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Coupling ideality of standing-wave supermode microresonators

Photonics Research 2024年第8期12卷 1610-1618页

作者： MIN WANG YUECHEN LEI ZHI-GANG HU CHENGHAO LAO YUANLEI WANG XIN ZHOU JINCHENG LI QI-FAN YANG BEI-BEI LI Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China School of Physics Beihang UniversityBeijing 100191China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China Songshan Lake Materials Laboratory Dongguan 523808China

Standing-wave supermode microresonators that are created through the strong coupling between counter-propagating modes have emerged as versatile platforms for sensing and nonlinear *** example,these microresonators have shown potential in nanoparticle sizing and counting,as well as enhancing the single-photon optomechanical coupling rate of stimulated Brillouin ***,it has been observed that the relation between the mode linewidth and on-resonance transmission of the split supermodes differs obviously from that of the non-split *** behavior is typically quantified by the coupling ideality(I),which remains inadequately explored for the standing-wave *** this study,we theoretically and experimentally investigate the coupling ideality of standing-wave supermodes in a commonly employed configuration involving a Si O2microresonator side-coupled to a tapered *** findings demonstrate that,even with a single-mode tapered fiber,the coupling ideality of the standing-wave supermodes is limited to 0.5,due to the strong backscattering-induced energy loss into the counter-propagating direction,resulting in an additional equivalent parasitic *** achieving a coupling ideality of 0.5 presents challenges for reaching over-coupled regimes,it offers a convenient approach for adjusting the total linewidth of the modes while maintaining critically-coupled conditions.

关键词： ideality mode wave

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SPECIAL ISSUE： IMPORTANT ISSUES IN MARXIST PHILOSOPHICAL STUDIES IN CONTEMPORARY CHINA：The essential tension： on the distinction of ideality and actuality in Marxist philosophy

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Social Sciences in China 2008年第2期29卷 162-171页

作者： Wang Nanshi Department of Philosophy Nankai University

There are two opposing tendencies in the history of Westem philosophy： one is the Platonic- Hegelian tradition that mixes actuality and ideality, the other is the Aristotelian-Kantian tradition that differentiates the two. Marx distanced himself from the former by his critiques of Hegelism, but the later generations have in a sense turned back to it in their interpretation of Marxist theory. Despite its significance, this reversal is fundamentally inconsistent with Marxist philosophy, and will frequently have unfortunate results in practice. Therefore it is of great necessity to clarify the theoretical distinction between Marxism and Hegelism on this issue.

关键词： Marxist philosophy ideality actuality Hegelism

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Nanodevices engineering and spin transport properties of MnBi_(2)Te_(4) monolayer

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npj Computational Materials 2021年第1期7卷 414-421页

作者： Yipeng An Kun Wang Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing Wang Shuhong Ma Heyan Wang Ruqian Wu Wuming Liu School of Physics&Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials Henan Normal UniversityXinxiangChina Department of Physics and Astronomy Mississippi State UniversityStarkvilleMSUSA Department of Chemistry Mississippi State UniversityStarkvilleMSUSA Key Laboratory of Polar Materials and Devices(MOE)&Department of Optoelectronics East China Normal UniversityShanghaiChina Department of Physics and Astronomy University of CaliforniaIrvineCAUSA School of Physics Sun Yat-Sen UniversityGuangzhouChina School of Physics and Technology Suzhou University of Science and TechnologySuzhouJiangsuChina Hebi National Lighting Co.Ltd HebiChina Siyuan Laboratory Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy MaterialsDepartment of PhysicsJinan UniversityGuangzhouChina Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijingChina

Two-dimensional(2D)magnetic materials are essential for the development of the next-generation spintronic ***,layered van der Waals(vdW)compound MnBi2Te4(MBT)has attracted great interest,and its 2D structure has been reported to host coexisting magnetism and ***,we design several conceptual nanodevices based on MBT monolayer(MBT-ML)and reveal their spin-dependent transport properties by means of the first-principles *** pn-junction diodes and sub-3-nm pin-junction field-effect transistors(FETs)show a strong rectifying effect and a spin filtering effect,with an ideality factor n close to 1 even at a reasonably high *** addition,the pip-and nin-junction FETs give an interesting negative differential resistive(NDR)*** gate voltages can tune currents through these FETs in a large ***,the MBT-ML has a strong response to *** results uncover the multifunctional nature of MBT-ML,pave the road for its applications in diverse next-generation semiconductor spin electric devices.

