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Carrier-driven magnetic and topological phase transitions in twodimensional iii-v semiconductors

Nano Research 2023年第2期16卷 3443-3450页

作者： Yan Li Xinru Ma Hongwei Bao Jian Zhou Fei Ma Jingbo Li State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong UniversityXi’an 710049China Center for Alloy Innovation and Design Xi’an Jiaotong UniversityXi’an 710049China Institute of semiconductors South China Normal UniversityGuangzhou 510631China

iii-v semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated *** these applications for conventional bulk structures,their fundamental physical properties in the nanoscale limit are still in scarcity,which is of great importance for the development of *** this work,we demonstrate that the iii-v semiconductor MX(M=Al,Ga,In;X=P,As,Sb)in its two-dimensional(2D)limit could exhibit double layer honeycomb(DLHC)configuration and distorted tetrahedral coordination,according to our first-principles calculations with HSE06 hybrid *** is found that surface reconstruction endows 2D iii-v DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer ***-hat-shape bands emerge at the top valence bands of pristine AlP,GaP,InP,AlAs,and InAs DLHCs,inducing the density of states showing a sharp van Hove singularity near the Fermi *** a result,these DLHCs exhibit itinerant magnetism upon moderate hole doping,while the rest GaAs,AlSb,GaSb,and InSb DLHCs become magnetic under tensile strain with hole *** an exchange splitting of the localized pz states at the top valence bands,the hole-doped iii-v DLHCs become half-metals with 100%***,the InSb DLHC shows inverted band structure near the Fermi level,bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital *** iii-v DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.

关键词： iii-v semiconductors HSE06 hybrid functional Mexican-hat-shape bands magnetism topological bands

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Ultrasensitive Indium Phosphide Nanomembrane Wearable Gas Sensors

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Energy & Environmental Materials 2024年第6期7卷 209-217页

作者： Shiyu Wei Tuomas Haggren Zhe Li Hark Hoe Tan Chennupati Jagadish Antonio Tricoli Lan Fu Department of Electronic Materials Engineering Australian Research Council Centre of Excellence for Transformative Meta-Optical SystemsResearch School of PhysicsThe Australian National UniversityCanberraACT 2600Australia Nanotechnology Research Laboratory Research School of ChemistryCollege of ScienceThe Australian National UniversityCanberraACT 2600Australia Nanotechnology Research Laboratory Faculty of EngineeringThe University of SydneyCamperdownNSW 2006Australia

Air quality is deteriorating due to continuing urbanization and *** particular,nitrogen dioxide(NO_(2))is a biologically and environmentally hazardous byproduct from fuel combustion that is ubiquitous in urban *** address this issue,we report a high-performance flexible indium phosphide nanomembrane NO_(2)sensor for real-time air quality *** ultralow limit of detection of~200 ppt and a fast response have been achieved with this device by optimizing the film thickness and doping concentration during indium phosphide *** varying the film thickness,a dynamic range of values for NO_(2)detection from parts per trillion(ppt)to parts per million(ppm)level have also been demonstrated under low bias voltage and at room temperature without additional light *** measurements show an adequately stable response after repeated ***-site testing of the sensor in a residential kitchen shows that NO_(2)concentration from the gas stove emission could exceed the NO_(2)Time Weighted Average limit,i.e.,200 ppb,highlighting the significance of real-time ***,the indium phosphide nanomembrane sensor element cost is estimated atvariety of air quality monitoring applications.

关键词： air quality monitoring flexible iii-v semiconductors nanofilm ultrathin

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High Power 170 GHz Frequency Doubler Based on Ga As Schottky Diodes

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Chinese Journal of Electronics 2022年第3期31卷 547-554页

作者： TIAN Yaoling HE Yue HUANG Kun JIANG Jun LIN Changxing ZHANG Jian Microsystem and Terahertz Research Center China Academy of Engineering Physics Institute of Electronic Engineering China Academy of Engineering Physics School of Electronic Science and Engineering University of Electronic Science and Technology of China

The research on high power 170 GHz frequency doubler based on the Ga As Schottky diodes is proposed in this paper. This basic doubler cell is developed with a 50-μm-thick, 600-μm-wide, and 2-mm-long Al N substrate with high thermal conductivity to reduce the thermal effect. Besides, power combined frequency doubler has been fabricated to improve the power capacity by a factor of two. Great agreement has been achieved between the simulated results based on electrothermal model and measured performances. At room temperature, the 3 d B bandwidth of the single doubler based on Ga As Schottky diodes is 11.8% over the frequency range from 160 to 180 GHz with pumping power of 150 to330 m W. And the peak efficiency of the doubler is measured to be 33.1%, while the maximum output power is101.7 m W at 174.08 GHz. As for power combined circuit,the best efficiency is 30.1% with a related output power of204.6 m W. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

