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Field-Line-Circuit Coupling Based Method for Predicting Radiated Electromagnetic Emission of igbt-PMSM Drive System

Chinese Journal of Electronics 2021年第3期30卷 561-569页

作者： XIAO Pei HE Jiagang PENG Zishun LI Jiawei QIU Yongfeng LIU Zhu LI Gaosheng College of Electrical and Information Engineering Hunan University School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China

Electric drive system with Insulated gate bipolar transistor(igbt) power device is widely used in Electric vehicle(EV), which consists of inverter, cables and Permanent magnet synchronous motor(PMSM). Due to the fast switching in di/dt and dv/dt of igbt device,the system produces serious radiated Electromagnetic interference(EMI) through the interconnection ***, modeling of EMI source, propagation path and load PMSM is the key to accurately evaluate the system's radiation level. In addition, the system's radiated EMI involves the integrated calculation of circuit, cable and electromagnetic field, which cannot be solved by using a single circuit or electromagnetic calculation method. Therefore, this paper develops an effective fieldlinecircuit coupling based method to investigate the radiated EMI problems for igbt-PMSM drive system,which is validated by experimental measurement. Besides,the impact of power cable parameters on radiated EMI is discussed. The proposed approach has guiding significance for electromagnetic compatibility design of EV.

关键词： field-line-circuit coupling electromagnetic calculation method power cable parameters permanent magnet motors electromagnetic interference electromagnetic field electromagnetic compatibility design Electric vehicle electromagnetic compatibility radiated EMI problems Permanent magnet synchronous motor predicting radiated Electromagnetic emission igbt-PMSM drive system interconnection cables load PMSM effective field-linecircuit coupling power cables synchronous motors EMI source synchronous motor drives machine control Insulated gate bipolar transistor power device electric drives electromagnetic fields Electric drive system insulated gate bipolar transistors serious radiated Electromagnetic interference igbt device

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An insulated-gate bipolar transistor model based on the finite-volume charge method

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Chinese Physics B 2022年第12期31卷 651-660页

作者： Manhong Zhang Wanchen Wu School of Electrical and Electronic Engineering North China Electric Power UniversityBeijing 102206China

A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor(igbt)devices using SPICE simulators by extending the lumped-charge *** new method assumes local quasi-neutrality in the undepleted N^(-)base region and uses the total collector current,the nodal hole density and voltage as the basic *** SPICE implementation,it makes clear and accurate definitions of three kinds of nodes—the carrier density nodes,the voltage nodes and the current generator nodes—in the undepleted N^(-)base *** uses central finite difference to approximate electron and hole current generators and sets up the current continuity equation in a control volume for every carrier density node in the undepleted N^(-)base *** is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient *** use this method to simulate igbt devices in SPICE simulators and get a good agreement with technology computer-aided design simulations.

关键词： finite-volume charge method igbt device lumped charge method SPICE simulation TCAD simulation

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