关键词： temperature ideality transport

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Current Transport in Copper Schottky Contacts to a−Plane/ c−Plane n-Type MoSe_(2)

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Chinese Physics Letters 2011年第8期28卷 254-257页

作者： C.K.Sumesh K.D.Patel V.M.Pathak R.Srivastav Department of Physics Faculty of Technology and EngineeringCharotar University of Science and TechnologyCHANGA 388421GujaratIndia Department of Physics Sardar Patel UniversityVallabh Vidyanagar 388120GujatatIndia

We identically prepared Cu-nMoSe_(2)(a−plane)and Cu-nMoSe_(2)(c−plane)Schottky barrier diodes(SBDs)on the same n-type MoSe_(2) single *** effective Schottky barrier heights(SBHs)and ideality factors were obtained from the current−voltage-temperature(I–V–T)*** barrier height and ideality factor,estimated from the conventional thermionic emission model by assuming a Gaussian barrier distribution,are highly dependent on temperature.A notable deviation from the theoretical Richardson constant value is also observed in the conventional Richardson *** decrease in the experimental barrier heightΦB0 and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of barrier height inhomogeneities at the metal−semiconductor *** is proven that the presence of a distribution of barrier heights is responsible for the apparent decrease of the zero bias barrier *** voltage dependence of the standard deviation causes the increase of the ideality factor at low *** value of the Richardson constant obtained without considering the inhomogeneous barrier heights is much closer than the theoretical *** Cu-nMoSe_(2)(a−plane)Schottky diode shows better results in comparison with the nMoSe_(2)(c-plane)Schottky diode.

关键词： Schottky temperature ideality

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Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC

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Chinese Physics Letters 1997年第6期14卷 460-463页

作者： ZHANG Yong-gang LI Ai-zhen A.G.Milnes State Key Laboratory of functional Materials for Informatics Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050 Department of Electrical and Computer Engineering Carnegie Mellon UniversityPittsburghPA 15313U.S.A.

The Schottky contact characteristics of Cr on n-and p-type 6H-SiC have been investigated by using I-V and C-V methods,and the barrier heights and ideality factors have been *** obtained show that Cr is also an appropriate metal to form Schottky junction on n type 6H-SiC,as the barrier height of~1 eV is moderate for both low forward turn on voltage and low backward leakage current in device ***,the interfacial properties of Cr to p type 6H-SiC results in nonideal Schottky junctions.

关键词： Schottky ideality barrier

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Electrical characteristics of Pt-ZnO Schottky nano-contact

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Science China(Physics,Mechanics & Astronomy) 2010年第1期53卷 64-67页

作者： SHAO ZhengZheng , ZHANG XueAo, WANG XiaoFeng & CHANG ShengLi Center of Materials Science, College of Science, National University of Defense Technology, Changsha 410073, China National University of Defense Technology Center of Materials Science College of Science Changsha China (GRID:grid.412110.7) (ISNI:***)

The electrical characteristics of Pt-ZnO Schottky nano-contact have been studied. Well aligned ZnO nanorod arrays were synthesized by two-step wet-chemical method. A Pt-coated conducting probe of atomic force microscope was placed on the head face of the ZnO nanorod, thereby forming a Pt-ZnO nano-contact. The I-V characteristic curve shows that the Pt-ZnO nano-contact exhibits rectifying effect, like a Schottky diode with an ideality factor of 3.2 and a reverse-bias breakdown voltage more than -10 V. The study suggests that a high electric field is induced on the ZnO beneath the contact point when a bias voltage is applied, hence, the Schottky barrier thickness is decreased, and results in easier tunneling across the Pt-ZnO interface and a large ideality factor.

