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Area-Efficient Low Power CMOS image sensor Readout Circuit with Fixed Pattern Noise Cancellation

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Transactions of Tianjin University 2010年第5期16卷 342-347页

作者：赵士彬姚素英聂凯明徐江涛 School of Electronic Information Engineering Tianjin University

A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is *** using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...

关键词： imaging system image sensor low power electronic capacitor operational amplifier fixed pattern noise bandwidth balance technology op-amp sharing

Fabrication of PdSe2/GaAs Heterojunction for Sensitive Near-Infrared Photovoltaic Detector and image sensor Application

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Chinese Journal of Chemical Physics 2020年第6期33卷 733-742,I0003页

作者： Lin-bao Luo Xiu-xing Zhang Chen Li Jia-xiang Li Xing-yuan Zhao Zhi-xiang Zhang Hong-yun Chen Di Wu Feng-xia Liang School of Electronic Science and Applied Physics Hefei University of TechnologyHefei 230009China School of Materials Sciences and Engineering Hefei University of TechnologyHefei 230009China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450052China

In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar *** as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power *** device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias *** responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,***,the device showed excellent stability and reliable *** 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the ***,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.

关键词： van der Waals heterojunction Two dimensional materials Near-infrared light photodetector image sensor Responsivity

128×128 element PtSi infrared CCD image sensor

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Semiconductor Photonics and Technology 1995年第1期1卷 43-51页

作者： YANG Jiade LIU Jungang LI Zuojin YANG Yasheng (Chongqing Optoelectrouics Research Institute, Yongchuan 632163, CHN)

A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill factor of 40 percent,the nonuniformity of 5% or less and the dynamic range of over or equal to 50 *** noise equivalent temperature difference is 0.2 K with f/1.0 optics at 300 K background. In this paper,the principle of operation,design consideration and fabrication technology for the device are described.

关键词： Infrared Detector Charge Coupled Devices image sensor Focal Plane Arrays

A Solar Ray Automatic Tracking Device Based on image sensor

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A Solar Ray Automatic Tracking Device Based on Image Sensor

Time-dependent crosstalk effects for image sensors with different isolation structures

第三十届中国控制会议

作者： HAN Changjun~1,LV Yi~1,HAO Yu~2,JIN Jingjing~2 1.Academy of Information Technology,Eastern Liaoning University,Dandong 118001,Liaoning,P.R.China 2.School of Information Science & Engineering,Northeastern University,Shenyang 110819,P.R.China.

＜正＞Solar water heaters,solar cells and other solar equipments can not utilize the solar energy *** the energy conversion of solar energy devices can be vertical to the sun rays,more solar energy can be collected in the limited *** paper presents a solar ray automatic tracking device based on image sensor which instead of photosensitive *** imaging device is designed according to the principles of pinhole imaging,making the sun of divergence be received on the screen through pinhole imaging,and to be sun *** image sensors gather the imaging information on the screen,and output the image signals.

关键词： Solar Energy Automatic Tracking image sensor Optical Imaging Pinhole

来源： cnki会议评论

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Chinese Physics B 2018年第8期27卷 640-644页

作者： Lei Shen Li-Qiao Liu Hao Hao Gang Du Xiao-Yan Liu Institute of Microelectronics Peking UniversityBeijing 100871China

Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isola- tion structures are investigated. According to the different depths of photo-diode （PD） and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.

关键词： image sensor crosstalk pixel isolation

Highly aligned organic microwire crystal arrays for high-performance polarization-sensitive photodetectors and image sensors

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Science China Materials 2022年第11期65卷 3105-3114页

作者： Shun-Xin Li Yang An Xiang-Chao Sun He Zhu Hong Xia Hong-Bo Sun State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China State Key Laboratory of Precision Measurement Technology&Instruments Department of Precision InstrumentTsinghua UniversityBeijing 100084China

Organic semiconductors with excellent optoelectronic properties are important building blocks for highperformance organic *** organic crystals with high precision and accurately positioning them at the target position are major challenges for integrated ***,uncontrollable dewetting of the conventional solution method leads to as-prepared micro-nanocrystals with high defect-state density,low crystalline quality,and disordered distribution,which impair the uniformity of the device performance and limit *** regulating the solution position with a template and guiding the solution flow direction under gravity,aligned organic microwire arrays and polygonal patterns were *** polarization-sensitive photodetector exhibited responsivity up to 1234 A W^(-1),linear dynamic range of 148 dB,I_(photo)/I_(dark)of 10^(4),response time as low as 1.1 ms,and dichroic ratio up to *** the homogeneity of microwire arrays,the device-to-device variation was reduced to 3.58%,resulting in high-quality *** study provides new insights into organic micro/nanocrystal patterning and device integration.

