that it exhibits a 100%cut-off wavelength of 12.6μm at 77 K.High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector.

关键词： type-Ⅱsuperlattice inas/gasb long-wavelength strain-balanced

Mid-Infrared inas/gasb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

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Chinese Physics Letters 2020年第6期37卷 115-118页

作者：赵宇滕龑缪静君吴启花高晶晶李欣郝修军赵迎春董旭熊敏黄勇 Key Lab of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nano-fabrication Facility Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China

Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of inas/gasb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal-organic chemical vapor deposition reactors.The formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and itsⅠ-Ⅴcharacteristics.A cut-off wavelength around 5μm was determined in 77 K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640μm diameter.These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

关键词： inas/gasb dopant planar

Effect of Interface Bond Type on the Structure of inas/gasb Superlattices Grown by Metalorganic Chemical Vapor Deposition

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Chinese Physics Letters 2011年第11期28卷 194-197页

作者：李立功刘舒曼罗帅杨涛王利军刘峰奇叶小玲徐波王占国 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 Department of Physics Tsinghua UniversityBeijing 100084

inas/gasb type-II superlattices were grown on(100)gasb substrates by metalorganic chemical vapor deposition.Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like(plane of mixed As and Sb atoms that connect the gasb and inas layers)interfaces.Introducing the InSb-like interface results in nanopipes and As contamination of the gasb layers.X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.

关键词： inas/gasb scattering gasb

Comparison of short period inas/gasb superlattices on gasb and GaAs substrates

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Science China(Technological Sciences) 2009年第1期52卷 23-27页

作者： GUO Jie CHEN HuiJuan SUN WeiGuo HAO RuiTing XU YingQiang NIU ZhiChuan Material School NorthWest Polytechnical UniversityXi’an 610000China Luoyang Optical Electronics Center Luoyang 471009China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China

Type II superlattices (SLs) short period inas(4ML)/gasb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on gasb substrates. A smooth gasb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/gasb superlattices smooth layer. SLs grown on GaAs substrates (GaAs-based SLs) showed well-resolved satellite peaks in XRD. gasb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55 μm with a full width at half maximum (FWHM) of 20 meV, narrower than 31 meV of GaAs-based SLs. Inferior optical absorption of GaAs-based SL was observed in the range of 2―3 μm. Photoresponse of gasb-based SLs showed the cut-off wavelength at 2.6 μm.

关键词： inas/gasb superlattice substrates infrared detector

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pπBn型Ⅱ类超晶格暗电流特性研究

激光与红外 2024年第5期54卷 750-757页

作者：闫勇王晓华周朋刘铭中国电子科技集团公司第十一研究所北京100015

inas/gasbⅡ类超晶格(T2SL)红外探测器由于具有宽光谱探测能力、较好的材料均匀性、可以抑制载流子俄歇复合率和灵活的能带设计等优点,在长波红外探测领域具有很大的优势。但由于暗电流较大,其性能并未达到理论预测。pπBn结构是在超晶... 详细信息

inas/gasbⅡ类超晶格(T2SL)红外探测器由于具有宽光谱探测能力、较好的材料均匀性、可以抑制载流子俄歇复合率和灵活的能带设计等优点,在长波红外探测领域具有很大的优势。但由于暗电流较大,其性能并未达到理论预测。pπBn结构是在超晶格材料的吸收层和接触层之间增加单极势垒,以抑制G-R暗电流和隧穿暗电流。本文分别从理论上研究了吸收层、势垒层和接触层的超晶格能带结构。模拟了pπBn结构的inas/gasb T2SL,研究了其吸收层掺杂浓度、势垒层掺杂浓度和势垒厚度对器件暗电流的影响。通过优化吸收层掺杂浓度、势垒层厚度和掺杂浓度,得到暗电流密度为8.35×10^(-7)A/cm^(-2)的pπBn结构inas/gasb T2SL,与优化前的结构相比,暗电流降低了一个数量级。研究过程不仅为pπBn结构的inas/gasb T2SL器件的低暗电流设计提供了指导,而且为优化超晶格器件的暗电流提供了一种系统的方法。

关键词： inas/gasb 能带结构暗电流密度

inas/gasb超晶格中波焦平面材料的分子束外延技术

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红外与毫米波学报 2011年第5期30卷 406-408,438页

作者：徐庆庆陈建新周易李天兴吕翔何力中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室上海200083

报道了inas/gasb超晶格中波材料的分子束外延生长技术研究.通过改变gasb衬底上分子束外延inas/gasb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配Δa/a=1.5×10-4,原子级平整表面的inas/G... 详细信息

报道了inas/gasb超晶格中波材料的分子束外延生长技术研究.通过改变gasb衬底上分子束外延inas/gasb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配Δa/a=1.5×10-4,原子级平整表面的inas/gasb超晶格材料,材料77 K截止波长为4.87μm.

关键词： inas/gasb 超晶格分子束外延

High quantum efficiency long-/long-wave dual-color type-Ⅱ inas/gasb infrared detector

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Chinese Physics B 2019年第3期28卷 386-390页

作者：蒋志孙姚耀郭春妍吕粤希郝宏玥蒋洞微王国伟徐应强牛智川 State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ inas/gasb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.

关键词： infrared detector inas/gasb superlattice dual-color molecular beam epitaxy

Electronic Structure of Type-Ⅱ inas/gasb Misaligned Superlattice

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Chinese Physics Letters 1994年第2期11卷 109-112页

作者： LONG Fei LIU Shenzhi MEI Fei MIAO Jingqi LIANG Jingguo Department of Physics Jiangxi Normal Universityt Nanchang 330027 Computer Center Jiangxi Normal Universityt Nanchang 330027 Department of Physics Peking Universityf Beijing 100871

The Energy band edges of type-Ⅱ inas/gasb(001)misaligned superlattices as functions of inas and gasb layer thicknesses are calculated by a pseudopotential method with quick convergency.The results show the trend of deep-shallow transitions of impurities in the superlattices.The regime in which the superlattice changes from semiconductor to semimetal is also showed.

关键词： inas/gasb regime shallow

生长温度对inas／gasb超晶格晶体结构和表面形貌的影响

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功能材料 2008年第10期39卷 1605-1607页

作者：郭杰孙维国陈慧娟彭震宇鲁正雄郝瑞亭周志强许应强牛智川西北工业大学材料学院陕西西安710072 中国空空导弹研究院河南洛阳471009 中科院半导体研究所北京100083

采用分子束外延（MBE）技术，在gasb（100）衬底上外延生长inas（4ML）／gasb（8ML）超晶格（SLs）。研究了生长温度（400～440℃）对超晶格晶体结构和表面形貌的影响。结果表明，420℃生长的超晶格结构完整和表面粗糙度最小，其荧光光... 详细信息

采用分子束外延（MBE）技术，在gasb（100）衬底上外延生长inas（4ML）／gasb（8ML）超晶格（SLs）。研究了生长温度（400～440℃）对超晶格晶体结构和表面形貌的影响。结果表明，420℃生长的超晶格结构完整和表面粗糙度最小，其荧光光谱（PL）峰值波长在约2．54μm处，响应光谱50％截止波长在约2．4μm处。通过控制快门顺序形成InSb和混合两种界面，并发现生长温度强烈影响混合界面inas／gasb超晶格结构和表面形貌，而对InSb界面超晶格的影响较小。

关键词： inas/gasb XRD 生长温度界面