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Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE

Effects of substrate temperature upon the properties of ZnMg...

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第18届国际真空大会

作者： K. Saito Y. Inoue Y. Hayashida T. Tanaka M. Nishio Synchrotron Light Application Center Saga University Department of Electrical and Electronic Engineering Faculty of Science and EngineeringSaga University

Zn1-xMgxTe ternary alloy is a candidate for an optically active layer in green-to-blue range of spectrum and a cladding layer for improving a performance of ZnTe-based pure-green light-emitting-diodes and for realizing ZnTe-based laser diodes. Unfortunately, there are only a few works on Zn1-xMgxTe epitaxial layer grown by metalorganic vapor phase epitaxy （MOVPE）, which is a potential epitaxial growth technique for mass production. In our previous studies, nominally undoped Zn1-xMgxTe epitaxial layers have been successfully grown on （100） ZnTe substrates by MOVPE using dimethylzinc （DMZn）, bis-methylcyclopentadienyl-magnesium （（MeCp）2Mg） and diethyltelluride （DETe）. It has been found that the Mg composition in the layer drastically increases with decreasing DETe transport rate or with increasing the total carrier gas flow rate. In addition, we have reported on the relationship between the optical quality of the grown layers and the transport rate ratio of group vi source to group ii ones. On the other hand, the substrate temperature is also one of the important parameter of growth condition. However, there is no report on the influence on the growth of Zn1-xMgxTe layer. In this work, we studied the effects of substrate temperature upon the optical properties, Mg composition, and surface morphology of undoped Zn1-xMgxTe layers grown by MOVPE. The growth of undoped Zn1-xMgxTe layers was performed on （100） ZnTe substrates using a vertical-type atmospheric pressure MOVPE system in almost the same manner as employed in the previous studies. The transport rates of DMZn, （MeCp）2Mg, and DETe were fixed at 15, 2, and 10μmol/min, respectively. The total flow rate of hydrogen carrier gas was 800 sccm. The substrate temperature （Tsub） was varied from 340 to 420 °C. The Mg composition （x） and the surface morphology were investigated by energy dispersion X-ray （EDX） analysis and atomic force microscopy, respectively. Photoluminescence （PL） measurement was performed at 4.2 K. The

关键词： ZnMgTe ii-vi semiconductor MOVPE substrate temperature

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