关键词： ZnO nanorod Schottky contact ideality factor

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Investigation of the Performance of CIS Photovoltaic Modules under Different Environmental Conditions

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Smart Grid and Renewable Energy 2011年第4期2卷 375-387页

作者： Kandil M. Kandil Majida S. Altouq Asma M. Al-asaad Latifa M. Alshamari Ibrahim M. Kadad Adel A. Ghoneim 不详

This work investigates the effects of temperature and radiation intensity on the parameters of a copper indium diselenide (CIS) photovoltaic module. The module performance parameters are determined from calculated module parameters. An outdoor experimental setup is installed to carryout a series of I-V curve measurements under different irradiance and temperature conditions for the module. A numerical model which considers the effect of series and shunt resistances is developed to evaluate the different parameters of PV modules. Orthogonal distance regression (ODR) algorithm is adapted for fitting I-V measurements and extracting module parameters from I-V measurements. The values of module parameters, series resistance Rs, shunt resistance Rsh, diode ideality factor n and reverse saturation current Io determined from I-V measurements at different irradiation intensity and temperature range are in good agreement with the corresponding parameters obtained from the developed numerical model. The module parameters extracted from I-V measurements are employed to calculate the module performance parameters, i.e. open circuit voltage Voc, fill factor FF and module efficiency η at different irradiation intensity and temperature range. Present results indicate that the largest drop in open circuit voltage Voc due to about 20℃ increase in temperature is approximately 8.8% which is not compensated for by the relatively small increase in short circuit current, (2.9% in Isc), resulting in a reduction in maximum power of about 6.3%. Results let us conclude that the shunt resistance RSh increases with radiation at low radiation values (2). As radiation increases at high radiation values (> 400 W/m2), RSh begins to decease sharply and dramatically. Also, as the light intensity incident on the solar module increases, the series resistance and the output voltage decrease. When the irradiance intensity increases, the series resistance decreases but with a very low rate at the two stud

关键词： PV Module Module Parameters Series Resistance Shunt Resistance ideality Factor

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Investigation of Polyaniline Thin Film and Schottky Junction with Aluminium for Electrical and Optical Characterization

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Materials Sciences and Applications 2011年第8期2卷 1022-1026页

作者： Pronob Jyoti Saikia Pratap Chandra Sarmah Department of Electronics North-East Institute of Science and Technology Jorhat Assam India

Polyaniline Powdered sample was chemically synthesized using aniline and doped with HCl. Ultra thin film and Schottky junction with Al metal have been fabricated from this powdered sample Ultrathin film of polyaniline shows amorphous nature of the film. Two activation energies of these films at two different temperatures regions within 25-120oC have been observed. Schottky Junction with Al meal shows that the diode ideality factor is much higher than unity. Barrier height of this Schottky junction is estimated to be around 0.61eV. C-V plot of the junction indicates that the carrier concentration is about 1015cm-3. There are various factors found to affect the junction to deviate from ideal Schottky behaviour.

关键词： Aniline Activation Energy Diode ideality Factor Barrier Height

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Evaluation and Validation of Equivalent Five-Parameter Model Performance for Photovoltaic Panels Using Only Reference Data

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Energy and Power Engineering 2014年第9期6卷 235-245页

作者： Nouar Aoun Rachid Chenni Boukheit Nahman Kada Bouchouicha Department of Physics Constantine 1 University Constantine Algeria Research Unit in Renewable Energies in the Saharan Medium URER/MS Development Centre of Renewable Energies Adrar Algeria MoDERNa Laboratory Constantine 1 University Constantine Algeria

This paper presents the modeling of electrical I-V verification of photovoltaic modules using five-parameter models based on the minimum usage of input data, which are usually provided by manufacturer’s datasheet. However, we vary them with a step of 10-4, the ideality factor between 0.0 and 4 for each iteration in order to choose the value, which gives a minimal relative error of the maximum power point. Moreover, when is known, the other four parameters (i.e., Rs, I0, Iph and Rsh) are known. Finally, the effectiveness of this approach is then validated through comparison of the experimental results data under outdoor weather conditions.

关键词： Photovoltaic Five-Parameters Mono-Crystalline Relative Error ideality Factor

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“起源”的迷思—德里达《<几何学起源>导论》解读

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外国哲学 2003年第7期 27-31页

作者：单斌

德里达的思想道路是由对胡塞尔现象学的跟进开始的，本文试图从德里达早期的《导论》一书来看他如何从胡塞尔现象学本身返问出胡塞尔思想隐藏的矛盾，由此激发出德里达的“延异”思想。

关键词：观念化起源历史性延异 ideality origin historicity differance

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