关键词： basic doubler cell gallium arsenide electro-thermal model high power multipliers power combined circuit high thermal conductivity power capacity wide band gap semiconductors iii-v semiconductors millimetre wave frequency convertors aluminium compounds Schottky diodes power combined frequency doubler pumping power thermal effect frequency multipliers high power frequency doubler thermal conductivity

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A Miniaturized Bandwidth Reconfigurable Bandpass Chip Filter with Semi-lumped Topology and GaAs pHEMT Technology

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Chinese Journal of Electronics 2021年第1期30卷 192-198页

作者： LI Linqing ZHU Haoran NING Xingyu LI Zunwen WU Xianliang Key Lab of Intelligent Computing and Signal Processing Ministry of Education Anhui University

A miniaturized reconfigurable bandpass chip filter with semi-lumped topology and Gallium Arsenide pseudomorphic High electron mobility transistor（GaAs pHEMT） technology is proposed. Semi-lumped topology is employed to instead the traditional lumped inductor with microstrip transmission line, which can reduced the size of the tunable filter significantly. Three-order series and shunt resonated bandpass filter is implemented with shorted stubs and metal-insulator-metal capacitors. Two transmission zeros are introduced with the series resonator and the shunted GaAs FET. By tuning the gate bias circuit of the FET, the capacitance of the series resonator is changed and the bandwidth of the filter is adjusted correspondingly. An equivalent circuit model is developed to interpret the mechanism of the proposed filter circuit. A reconfigurable on chip filter sample operated at 10 GHz is fabricated to validate the design. Two fractional bandwidth of 14.3% and 23.5% are tuned with bias voltage of the FET, while insertion loss of 2.4 d B and 2.2 d B are observed with the filter, respectively. The area of the chip filter is 0.86 × 0.96 mm2and is equivalent to an electrical length of 0.08 × 0.09λg2at center frequency. Measurement results agree well with the simulation ones.

关键词： gallium arsenide tunable filter transmission zeros equivalent circuit model resonator filters shunted FET iii-v semiconductors miniaturized bandwidth reconfigurable bandpass chip filter MIM devices microstrip transmission line chip filter sample shunt resonated bandpass filter metal-insulator-metal capacitors semilumped topology loss 2.4 dB Gallium Arsenide pseudomorphic High electron mobility transistor technology insertion loss filter circuit integrated circuit design GaAs integrated circuit manufacture frequency 10.0 GHz pHEMT technology microwave filters loss 2.2 dB HEMT integrated circuits series resonator miniaturized reconfigurable bandpass chip filter band-pass filters

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N vacancy, substitutional O, and Al defects in the bandgap of composition-tunable nonstoichiometric AlN powder

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Chinese Physics B 2014年第6期23卷 554-562页

作者：张电刘发民蔡鲁刚 Department of Physics School of Physics and Nuclear Energy Engineering Beihang University

AlN powders are prepared by direct nitridation via Al liquid and vapor phases in mixed atmospheres of N2 and NH3 with different NH3/N2 ratios. The reaction analysis reveals that NH3 acts as catalyst for N2 dissociation and the transportations of N, O, and Al in the liquid phase are different from those in the vapor phase. Accordingly, the products are Al-rich and composition-tunable nonstoichiometric AlN in which N, O, and Al content values change with nitridation atmosphere and temperature, leading to the variation of the relevant defect concentration. Therefore, the AlN powders exhibit prominent absorption bands around 5.30, 3.40, and 1.50 ev, which are tentatively assigned to vN, ON donors, and AlN acceptor respectively. Furthermore, a new donor named [vN-ON] complex is predicted at 4.40 ev within the 5.90 ev bandgap. It is demonstrated that the optical spectra of nonstoichiometric AlN are preferable to the nominal stoichimometric one for the identification of the defects energy level.