关键词： organic semiconductor patterning polarization-sensitive photodetector low device-to-device variation image sensor

Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application

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Science China(Information Sciences) 2018年第6期61卷 32-39页

作者： Qingyu CHEN Min LIN Yichen FANG Zongwei WANG Yuchao YANG Jintong XU Yimao CAI Ru HUANG Institute of Microelectronics Peking University Research Center of Flexible Electronics Peking University Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical PhysicsChinese Academy of Sciences

The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory(RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene(parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration(FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages(3.25 V for set voltage and-0.55 V for reset voltage), low static power consumption, high storage window and good retention properties(>104s).A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.

关键词： wearable device image sensor flexible biocompatible resistive random-access memory(RRAM) photoresistor

Neuromorphic vision chips

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Science China(Information Sciences) 2018年第6期61卷 119-135页

作者： Nanjian WU State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Center for Excellence in Brain Science and Intelligence Technology Chinese Academy of Sciences University of Chinese Academy of Sciences

The paper reviews the progress of neuromorphic vision chip research in decades. It focuses on two kinds of the neuromorphic vision chips: frame-driven(FD) and event-driven(ED) vision chips. The FD and ED vision chips are very different from each other in system architecture, image sensing, image information coding, image processing algorithm, design methodology. The vision chips can overcome serial data transmission and processing bottlenecks in traditional image processing systems. They can perform the high speed image capture and real-time image processing operations. This paper selects two typical chips from the two kinds of vision chips, respectively, and introduces their architectures, image sensing schemes, image processing processors and system operation. The FD neuromorphic reconfigurable vision chip comprises a high speed image sensor, a processing element array and self-organizing map neural network. The FD vision chip has the advantages in image resolution, static object detection, time-multiplex image processing, and chip area. The ED neuromorphic vision chip system is based on address-event-representation image sensor and event-driven multi-kernel convolution network. The ED vision chip has the advantages in fast sensing, low communication bandwidth, brain-like processing, and high energy efficiency. Finally, this paper discusses the architecture and the challenges of the future neuromorphic vision chip and indicates that the reconfigurable vision chip with left-and right-brain functions integrated in the three dimensional(3 D) large-scale integrated circuit(LSI) technology becomes a trend of the research on the vision chip.

关键词： neuromorphic vison chip frame-driven address-event-representation(AER) event-driven convolution neural network image sensor image processing

Patterned growth ofβ-Ga_(2)O_(3) thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application

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Journal of Materials Science & Technology 2021年第13期72卷 189-196页

作者： Chao Xie Xingtong Lu Yi Liang Huahan Chen Li Wang Chunyan Wu Di Wu Wenhua Yang Linbao Luo School of Electronic Science and Applied Physics Hefei University of TechnologyHefei230009China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou450052China

Solar-blind deep-ultraviolet(DUV)photodetectors based on Ga_(2)O_(3)have attracted great attention due to their potential applications for many military and civil ***,the development of device integration for optoelectronic system applications remains a huge ***,we report a facile method for patterned-growth of high-qualityβ-Ga_(2)O_(3)thin films,which are assembled into a photodetectors array comprising 8×8 device units.A representative detector exhibits outstanding photoresponse performance,in terms of an ultra-low dark current of 0.62 pA,a large Ilight/Idark ratio exceeding 10^(4),a high responsivity of 0.72 A W^(-1) and a decent specific detectivity of 4.18×10^(11)Jones,upon 265 nm DUV *** is more,the DUV/visible(250/400 nm)rejection ratio is as high as 10^(3) with a sharp response cut-off wave length at 280 *** optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability,endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial *** results suggest that the proposed technique offers an effective avenue for patterned growth ofβ-Ga_(2)O_(3)thin films for multifunctional DUV optoelectronic applications.

关键词： Ultrawide-bandgap semiconductor Solar-blind Deep ultraviolet photodetection Patterned growth image sensor