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Chinese Physics B 2019年第2期28卷 428-433页

作者： Jing Zhang Hongliang Lv Haiqiao Ni Shizheng Yang Xiaoran Cui Zhichuan Niu Yimen Zhang Yuming Zhang School of Microelectronics Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences

The growth of the inas film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm^2/V·s in the sample, in which the 10-nm inas nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of inas is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm^2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.

关键词： inas Si high electron mobility growth temperature InGaAlAs metamorphic buffer

Growth and characterization of inas quantum dots with low-density and long emission wavelength

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Chinese Optics Letters 2008年第1期6卷 71-73页

作者：李林刘国军李占国李梅王晓华 National Key Lab of High Power Semiconductor Lasers.Changchun University of Science and Technology

The growth parameters affecting the deposition of self-assembled inas quantum dots （QDs） on GaAs substrate by low-pressure metal-organic chemical vapor deposition （MOCVD） are reported. The low-density inas QDs （- 5 × 10^8cm^-2） are achieved using high growth temperature and low inas coverage. Photoluminescence （PL） measurements show the good optical quality of low-density QDs. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1361 nm and 23 meV （35 nm）, respectively, which are obtained as the GaAs capping layer grown using triethylgallium （TEG） and tertiallybutylarsine （TBA）. The PL spectra exhibit three emission peaks at 1361, 1280, and 1204 nm, which correspond to the ground state, the first excited state, and the second excited state of the ODs, respectively.

关键词： inas Growth and characterization of inas quantum dots with low-density and long emission wavelength QDs

Mirror-twin induced bicrystalline inas nanoleaves

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Nano Research 2016年第3期9卷 766-773页

作者： Mun Teng Soo Kun Zheng Qiang Gao Hark Hoe Tan Chennupati Jagadish Jin Zou Materials Engineering The University of Queensland St. Lucia QLD 4072 Australia Centre for Microscopy and Microanalysis The University of Queensland St. Lucia QLD 4072 Australia Australian Institute for Bioengineering and Nanotechnology The University of Queensland St. Lucia QLD 4072 Australia Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia

In this study, leaf-like one-dimensional inas nanostructures were grown by the metal-organic chemical vapor deposition method. Detailed structural charac- terization suggests that the nanoleaves contain relatively low-energy {122} or {133} mirror twins acting as their midribs and narrow sections connecting the nanoleaves and their underlying bases as petioles. Importantly, the mirror twins lead to identical lateral growth of the twinned structures in terms of crystallography and polarity, which is essential for the formation of lateral symmetrical nanoleaves. It has been found that the formation of nanoleaves is driven by catalyst energy minimization. This study provides a biomimic of leaf found in nature by fabricating a semiconductor nanoleaf.

关键词： inas nanoleaf twin boundary mirror twin

Axiotaxy driven growth of belt-shaped inas nanowires in molecular beam epitaxy

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Nano Research 2021年第7期14卷 2330-2336页

作者： Qiang Sun Dong Pan Xutao Zhang Jianhua Zhao Pingping Chen Wei Lu Jin Zou School of Materials Engineering University of QueenslandQueensland 4072Australia Centre for Microscopy and Microanalysis The University of QueenslandQueensland 4072Australia State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Physical Science and Technology Northwestern Polytechnical UniversityXi'an 710129China State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

In this study,we demonstrate the axiotaxy driven growth of belt-shaped inas nanowires using Au catalysts by molecular beam *** is found that,the zinc-blende structured inas nanowires,with the features of[113]growth direction and extensive{110}side-surfaces,are induced by catalysts in Au–In α phase through the axiotaxy growth,in which the lattice mismatch between the projections of atomic planes onto nanowire/catalyst interfaces is minimized by forming extraordinary tilted *** atomic-resolution in situ TEM heating experiments show that the catalysts remained in the solid state of Au–In α phase during the axiotaxy growth,by which the vapor–solid–solid growth mechanism can be *** manipulating the growth direction,this unusual growth mechanism can provide a practical pathway to control the morphology of the low-dimensional nanomaterials,from conventional nanowires to belt-shaped nanowires utilizing a significant lateral growth,simply using nanoparticles as catalyst.

关键词： inas nanowire axiotaxy molecular beam epitaxy

Temperature-Dependent Photoluminescence Characteristics of inas/GaAs Quantum Dots Directly Grown on Si Substrates

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Chinese Physics Letters 2016年第4期33卷 52-55页

作者：王霆刘会赟张建军 Institute of Physics Chinese Academy of Sciences Department of Electronic & Electrical Engineering University College London

The first operation of an electrically pumped 1.3μm inas/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm inas/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based inas/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.

