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Field plated 0.15μm GaN HEMTs for millimeter-wave application

Journal of Semiconductors 2013年第6期34卷 49-53页

作者：任春江李忠辉余旭明王泉慧王雯陈堂胜张斌 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electron Devices Institute

SiN dielectrically-defined 0.15μm field plated GaN HEMTs for millimeter-wave application have been presented.The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition.Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate.Gate recessing was performed to control the threshold voltage of the devices.The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz.Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%,respectively,for a 0.15 mm gate width device operated at a 24 V drain bias.The developed 0.15μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development.

关键词： AlGaN/GaN HEMT Ohmic contact icp etching field plate millimeter-wave application

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Rapid subsurface damage detection of SiC using inductivity coupled plasma

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International Journal of Extreme Manufacturing 2021年第3期3卷 104-114页

作者： Yi Zhang Linfeng Zhang Keyu Chen Dianzi Liu Dong Lu Hui Deng Department of Mechanical and Energy Engineering Southern University of Science and TechnologyNo.1088Xueyuan RoadShenzhenGuangdong 518055People’s Republic of China School of Engineering Faculty of ScienceUniversity of East AngliaNorwich Research ParkNorwich NR47TJUnited Kingdom

This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this method does not introduce any new SSD to the substrate.Plasma diagnosis and simulation are used to optimize the detection operation.Assisted by an Si C cover,a taper can be etched on the substrate with a high material removal rate.Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results,and scanning transmission electron microscope(STEM)is adopted to confirm the accuracy of this method.The STEM result also indicates that etching does not introduce any SSD,and the thoroughly etched surface is a perfectly single crystal.A rapid SSD screening ability is also demonstrated,showing that this method is a promising approach for the rapid detection of SSD.

关键词： silicon carbide subsurface damage SSD detection icp etching

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