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Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

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Chinese Physics B 2023年第3期32卷 544-548页

作者：马淑芳李磊孔庆波徐阳刘青明张帅张西数韩斌仇伯仓许并社郝晓东 Materials Institute of Atomic and Molecular Science Shaanxi University of Science and TechnologyXi'an 710021China School of Materials Science and Engineering Shaanxi University of Science and TechnologyXi'an 710021China Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of TechnologyTaiyuan 030024China

The in segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)*** facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that in segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the ***,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.

关键词： InGaAs/AlGaAs quantum well GaAs insertion layer in segregation scanning transmission electron microscopy

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Design and growth of GaN-based blue and green laser diodes

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Science China Materials 2020年第8期63卷 1348-1363页

作者： Aiqin Tian Lei Hu Liqun Zhang Jianping Liu Hui Yang Key Lab of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China

GaN-based laser diodes(LDs)extend the wavelength of semiconductor LDs into the visible and ultraviolet spectrum ranges,and are therefore expected to be widely used in quantum technology,bio&medical instruments,laser displays,lighting and materials *** development of blue and green LDs is still challenging,even though they are based on the sameⅢ-nitride materials as GaN-based lightemitting *** challenges and progress of GaN-based blue and green LDs are reviewed from the aspects of epitaxial growth and layer structure *** to large differences in lattice constants and growth conditions for InN,GaN,and AlN,considerable effort is required to improve the quality of InGaN multiple quantum well(MQW)gain medium for blue and especially green LDs.p-type doping profiles,conditions and layer structures are critical to reduce the internal losses and to mitigate the degradation of InGaN *** injection is also a key issue for GaN-based LDs.

关键词： GaN-based LDs InG aN therm al degradation in segregation optical loss carrier injection

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