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Statistically modeling i-v characteristics of CNT-FET with LASSO

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Journal of Semiconductors 2017年第8期38卷 28-31页

作者： Dongsheng Ma Zuochang Ye Yan Wang institute of Microelectronics Tsinghua University

With the advent ofinternet of things （lOT）, the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physi- cal models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physi- cal models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. in this paper, one classical statistical regression method, LASSO, is used to model the i-v characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.

关键词： statistical learning compact model CNT-FET i-v characteristics LASSO machine learning

The influences of model parameters on the characteristics of memristors

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Chinese Physics B 2012年第4期21卷 576-585页

作者：周静黄达 National Laboratory for Parallel and Distributed Processing School of ComputerNational University of Defense TechnologyChangsha 410073China

As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. in this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

关键词： memristor i-v characteristics simulation program with integrated circuit emphasis

F4-TCNQ concentration dependence of the current voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si(MPS) Schottky barrier diode

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Chinese Physics B 2014年第11期23卷 512-522页

作者： E.Yaglioglu O.Tzn Ozmen Department of Physics Faculty of Arts and Sciences Dzce University

in this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-v） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

关键词： P3HT:PCBM:F4-TCNQ interfacial organic layer F4-TCNQ doping concentration Schottky bar-rier diodes i-v characteristics

characteristics and Thermal Efficiency of a Non-transferred DC Plasma Spraying Torch Under Low Pressure

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Plasma Science and Technology 2008年第6期10卷 701-705页

作者：鲍世聪郭文康叶民友须平张晓东 institute of Plasma Physics Chinese Academy of SciencesHefei 230031China School of Material Science and EngineeringWuhan Institute of TechnologyWuhan 430073China institute of Modern Physics Fudan UniversityShanghai 210011China institute of Plasma Physics Chinese Academy of SciencesHefei 230031China

Current-voltage （i-v） characteristics of a non-transferred DC arc plasma spray torch operated in argon at vacuum are reported. The arc voltage is of negative characteristics for a current below 200 A, fiat for a current between 200 A to 250 A and positive for a current beyond 250 A. The voltage increases slowly with the increase in carrier gas of arc. The rate of change in voltage with currents is about 3-4 v/100 A at a gas flow rate of about 1-1.5 v/10 standard liter per minute （slpm）. The i-v characteristics of the DC plasma torch are of a shape of hyperbola. Arc power increases with the argon flow rate. and the thermal efficiency of the torch acts in a similar way. The thermal efficiency of the non-transferred DC plasmatron is about 65-78%.

关键词： i-v characteristics thermal efficiency DC plasmatron vacuum

Current–voltage characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field

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Chinese Physics B 2015年第6期24卷 425-428页

作者：马杰闻光东苏宝根杨亦文任其龙 Key Laboratory of Biomass Chemical Engineering of Ministry of Education College of Chemical and Biological EngineeringZhejiang University

Current-voltage （l-v） characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field under atmospheric pressure are reported. Three anodes with different diameters are adopted in a 50-kW torch： 25 mm, 30 mm, and 35 nun, respectively. Two different diameters of anodes, that is, 100 mm and 130 mm, are adopted in a 1-MW plasma torch. The arc voltage shows a negative trend with the increase of arc current under the operating regimes. On the contrary, arc voltage shows a positive trend as the flow rate of carder gas increases, and a similar trend is found with increasing the external magnetic flux density. A similarity formula is constructed to correlate the experimental data of the torches mentioned above. Linear fitting shows that the Pearson correlation coefficient is 0.9958.

关键词： magnetically rotating hydrogen plasma i-v characteristics similarity theory

Current-voltage characteristics of voltage-biased Tl_2Ba_2CaCu_2O_8 intrinsic Josephson junctions

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Science China(Physics,Mechanics & Astronomy) 2014年第12期57卷 2242-2245页

作者： WANG Pei XiE Wei HU Lei LiU Xin Ji Lu HE Ming ZHANG Xu ZHAO XinJie YAN ShaoLin Department of Electronics Nankai University

The voltage-biased current-voltage （i-v） characteristics of intrinsic Josephson junctions （iJJs）, which are fabricated with misa- ligned high temperature superconducting Tl2Ba2CaCu2O8 （T1-2212） thin film, are investigated experimentally. Three charac- teristic regions in the i-v curve are observed at 47 K. in the low voltage part, the current firstly increases and then decreases slowly with increasing the biased voltage, which is shown as a bump. in the next region, the current slightly increases with in- creasing the biased voltage until a sudden decrease of the current appears. Thereafter, branch structure forms with increasing the voltage on the i-v characteristic. The influence of the self-heating on the i-v characteristics is investigated and the temper- ature dependence of the i-v characteristics is measured to explore these characteristics in detail.

关键词： intrinsic Josephson junctions voltage-biased i-v characteristics

A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

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Chinese Physics B 2014年第5期23卷 563-567页

作者： A.Tataroglu A.A.Hendi R.H.Alorainy F.Yakuphanoglu Department of Physics Faculty of ScienceGazi University Physics Department Sciences Faculty for GirlsKing Abdulaziz University Department of Physics Faculty of ScienceF?rat University

A novel aluminum iron oxide （Al/AlFe2O4/p-Si） Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite （AlFe2O4） was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias i-v characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor （n） and barrier height （ФB0） of the photodiode. The values of n and ФB0 for all conditions are found to be about 7.00 and 0.76 ev, respectively. in addition, the values of series resistance （Rs） are determined using Cheung＇s method and Ohm＇s law. The values of Rs and shunt resistance （Rsh） are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future.

关键词： spinel ferrite Schottky photodiode i-v characteristics barrier height

The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites

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Chinese Physics B 2009年第6期18卷 2610-2614页

作者：王彩凤李清山胡波李卫兵 Department of Physics and Electronic Science Binzhou University Physics Department Ludong University Flying College Binzhou University

ZnS films were prepared by pulsed laser deposition （PLD） on porous silicon （PS） substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction （XRD）, scanning electron microscope （SEM）, photoluminescence （PL） and i-v characteristics. it is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS （111） direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The i-v characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

关键词： photoluminescence i-v characteristics annealing

Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays

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Chinese Physics B 2014年第10期23卷 469-471页

作者： Saeideh Ramezani Sani Department of Physics Roudehen Branch Islamic Azad University

The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The i-v characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （Uv） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under Uv illumination. it is observed that Uv photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-v reverse bias.

关键词： TiO2 nanowires photoresponse i-v characteristics heterojunction