关键词： iii-v semiconductors defects optical properties luminescence

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Design and Analysis of a 0.01-to-6GHz 31dBm-P1dB 31.5%-PAE Distributed Power Amplifier in 0.25-μm GaAs Technology

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Chinese Journal of Electronics 2021年第3期30卷 549-555页

作者： MENG Fanyi LIU Cha HU Jianquan MOU Shouxian MA Kaixue School of Microelectronics Tianjin University School of Physics University of Electronic Science and Technology of China Smarter Micro Company

This paper presents the design and analysis of a distributed power amplifier with 6-d B bandwidth from 10 MHz to 6 GHz. To meet the stringent targeted specification, the concurrent design and analysis are carefully performed with optimizations in both passive and active devices. The gate capacitive division technique is proposed and proven theoretically of bandwidth extension effect and power efficiency enhancement. To validate the theory, a prototype is designed in a 0.25-μm Ga As technology. The fabricated amplifier chip is packaged in an evaluation cavity of SMA connectors. The measurement shows an average power gain of 15 d B, OP1 d Band PSAT of 31 d Bm and 32.6 d Bm at 3 GHz, and PAE at OP1 d Band PSAT points are 31.5% and 43.7% respectively. To the best of authors’ knowledge, the amplifier achieves the highest Power-added efficiency(PAE) among the similar Ga As amplifiers.

关键词： gallium arsenide iii-v semiconductors gate capacitive division technique evaluation cavity microwave amplifiers bandwidth extension effect fabricated amplifier chip power efficiency enhancement network synthesis distributed amplifiers frequency 10.0 MHz to 6.0 GHz efficiency 31.5 percent active devices network analysis average power gain passive devices SMA connectors electric connectors circuit optimisation distributed power amplifier UHF power amplifiers GaAs GaAs technology power-added efficiency GaAs amplifiers size 0.25 mum concurrent design

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Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength

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Chinese Physics Letters 2018年第7期35卷 126-129页

作者：杜奔顾溢张永刚陈星佑马英杰师艳辉张见 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 University of Chinese Academy of Sciences Beijing 100049

We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.

关键词： iii-v semiconductors

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Ultra-thin Body Buried In0.35Ga0.65As Channel MOSFETs with Extremely Low Off-current on Si Substrates

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Chinese Journal of Electronics 2021年第6期30卷 1017-1021页

作者： WANG Bo DING Peng FENG Ruize WANG Yanfu LIU Xiaoyu SUN Tangyou CHEN Yonghe LIU Xingpeng LI Qi LI Yue LIU Yingbo YIN Yihui ZHAO Hao ZHANG Wei LI Haiou JIN Zhi Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology High-Frequency High-voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of Sciences The 34th Research Institute of China Electronics Technology Group Corporation State Key Laboratory of ASIC & System Fudan University

In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/AlO/In P under different annealing conditions. A minimum interface trap density of 3×10cmevis obtained without postmetallization annealing ***, utilizing Ti/AlO/In P MOS gate stack,we fabricated ultra-thin body buried In0.35 Ga0.65 As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200 nm gate length device with extremely low off-current of 0.6 n A/μm, and on-off ratio of 3.3×10, is demonstrated by employing buried low indium(InGaAs) channel with In P barrier/spacer device structure, giving strong potential for future highperformance and low-power applications.

关键词： silicon gallium arsenide Si substrates size 200.0 nm minimum interface trap density iii-v semiconductors As extremely low off-current postmetallization annealing treatment Si Ga In ultra-thin body optimized on-off trade-off MOSFET metal-oxide-semiconductor gate stack InP barrier-spacer device structure annealing elemental semiconductors O aluminium compounds different annealing conditions ultra-thin body buried channel MOSFET Ti-Al indium compounds interface states gate length device -InP

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Effect of Ar+,He+,and S+ Irradiation on n-InP Single Crystal

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Chinese Journal of Chemical Physics 2014年第1期27卷 82-86页

作者： Jing-yu Hu Waqas Mahmood Qing Zhao Beijing Institute of Technology School of Physics

The irradiation effects of Ar+,He+and S+with energy from 10 ev to 180 ev on n-InP(l00)surface are analyzed by X-ray photoelectron spectroscopy and low energy electron *** irradiation on the n-InP surface,damage on the surface,displacement of the Fermi level and formation of sulfur species on S+exposed surface are found and *** annealing is done to suppress the surface states introduced by S+***,it is unsuccessful in removing the damage caused by noble ***,S+ions can efficiently repair the Ar+damaged surface,and finally form a fine 2x2 InP surface.

关键词： Electron radiation effects X-ray effects Fermi levels iii-v semiconductors Low energy electron diffraction

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Preparation of p—n Junction Diode by B—Doped Diamond Film Grown on Si—Doped c—BN

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Chinese Physics Letters 2002年第10期19卷 1513-1515页

作者：王成新高春晓等 StateKeyLaboratoryforSuperhardMaterials JilinUniversityChangchun130023 Towhomcorrespondenceshouldbeaddressed

A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The current-voltage characteristics of the heterojunction diode were measured and the result indicated that the rectification ratio reached 10^5, and the turn-on voltage and the highest current were 7 v and 0.35 mA, respectively

关键词： iii-v semiconductors

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