关键词： GaAs inas Temperature-Dependent Photoluminescence Characteristics of inas/GaAs Quantum Dots Directly Grown on Si Substrates of Si on

Insight of surface treatments for CMOS compatibility of inas nanowi

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Nano Research 2019年第3期12卷 581-586页

作者： Daya S. Dhungana Anne Hemeryck Nicolo Sartori Pier-Francesco Fazzini Filadelfo Cristiano Sebastien R. Plissard CNRS LAAS-CNRS Universite de Toulouse F-31400 Toulouse France LPCNO INSA Universite de Toulouse Toulouse France

A CMOS compatible process is prese nted in order to grow self-catalyzed inas nano wires on silic on by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas or plasma) during the substrate degassing combined with an in-situ arsenic ann eali ng prior to growth. Morphological and structural characterizati ons of the inas nano wires are prese nted and growth mecha nisms are discussed in detail. The major in flue nee of surface termi nation is exposed both experime ntally and theoretically using statistics on ensemble of nanowires and density functional theory (DFT) calculations. The differences observed between Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) growth of I nAs nano wires can be explai ned by these differe nt surfaces termi nations. The transition between a vapor solid (VS) and a vapor liquid solid (VLS) growth mechanism is presented. Optimized growth conditions lead to very high aspect ratio nano wires (up to 50 nm in diameter and 3 micron in len gth) without passi ng the 410℃ thermal limit, which makes the whole process CMOS compatible. Overall, our results suggest a new method for surface preparation and a possible tuning of the growth mechanism using different surface termi nations.

关键词： Ⅲ-Ⅴ semiconductors on silicon inas nanowires self-catalyzed growth hydrogen preparation growth modeling density functional theory (DFT) modeling

Residual impurities and electrical properties of undoped LEC inas single crystals

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Journal of Semiconductors 2010年第4期31卷 1-4页

作者：胡炜杰赵有文孙文荣段满龙董志远杨俊 Institute of Semiconductors Chinese Academy of Sciences

Impurities and their influence on the properties oflnAs single crystals have been studied by combining the results of glow discharge mass spectrometry （GDMS）, Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-inas single crystals and exhibits a significant influence on the electrical and optical properties.

关键词： inas single crystal impurity defect

Molecular Beam Epitaxy of Zero Lattice-Mismatch inas/GaSb Type-Ⅱ Superlattice

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Chinese Physics Letters 2016年第12期33卷 142-145页

作者：于海龙吴皓越朱海军宋国峰徐云 Nano-Optoelectronics Laboratory Institute of SemiconductorsChinese Academy of Sciences

Type-Ⅱ inas/GaSb superlattiees made of 13 inas monolayers （MLs） and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between inas and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, Ⅴ/Ⅲ beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice （SL） structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsee for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak.

关键词： GaSb is InSb Molecular Beam Epitaxy of Zero Lattice-Mismatch inas/GaSb Type Superlattice inas of

Extremely low density self-assembled inas/GaAs quantum dots

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Chinese Optics Letters 2008年第6期6卷 443-445页

作者：李林刘国军李占国李梅王晓华 National Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology

The self-assembled inas/GaAs quantum dots （QDs） with extremely low density of 8× 10^6 cm^-2 are achieved using higher growth temperature and lower inas coverage by low-pressure metal-organic chemical vapour deposition （MOVCD）. As a result of micro-photoluminescence （micro-PL）, for extremely low density of 8 × 10^6 cm^-2 inas QDs in the micro-PL measurements at 10 K, only one emission peak has been achieved. It is believed that the inas QDs have a good potential to realize single photon sources.

关键词： inas QDs GaAs Extremely low density self-assembled inas/GaAs quantum dots

Self-Organized inas Quantum Wires on GaAs （331）A Substrates

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Chinese Physics Letters 2003年第10期20卷 1819-1821页

作者：封松林龚政方志丹苗振华牛智川 NationalLaboratoryforSuperlatticesandMicrostructures InstituteofSemiconductorsChineseAcademyofSciencesPOBox912Beifing100083

Self-organized inas quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of inas QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the inas layers, up to 1100 nm. The height of inas QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of inas QWRs was attributed to the diffusion anisotropy of In adatoms.

关键词： inas 自组织量子化 GaAs 砷化铟砷化镓衬底半导体量子点低维结构